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Rajveer Fandan
Rajveer Fandan
Afiliación desconocida
Dirección de correo verificada de upm.es
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Acoustically-driven surface and hyperbolic plasmon-phonon polaritons in graphene/h-BN heterostructures on piezoelectric substrates
R Fandan, J Pedrós, J Schiefele, A Boscá, J Martínez, F Calle
Journal of Physics D: Applied Physics 51 (20), 204004, 2018
332018
Reducing sheet resistance of self-assembled transparent graphene films by defect patching and doping with UV/ozone treatment
T Tomašević-Ilić, Đ Jovanović, I Popov, R Fandan, J Pedrós, ...
Applied Surface Science 458, 446-453, 2018
322018
Dislocation density and strain-relaxation in Ge1− xSnx layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy
KR Khiangte, JS Rathore, V Sharma, S Bhunia, S Das, RS Fandan, ...
Journal of Crystal Growth 470, 135-142, 2017
212017
Advanced graphene-based transparent conductive electrodes for photovoltaic applications
S Fernández, A Boscá, J Pedrós, A Inés, M Fernández, I Arnedo, ...
Micromachines 10 (6), 402, 2019
202019
Dynamic local strain in graphene generated by surface acoustic waves
R Fandan, J Pedrós, A Hernández-Mínguez, F Iikawa, PV Santos, ...
Nano letters 20 (1), 402-409, 2019
172019
Exciton–plasmon coupling in 2D semiconductors accessed by surface acoustic waves
R Fandan, J Pedrós, F Calle
ACS Photonics 8 (6), 1698-1704, 2021
132021
Self-assembled Sn nanocrystals as the floating gate of nonvolatile flash memory
JS Rathore, R Fandan, S Srivastava, KR Khiangte, S Das, U Ganguly, ...
ACS Applied Electronic Materials 1 (9), 1852-1858, 2019
102019
Effect of quasiparticle excitations and exchange-correlation in Coulomb drag in graphene
R Fandan, J Pedrós, F Guinea, A Boscá, F Calle
Communications Physics 2 (1), 158, 2019
62019
On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy
S Das, KR Khiangte, RS Fandan, JS Rathore, RS Pokharia, S Mahapatra, ...
Current Applied Physics 17 (3), 327-332, 2017
62017
Impact of 2D-graphene on SiN passivated AlGaN/GaN MIS-HEMTs under mist exposure
MF Romero, A Boscá, J Pedrós, J Martínez, R Fandan, T Palacios, F Calle
IEEE Electron Device Letters 38 (10), 1441-1444, 2017
42017
Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si (111) substrates by plasma assisted molecular beam …
R Sarkar, R Fandan, KR Khiangte, S Chouksey, AM Josheph, S Das, ...
arXiv preprint arXiv:1603.08603, 2016
22016
Surface-acoustic-wave-driven graphene plasmonic sensor for fingerprinting ultrathin biolayers down to the monolayer limit
R Izquierdo-López, R Fandan, A Boscá, F Calle, J Pedrós
Biosensors and Bioelectronics 237, 115498, 2023
12023
METHOD OF FABRICATING NON-VOLATILE MEMORY DEVICE
SD Apurba Laha, Suddhasatta Mahapatra Address, Rajveer Singh Fandan, Krista ...
IN Patent 502,049, 2024
2024
Parameter Space for Chemical Vapor Deposition Graphene in Cold-Wall Reactors under High Precursor Flow Rate
A Boscá, A Ladrón-de-Guevara, J Pedros, J Martínez, R Fandan, F Calle
Crystal Growth & Design 23 (9), 6349-6358, 2023
2023
Quasiparticles in graphene and other 2D materials: modulation by a Surface acoustic wave and contribution to Coulomb drag
RS Fandan
Telecomunicacion, 2020
2020
Parameter space for graphene chemical vapour deposition in cold-wall reactors under high precursor flux
A Boscá, A Ladrón-de-Guevara, J Pedrós, J Martınez, R Fandan, F Calle
Light matter interaction graphene/h-BN and graphene/h-BN/graphene heterostructures mediated by surface acoustic waves
R Fandan
Supporting Information: Dynamic local strain in graphene generated by surface acoustic waves
R Fandan, J Pedrós, A Hernández-Mínguez, F Iikawa, PV Santos, ...
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