Devendra Sadana
Title
Cited by
Cited by
Year
Fin FET devices from bulk semiconductor and method for forming
DM Fried, EJ Nowak, BA Rainey, DK Sadana
US Patent 6,642,090, 2003
3562003
SOI CMOS structure
W Chen, DK Sadana, Y Taur
US Patent 5,767,549, 1998
2891998
Method of preventing surface roughening during hydrogen prebake of SiGe substrates
H Chen, DM Mocuta, RJ Murphy, SW Bedell, DK Sadana
US Patent 6,958,286, 2005
2692005
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ...
Nature communications 5 (1), 1-7, 2014
2482014
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics
CW Cheng, KT Shiu, N Li, SJ Han, L Shi, DK Sadana
Nature communications 4 (1), 1-7, 2013
2092013
Spalling methods to form multi-junction photovoltaic structure
SW Bedell, DK Sadana, D Shahrjerdi
US Patent 8,927,318, 2015
1982015
Efficient and bright organic light-emitting diodes on single-layer graphene electrodes
N Li, S Oida, GS Tulevski, SJ Han, JB Hannon, DK Sadana, TC Chen
Nature communications 4 (1), 1-7, 2013
1982013
Silicon-on-insulator vertical array device trench capacitor DRAM
CJ Radens, GB Bronner, T Chen, B Davari, JA Mandelman, D Moy, ...
US Patent 6,566,177, 2003
1902003
Patterned SOI regions in semiconductor chips
B Davari, DK Sadana, GG Shahidi, S Tiwari
US Patent 6,333,532, 2001
1832001
Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
B Hekmatshoar-Tabari, M Hopstaken, D Park, DK Sadana, GG Shahidi, ...
US Patent 8,778,448, 2014
1782014
Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
B Hekmatshoar-Tabari, M Hopstaken, D Park, DK Sadana, GG Shahidi, ...
US Patent 9,099,585, 2015
1772015
Layer-resolved graphene transfer via engineered strain layers
J Kim, H Park, JB Hannon, SW Bedell, K Fogel, DK Sadana, ...
Science 342 (6160), 833-836, 2013
1732013
SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device
BB Doris, D Chidambarrao, X Baie, JA Mandelman, DK Sadana, ...
US Patent 6,717,216, 2004
1662004
Heterojunction III-V photovoltaic cell fabrication
SW Bedell, NS Cortes, KE Fogel, D Sadana, G Shahidi, D Shahrjerdi
US Patent 8,802,477, 2014
1642014
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, J Kuss, D Shahrjerdi, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1572009
Process of making densely patterned silicon-on-insulator (SOI) region on a wafer
E Leobandung, DK Sadana, DJ Schepis, GG Shahidi
US Patent 6,214,694, 2001
1532001
Kerf-less removal of Si, Ge, and III–V layers by controlled spalling to enable low-cost PV technologies
SW Bedell, D Shahrjerdi, B Hekmatshoar, K Fogel, PA Lauro, JA Ott, ...
IEEE Journal of Photovoltaics 2 (2), 141-147, 2012
1492012
Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing
AE Morgan, EK Broadbent, KN Ritz, DK Sadana, BJ Burrow
Journal of applied physics 64 (1), 344-353, 1988
1471988
Techniques for Layer Transfer Processing
S Bedell, K Fogel, B Furman, S Purushothaman, D Sadana, A Topol
US Patent App. 11/840,389, 2007
1392007
Double SOI device with recess etch and epitaxy
F Assaderaghi, T Chen, KP Muller, EJ Nowak, DK Sadana, GG Shahidi
US Patent 6,432,754, 2002
1352002
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Articles 1–20