| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 371 | 2020 |
| Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD I Bryan, Z Bryan, S Washiyama, P Reddy, B Gaddy, B Sarkar, ... Applied Physics Letters 112 (6), 2018 | 130 | 2018 |
| Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications B Sarkar, B Lee, V Misra Semiconductor Science and Technology 30 (10), 105014, 2015 | 75 | 2015 |
| Thermal conductivity of single-crystalline AlN R Rounds, B Sarkar, A Klump, C Hartmann, T Nagashima, R Kirste, ... Applied Physics Express 11 (7), 071001, 2018 | 60 | 2018 |
| 6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation R Kirste, Q Guo, JH Dycus, A Franke, S Mita, B Sarkar, P Reddy, ... Applied Physics Express 11 (8), 082101, 2018 | 57 | 2018 |
| The role of chemical potential in compensation control in Si: AlGaN S Washiyama, P Reddy, B Sarkar, MH Breckenridge, Q Guo, P Bagheri, ... Journal of Applied Physics 127 (10), 2020 | 54 | 2020 |
| Defect-free Ni/GaN Schottky barrier behavior with high temperature stability P Reddy, B Sarkar, F Kaess, M Gerhold, E Kohn, R Collazo, Z Sitar Applied Physics Letters 110 (1), 2017 | 46 | 2017 |
| Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes R Rounds, B Sarkar, T Sochacki, M Bockowski, M Imanishi, Y Mori, ... Journal of Applied Physics 124 (10), 2018 | 31 | 2018 |
| Shallow Si donor in ion-implanted homoepitaxial AlN M Hayden Breckenridge, Q Guo, A Klump, B Sarkar, Y Guan, J Tweedie, ... Applied Physics Letters 116 (17), 2020 | 30 | 2020 |
| N-and P-type Doping in Al-rich AlGaN and AlN B Sarkar, S Washiyama, MH Breckenridge, A Klump, JN Baker, P Reddy, ... ECS transactions 86 (12), 25, 2018 | 30 | 2018 |
| The influence of point defects on the thermal conductivity of AlN crystals R Rounds, B Sarkar, D Alden, Q Guo, A Klump, C Hartmann, ... Journal of Applied Physics 123 (18), 2018 | 29 | 2018 |
| High free carrier concentration in p-GaN grown on AlN substrates B Sarkar, S Mita, P Reddy, A Klump, F Kaess, J Tweedie, I Bryan, Z Bryan, ... Applied Physics Letters 111 (3), 2017 | 29 | 2017 |
| High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies P Reddy, S Washiyama, F Kaess, M Hayden Breckenridge, ... Journal of Applied Physics 119 (14), 2016 | 29 | 2016 |
| Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength R Kirste, B Sarkar, P Reddy, Q Guo, R Collazo, Z Sitar Journal of Materials Research 36 (23), 4638-4664, 2021 | 28 | 2021 |
| High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN MH Breckenridge, P Bagheri, Q Guo, B Sarkar, D Khachariya, S Pavlidis, ... Applied Physics Letters 118 (11), 2021 | 28 | 2021 |
| Nonlinear analysis of vanadium-and titanium-based contacts to Al-rich n-AlGaN BB Haidet, B Sarkar, P Reddy, I Bryan, Z Bryan, R Kirste, R Collazo, ... Japanese Journal of Applied Physics 56 (10), 100302, 2017 | 24 | 2017 |
| Temperature dependence of barrier height inhomogeneity in β-Ga2O3 Schottky barrier diodes A Jadhav, LAM Lyle, Z Xu, KK Das, LM Porter, B Sarkar Journal of Vacuum Science & Technology B 39 (4), 2021 | 22 | 2021 |
| On Ni/Au alloyed contacts to Mg-doped GaN B Sarkar, P Reddy, A Klump, F Kaess, R Rounds, R Kirste, S Mita, E Kohn, ... Journal of Electronic Materials 47, 305-311, 2018 | 22 | 2018 |
| The nature of the DX state in Ge-doped AlGaN P Bagheri, R Kirste, P Reddy, S Washiyama, S Mita, B Sarkar, R Collazo, ... Applied Physics Letters 116 (22), 2020 | 18 | 2020 |
| Doping and compensation in heavily Mg doped Al-rich AlGaN films P Bagheri, A Klump, S Washiyama, M Hayden Breckenridge, JH Kim, ... Applied Physics Letters 120 (8), 2022 | 17 | 2022 |
