Ferenc Riesz
Ferenc Riesz
Centre for Energy Research, Institute for Technical Physics and
Dirección de correo verificada de mfa.kfki.hu
Citado por
Citado por
Apparatus and measurement procedure for the fast, quantitative, non-contact topographic investigation of semiconductor wafers and other mirror like surfaces
IE Lukács, J Makai, L Pfitzner, F Riesz, B Szentpali
US Patent 7,133,140, 2006
Geometrical optical model of the image formation in Makyoh (magic-mirror) topography
F Riesz
Journal of Physics D: Applied Physics 33 (23), 3033, 2000
Lattice misfit and relative tilt of lattice planes in semiconductor heterostructures
A Pesek, K Hingerl, F Riesz, K Lischka
Semiconductor science and technology 6 (7), 705, 1991
Crystallographic tilting in high‐misfit (100) semiconductor heteroepitaxial systems
F Riesz
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14 (2 …, 1996
A transient method for measuring current-voltage characteristics with negative differential resistance regions
L Dozsa, F Riesz, J Karányi, V Van Tuyen, B Szentpáli
Physica status solidi. A. Applied research 163 (1), R1-R2, 1997
Crystallographic tilting in lattice‐mismatched heteroepitaxy: A Dodson–Tsao relaxation approach
F Riesz
Journal of applied physics 79 (8), 4111-4117, 1996
Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions
F Riesz, K Lischka, K Rakennus, T Hakkarainen, A Pesek
Journal of crystal growth 114 (1-2), 127-132, 1991
Makyoh topography: a simple yet powerful optical method for flatness and defect characterization of mirror-like surfaces
F Riesz
Optical Micro-and Nanometrology in Manufacturing Technology 5458, 86-100, 2004
Makyoh topography for the morphological study of compound semiconductor wafers and structures
F Riesz
Materials Science and Engineering: B 80 (1-3), 220-223, 2001
Thermal decomposition of bulk and heteroepitaxial (100) InP surfaces: A combined in situ scanning electron microscopy and mass spectrometric study
F Riesz, L Dobos, J Karanyi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
Makyoh topography: curvature measurements and implications for the image formation
J Szabó, F Riesz, B Szentpáli
Japanese journal of applied physics 35 (2B), L258, 1996
Ion implantation modified stainless steel as a substrate for hydroxyapatite deposition. Part I. Surface modification and characterization
L Pramatarova, E Pecheva, V Krastev, F Riesz
Journal of Materials Science: Materials in Medicine 18 (3), 435-440, 2007
Camera length and field of view in Makyoh-topography instruments
F Riesz
Review of Scientific Instruments 72 (2), 1591-1593, 2001
Rotated tilting in lattice-mismatched heteroepitaxial systems
F Riesz
Journal of crystal growth 140 (1-2), 213-218, 1994
Thermal decomposition of InP surfaces: volatile component loss, morphological changes, and pattern formation
F Riesz, L Dobos, C Vignali, C Pelosi
Materials Science and Engineering: B 80 (1-3), 54-59, 2001
Carrier profiling of a heterojunction bipolar transistor and p–i–n photodiode structures by electrochemical C–V technique
R Kinder, Á Nemcsics, R Harman, F Riesz, B Pécz
physica status solidi (a) 175 (2), 631-636, 1999
Mapping of Bragg-surface diffraction of InP/GaAs (1 0 0) structure
LH Avanci, MA Hayashi, LP Cardoso, SL Morelhão, F Riesz, K Rakennus, ...
Journal of crystal growth 188 (1-4), 220-224, 1998
Makyoh Topography for the Study of Large‐Area Extended Defects in Semiconductors
F Riesz
physica status solidi (a) 171 (1), 403-409, 1999
Can epilayer tilt relieve misfit strain in lattice-mismatched heterostructures?
F Riesz
Vacuum 46 (8-10), 1021-1023, 1995
Thermo-mechanical design and characterization of low dissipation micro-hotplates operated above 500° C
F Biró, C Dücső, Z Hajnal, F Riesz, AE Pap, I Bársony
Microelectronics Journal 45 (12), 1822-1828, 2014
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