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Ignasi Fina Martínez
Ignasi Fina Martínez
Other names0000-0003-4182-6194
ICMAB-CSIC - Institut de Ciència de Materials de Barcelona, Campus UAB, Bellaterra 08193, Barcelona
Verified email at icmab.es - Homepage
Title
Cited by
Cited by
Year
Room-temperature antiferromagnetic memory resistor
X Marti, I Fina, C Frontera, J Liu, P Wadley, Q He, RJ Paull, JD Clarkson, ...
Nature materials 13 (4), 367-374, 2014
6932014
Towards oxide electronics: a roadmap
M Coll, J Fontcuberta, M Althammer, M Bibes, H Boschker, A Calleja, ...
Applied surface science 482, 1-93, 2019
2842019
Multiferroic iron oxide thin films at room-temperature
M Gich, I Fina, A Morelli, F Sánchez, M Alexe, J Gàzquez, J Fontcuberta, ...
arXiv preprint arXiv:1405.4909, 2014
2172014
Electric control of magnetism at the Fe/BaTiO3 interface
G Radaelli, D Petti, E Plekhanov, I Fina, P Torelli, BR Salles, M Cantoni, ...
Nature communications 5 (1), 3404, 2014
2062014
Anisotropic magnetoresistance in an antiferromagnetic semiconductor
I Fina, X Marti, D Yi, J Liu, JH Chu, C Rayan-Serrao, S Suresha, AB Shick, ...
Nature communications 5 (1), 1-7, 2014
1862014
Magnetization reversal by electric-field decoupling of magnetic and ferroelectric domain walls in multiferroic-based heterostructures
V Skumryev, V Laukhin, I Fina, X Martí, F Sánchez, M Gospodinov, ...
Physical review letters 106 (5), 057206, 2011
1512011
Nonferroelectric contributions to the hysteresis cycles in manganite thin films: A comparative study of measurement techniques
I Fina, L Fàbrega, E Langenberg, X Martí, F Sánchez, M Varela, ...
Journal of Applied Physics 109 (7), 074105, 2011
1332011
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
S Estandia, N Dix, J Gazquez, I Fina, J Lyu, MF Chisholm, J Fontcuberta, ...
ACS Applied Electronic Materials 1 (8), 1449-1457, 2019
1242019
Crystal and magnetic structures, magnetic and ferroelectric properties of strontium ferrite partially substituted with in ions
V Turchenko, VG Kostishyn, S Trukhanov, F Damay, F Porcher, ...
Journal of Alloys and Compounds 821, 153412, 2020
1022020
Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
J Lyu, I Fina, R Solanas, J Fontcuberta, F Sánchez
Applied Physics Letters 113 (8), 2018
982018
Impact of In3+ cations on structure and electromagnetic state of M− type hexaferrites
VA Turchenko, SV Trukhanov, VG Kostishin, F Damay, F Porcher, ...
Journal of Energy Chemistry 69, 667-676, 2022
972022
Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
J Lyu, I Fina, R Solanas, J Fontcuberta, F Sánchez
ACS Applied Electronic Materials 1 (2), 220-228, 2019
972019
High polarization, endurance and retention in sub-5 nm Hf 0.5 Zr 0.5 O 2 films
J Lyu, T Song, I Fina, F Sánchez
Nanoscale 12 (20), 11280-11287, 2020
822020
Features of structure, magnetic state and electrodynamic performance of SrFe12−xInxO19
VA Turchenko, SV Trukhanov, VG Kostishin, F Damay, F Porcher, ...
Scientific reports 11 (1), 18342, 2021
812021
Band Gap Tuning of Solution-Processed Ferroelectric Perovskite BiFe1–xCoxO3 Thin Films
P Machado, M Scigaj, J Gazquez, E Rueda, A Sánchez-Díaz, I Fina, ...
Chemistry of Materials 31 (3), 947-954, 2019
772019
Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
D Petti, E Albisetti, H Reichlová, J Gazquez, M Varela, M Molina-Ruiz, ...
Applied Physics Letters 102 (19), 2013
772013
Spintronic Functionality of BiFeO3 Domain Walls
JH Lee, I Fina, X Marti, YH Kim, D Hesse, M Alexe
Advanced Materials 26 (41), 7078-7082, 2014
722014
Enhanced ferroelectricity in epitaxial Hf0. 5Zr0. 5O2 thin films integrated with Si (001) using SrTiO3 templates
J Lyu, I Fina, R Bachelet, G Saint-Girons, S Estandía, J Gázquez, ...
Applied Physics Letters 114 (22), 2019
712019
Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
I Fina, F Sanchez
ACS Applied Electronic Materials 3 (4), 1530-1549, 2021
692021
Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)
S Estandía, N Dix, MF Chisholm, I Fina, F Sánchez
Crystal Growth & Design 20 (6), 3801-3806, 2020
692020
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