Ryan B. Lewis
Title
Cited by
Cited by
Year
Sodium carboxymethyl cellulose: a potential binder for Si negative electrodes for Li-ion batteries
J Li, RB Lewis, JR Dahn
Electrochemical and Solid State Letters 10 (2), A17, 2006
5652006
Composition dependence of photoluminescence of GaAs(1−x)Bi(x) alloys
X Lu, DA Beaton, RB Lewis, T Tiedje, Y Zhang
Applied Physics Letters 95 (4), 041903-041903-3, 2009
1812009
Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs(1−x)Bi(x)
X Lu, DA Beaton, RB Lewis, T Tiedje, MB Whitwick
Applied Physics Letters 92 (19), 192110-192110-3, 2008
1592008
Molecular beam epitaxy: from research to mass production
M Henini
Newnes, 2012
1572012
Growth of high Bi concentration GaAs(1-x)Bi(x) by molecular beam epitaxy
RB Lewis, M Masnadi-Shirazi, T Tiedje
Applied Physics Letters 101 (8), 082112-082112-4, 2012
1362012
GaAs(1−x)Bi(x) light emitting diodes
RB Lewis, DA Beaton, X Lu, T Tiedje
Journal of Crystal Growth 311 (7), 1872-1875, 2009
892009
Nanoplasmonic terahertz photoconductive switch on GaAs
B Heshmat, H Pahlevaninezhad, Y Pang, M Masnadi-Shirazi, ...
Nano letters 12 (12), 6255-6259, 2012
882012
In situ AFM measurements of the expansion and contraction of amorphous Sn-Co-C films reacting with lithium
RB Lewis, A Timmons, RE Mar, JR Dahn
Journal of the Electrochemical Society 154 (3), A213, 2007
672007
Recombination mechanisms and band alignment of GaAs(1-x)Bi(x)/GaAs light emitting diodes
N Hossain, IP Marko, SR Jin, K Hild, SJ Sweeney, RB Lewis, DA Beaton, ...
Applied Physics Letters 100 (5), 051105-051105-3, 2012
612012
Temperature dependence of hole mobility in GaAs(1−x)Bi(x) alloys
DA Beaton, RB Lewis, M Masnadi-Shirazi, T Tiedje
Journal of Applied Physics 108 (8), 083708-083708-4, 2010
512010
Surface reconstructions during growth of GaAs(1−x)Bi(x) alloys by molecular beam epitaxy
M Masnadi-Shirazi, DA Beaton, RB Lewis, X Lu, T Tiedje
Journal of Crystal Growth 338 (1), 80-84, 2012
472012
Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8%
M Masnadi-Shirazi, RB Lewis, V Bahrami-Yekta, T Tiedje, M Chicoine, ...
Journal of Applied Physics 116 (22), 223506, 2014
462014
Deep level defects in n-type GaAsBi and GaAs grown at low temperatures
PM Mooney, KP Watkins, Z Jiang, AF Basile, RB Lewis, V Bahrami-Yekta, ...
Journal of Applied Physics 113 (13), 133708, 2013
362013
Anomalous strain relaxation in core–shell nanowire heterostructures via simultaneous coherent and incoherent growth
RB Lewis, L Nicolai, H Küpers, M Ramsteiner, A Trampert, L Geelhaar
Nano letters 17 (1), 136-142, 2017
292017
Diameter evolution of selective area grown Ga-assisted GaAs nanowires
H Küpers, RB Lewis, A Tahraoui, M Matalla, O Krüger, F Bastiman, ...
Nano Research 11 (5), 2885-2893, 2018
282018
Enhanced Terahertz Bandwidth and Power from GaAsBi‐based Sources
B Heshmat, M Masnadi‐Shirazi, RB Lewis, J Zhang, T Tiedje, R Gordon, ...
Advanced Optical Materials 1 (10), 714-719, 2013
222013
Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si (111)
H Küpers, A Tahraoui, RB Lewis, S Rauwerdink, M Matalla, O Krüger, ...
Semiconductor Science and Technology 32 (11), 115003, 2017
202017
Nanowires bending over backward from strain partitioning in asymmetric core–shell heterostructures
RB Lewis, P Corfdir, H Küpers, T Flissikowski, O Brandt, L Geelhaar
Nano letters 18 (4), 2343-2350, 2018
182018
Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant
RB Lewis, P Corfdir, J Herranz, H Küpers, U Jahn, O Brandt, L Geelhaar
Nano Letters 17, 4255−4260, 2017
152017
Deep level defects in GaAs(1−x)Bi(x)/GaAs heterostructures
Z Jiang, DA Beaton, RB Lewis, AF Basile, T Tiedje, PM Mooney
Semiconductor Science and Technology 26 (5), 055020, 2011
152011
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Articles 1–20