Studies on structural and dielectric properties of NbO2-Nb2O5 thin-film-based devices K Islam, R Sultana, B Satpati, S Chakraborty
Vacuum 195, 110675, 2022
12 2022 Effect of Zr doping and lattice oxygen release on the resistive switching properties of ZrxHf1− xO2-based metal-oxide-semiconductor devices R Sultana, K Islam, A Rakshit, M Mukherjee, S Chakraborty
Microelectronic Engineering 216, 111099, 2019
11 2019 Effect of oxygen content and crystallization temperature on the insulator-to-metal transition properties of vanadium oxide thin-films A Rakshit, K Islam, R Sultana, S Chakraborty
Vacuum 180, 109633, 2020
9 2020 X-ray reflectivity and X-ray photoelectron spectroscopy studies on reactively sputtered K Islam, R Sultana, A Rakshit, UK Goutam, S Chakraborty
SN Applied Sciences 2 (4), 782, 2020
5 * 2020 Insulator-to-metal transition of vanadium oxide-based metal-oxide-semiconductor devices at discrete measuring temperatures A Rakshit, K Islam, AK Sinha, S Chakraborty
Semiconductor Science and Technology 34 (5), 055001, 2019
2 2019 ZrO2 Reduction at Low Temperature in Co-Sputtered ZrxHf1− xO2 Thin-Films R Sultana, K Islam, S Chakraborty
Journal of Nature 4, 11-15, 2021
1 2021 Opto-electronic properties of ZrxHf1− xO2/Al/ZrxHf1− xO2 thin-films: The influence of substrate temperature R Sultana, K Islam, M Saifuddin, B Satpati, S Chakraborty
Vacuum 213, 112058, 2023
2023 Characterization and electrical response of reactively sputtered thin film deposited at oxygen and nitrous oxide environment K Islam, R Sultana, S Chakraborty
International Journal of Innovative Research in Physics 3 (2), 28-34, 2022
2022 Influence of oxygen and argon ratio on electrical and physical characteristics of ZrxHf1–xO2-based MOS devices R Sultana, K Islam, S Chakraborty
International Journal of Innovative Research in Physics 3 (2), 21-27, 2022
2022 
Abhishek RakshitPostdoctoral Fellow at the Technion - Israel Institute of TechnologyDirección de correo verificada de campus.technion.ac.il
