Temperature effects in NAND flash memories: A comparison between 2-D and 3-D arrays D Resnati, A Goda, G Nicosia, C Miccoli, AS Spinelli, CM Compagnoni
IEEE Electron Device Letters 38 (4), 461-464, 2017
61 2017 Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories C Miccoli, CM Compagnoni, S Beltrami, AS Spinelli, A Visconti
IEEE transactions on electron devices 58 (8), 2406-2414, 2011
58 2011 Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND flash memory arrays CM Compagnoni, C Miccoli, R Mottadelli, S Beltrami, M Ghidotti, ...
2010 IEEE International Reliability Physics Symposium, 604-610, 2010
44 2010 Time dependent threshold-voltage fluctuations in NAND Flash memories: From basic physics to impact on array operation A Goda, C Miccoli, CM Compagnoni
2015 IEEE International Electron Devices Meeting (IEDM), 14.7. 1-14.7. 4, 2015
31 2015 Revisiting Charge Trapping/Detrapping in Flash Memories From a Discrete and Statistical Standpoint—Part I: GM Paolucci, CM Compagnoni, C Miccoli, AS Spinelli, AL Lacaita, ...
IEEE Transactions on Electron Devices 61 (8), 2802-2810, 2014
24 2014 Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays C Miccoli, GM Paolucci, CM Compagnoni, AS Spinelli, A Goda
2015 IEEE International Reliability Physics Symposium, MY. 9.1-MY. 9.6, 2015
22 2015 Resolving discrete emission events: A new perspective for detrapping investigation in NAND Flash memories C Miccoli, J Barber, CM Compagnoni, GM Paolucci, J Kessenich, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3B. 1.1-3B. 1.6, 2013
22 2013 Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint—Part II: On-field operation and distributed-cycling effects GM Paolucci, CM Compagnoni, C Miccoli, AS Spinelli, AL Lacaita, ...
IEEE Transactions on Electron Devices 61 (8), 2811-2819, 2014
21 2014 Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories C Miccoli, CM Compagnoni, AS Spinelli, AL Lacaita
2011 International Reliability Physics Symposium, MY. 5.1-MY. 5.6, 2011
20 2011 Assessment of distributed-cycling schemes on 45nm NOR flash memory arrays C Miccoli, CM Compagnoni, L Chiavarone, S Beltrami, AL Lacaita, ...
2012 IEEE International Reliability Physics Symposium (IRPS), 2A. 1.1-2A. 1.7, 2012
18 2012 Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories CM Compagnoni, C Miccoli, AL Lacaita, A Marmiroli, AS Spinelli, ...
IEEE electron device letters 31 (11), 1196-1198, 2010
17 2010 A single-electron analysis of NAND Flash memory programming G Nicosia, GM Paolucci, CM Compagnoni, D Resnati, C Miccoli, ...
2015 IEEE International Electron Devices Meeting (IEDM), 14.8. 1-14.8. 4, 2015
11 2015 Programming memory devices A Goda, T Vali, C Miccoli, P Kalavade
US Patent 10,217,515, 2019
10 2019 First detection of single-electron charging of the floating gate of NAND flash memory cells CM Compagnoni, GM Paolucci, C Miccoli, AS Spinelli, AL Lacaita, ...
IEEE Electron Device Letters 36 (2), 132-134, 2014
9 2014 A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories GM Paolucci, CM Compagnoni, C Miccoli, M Bertuccio, S Beltrami, ...
2014 IEEE International Reliability Physics Symposium, 2E. 2.1-2E. 2.6, 2014
9 2014 String current in decananometer NAND Flash arrays: A compact-modeling investigation GM Paolucci, C Miccoli, CM Compagnoni, AS Spinelli, AL Lacaita
IEEE transactions on electron devices 59 (9), 2331-2337, 2012
8 2012 Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND flash C Miccoli, CM Compagnoni, SM Amoroso, A Spessot, P Fantini, A Visconti, ...
IEEE electron device letters 31 (11), 1202-1204, 2010
8 2010 A step ahead toward a new microscopic picture for charge trapping/detrapping in Flash memories D Resnati, CM Compagnoni, GM Paolucci, C Miccoli, J Barber, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 6C-3-1-6C-3-7, 2016
7 2016 Reliability characterization issues for nanoscale flash memories: a case study on 45-nm NOR devices C Miccoli, CM Compagnoni, L Chiavarone, S Beltrami, AL Lacaita, ...
IEEE Transactions on Device and Materials Reliability 13 (2), 362-369, 2013
7 2013 Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND flash memory arrays D Resnati, CM Compagnoni, GM Paolucci, C Miccoli, AS Spinelli, ...
IEEE Electron Device Letters 36 (7), 678-680, 2015
6 2015 