liu dawei
liu dawei
Verified email at bristol.ac.uk
Title
Cited by
Cited by
Year
A 6.7-GHz active gate driver for GaN FETs to combat overshoot, ringing, and EMI
HCP Dymond, J Wang, D Liu, JJO Dalton, N McNeill, D Pamunuwa, ...
IEEE Transactions on Power Electronics 33 (1), 581-594, 2017
552017
Multi-level active gate driver for SiC MOSFETs
HCP Dymond, D Liu, J Wang, JJO Dalton, BH Stark
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 5107-5112, 2017
202017
Shaping switching waveforms in a 650 V GaN FET bridge-leg using 6.7 GHz active gate drivers
JJO Dalton, J Wang, HCP Dymond, D Liu, D Pamunuwa, BH Stark, ...
2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 1983-1989, 2017
142017
Design of 370-ps delay floating-voltage level shifters with 30-V/ns power supply slew tolerance
D Liu, SJ Hollis, HCP Dymond, N McNeill, BH Stark
IEEE Transactions on Circuits and Systems II: Express Briefs 63 (7), 688-692, 2016
142016
Reduction of oscillations in a GaN bridge leg using active gate driving with sub-ns resolution, arbitrary gate-resistance patterns
HCP Dymond, D Liu, J Wang, JJO Dalton, N McNeill, D Pamunuwa, ...
2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-6, 2016
132016
Crosstalk suppression in a 650-V GaN FET bridgeleg converter using 6.7-GHz active gate driver
J Wang, D Liu, HCP Dymond, JJO Dalton, BH Stark
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 1955-1960, 2017
122017
A new circuit topology for floating high voltage level shifters
D Liu, SJ Hollis, BH Stark
2014 10th Conference on Ph. D. Research in Microelectronics and Electronics …, 2014
92014
Stretching in time of GaN active gate driving profiles to adapt to changing load current
JJO Dalton, HCP Dymond, J Wang, MH Hedayati, D Liu, D Drury, ...
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 3497-3502, 2018
82018
A new design technique for sub-nanosecond delay and 200 V/ns power supply slew-tolerant floating voltage level shifters for GaN SMPS
D Liu, SJ Hollis, BH Stark
IEEE Transactions on Circuits and Systems I: Regular Papers 66 (3), 1280-1290, 2018
52018
Infinity sensor: Temperature sensing in GaN power devices using peak di/dt
J Wang, MH Hedayati, D Liu, SE Adami, HCP Dymond, JJO Dalton, ...
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 884-890, 2018
52018
Building blocks for future dual-channel GaN gate drivers: Arbitrary waveform driver, bootstrap voltage supply, and level shifter
D Liu, HCP Dymond, J Wang, BH Stark, SJ Hollis
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
22019
The system can't perform the operation now. Try again later.
Articles 1–11