noelle gogneau
noelle gogneau
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Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN
N Gogneau, D Jalabert, E Monroy, T Shibata, M Tanaka, B Daudin
Journal of Applied physics 94 (4), 2254-2261, 2003
Epitaxy of GaN nanowires on graphene
V Kumaresan, L Largeau, A Madouri, F Glas, H Zhang, F Oehler, ...
Nano letters 16 (8), 4895-4902, 2016
Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
E Monroy, B Daudin, E Bellet-Amalric, N Gogneau, D Jalabert, F Enjalbert, ...
Journal of Applied Physics 93 (3), 1550-1556, 2003
Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy
E Monroy, E Sarigiannidou, F Fossard, N Gogneau, E Bellet-Amalric, ...
Applied physics letters 84 (18), 3684-3686, 2004
N-polar GaN nanowires seeded by Al droplets on Si (111)
L Largeau, E Galopin, N Gogneau, L Travers, F Glas, JC Harmand
Crystal growth & design 12 (6), 2724-2729, 2012
Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds
E Monroy, N Gogneau, F Enjalbert, F Fossard, D Jalabert, ...
Journal of applied physics 94 (5), 3121-3127, 2003
Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy
N Gogneau, D Jalabert, E Monroy, E Sarigiannidou, JL Rouviere, ...
Journal of applied physics 96 (2), 1104-1110, 2004
GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN
C Adelmann, N Gogneau, E Sarigiannidou, JL Rouviere, B Daudin
Applied physics letters 81 (16), 3064-3066, 2002
Interface dipole and band bending in the hybrid heterojunction
H Henck, ZB Aziza, O Zill, D Pierucci, CH Naylor, MG Silly, N Gogneau, ...
Physical Review B 96 (11), 115312, 2017
Sharp interface in epitaxial graphene layers on 3 C-SiC (100)/Si (100) wafers
A Ouerghi, M Ridene, A Balan, R Belkhou, A Barbier, N Gogneau, ...
Physical Review B 83 (20), 205429, 2011
From single III-nitride nanowires to piezoelectric generators: New route for powering nomad electronics
N Gogneau, N Jamond, P Chrétien, F Houzé, E Lefeuvre, ...
Semiconductor Science and Technology 31 (10), 103002, 2016
Piezo-generator integrating a vertical array of GaN nanowires
N Jamond, P Chrétien, F Houzé, L Lu, L Largeau, O Maugain, L Travers, ...
Nanotechnology 27 (32), 325403, 2016
Development of ion sources from ionic liquids for microfabrication
C Perez-Martinez, S Guilet, N Gogneau, P Jegou, J Gierak, P Lozano
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010
Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots
N Gogneau, F Fossard, E Monroy, S Monnoye, H Mank, B Daudin
Applied physics letters 84 (21), 4224-4226, 2004
Comparison of the structural quality in Ga-face and N-face polarity GaN/AlN multiple-quantum-well structures
E Sarigiannidou, E Monroy, N Gogneau, G Radtke, P Bayle-Guillemaud, ...
Semiconductor science and technology 21 (5), 612, 2006
Self-induced growth of vertical GaN nanowires on silica
V Kumaresan, L Largeau, F Oehler, H Zhang, O Mauguin, F Glas, ...
Nanotechnology 27 (13), 135602, 2016
Surfactant effect of gallium during the growth of GaN on by plasma-assisted molecular beam epitaxy
N Gogneau, E Sarigiannidou, E Monroy, S Monnoye, H Mank, B Daudin
Applied physics letters 85 (8), 1421-1423, 2004
In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy
E Monroy, N Gogneau, D Jalabert, E Bellet-Amalric, Y Hori, F Enjalbert, ...
Applied physics letters 82 (14), 2242-2244, 2003
Sub-meV photoluminescence linewidth and electron mobility in quantum wells grown by metalorganic vapor phase epitaxy on slightly …
E Pelucchi, N Moret, B Dwir, DY Oberli, A Rudra, N Gogneau, A Kumar, ...
Journal of applied physics 99 (9), 093515, 2006
Time-resolved characterization of quantum dots emitting in the -band telecommunication window
R Hostein, A Michon, G Beaudoin, N Gogneau, G Patriache, JY Marzin, ...
Applied physics letters 93 (7), 073106, 2008
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