Herve Jaouen
Herve Jaouen
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Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys
YM Niquet, D Rideau, C Tavernier, H Jaouen, X Blase
Physical Review B 79 (24), 245201, 2009
1812009
Transformer for integrated circuits
M Marty, H Jaouen
US Patent 6,031,445, 2000
1742000
Strained Si, Ge, and Si 1− x Ge x alloys modeled with a first-principles-optimized full-zone k∙ p method
D Rideau, M Feraille, L Ciampolini, M Minondo, C Tavernier, H Jaouen, ...
Physical Review B 74 (19), 195208, 2006
1692006
A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET
E Fuchs, P Dollfus, G Le Carval, S Barraud, D Villanueva, F Salvetti, ...
IEEE transactions on electron devices 52 (10), 2280-2289, 2005
562005
Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni–Si reactive film formation
C Rivero, P Gergaud, M Gailhanou, O Thomas, B Froment, H Jaouen, ...
Applied Physics Letters 87 (4), 041904, 2005
482005
LDMOS modeling for analog and RF circuit design
A Canepari, G Bertrand, A Giry, M Minondo, F Blanchet, H Jaouen, ...
Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005
342005
On the validity of the effective mass approximation and the Luttinger kp model in fully depleted SOI MOSFETs
D Rideau, M Feraille, M Michaillat, YM Niquet, C Tavernier, H Jaouen
Solid-State Electronics 53 (4), 452-461, 2009
322009
In situ study of stress evolution during the reaction of a nickel film with a silicon substrate
C Rivero, P Gergaud, O Thomas, B Froment, H Jaouen
Microelectronic engineering 76 (1-4), 318-323, 2004
302004
On the accuracy of current TCAD hot carrier injection models in nanoscale devices
A Zaka, Q Rafhay, M Iellina, P Palestri, R Clerc, D Rideau, D Garetto, ...
Solid-state electronics 54 (12), 1669-1674, 2010
192010
Integrated sound transmitter and receiver, and corresponding method for making same
H Jaouen, T Skotnicki, M Jurczak
US Patent 6,670,686, 2003
19*2003
Random telegraph signal noise SPICE modeling for circuit simulators
C Leyris, S Pilorget, M Marin, M Minondo, H Jaouen
ESSDERC 2007-37th European Solid State Device Research Conference, 187-190, 2007
182007
Semiconductor device having separated exchange means
H Jaouen, M Marty
US Patent 6,081,030, 2000
182000
Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model
D Garetto, YM Randriamihaja, A Zaka, D Rideau, A Schmid, H Jaouen, ...
Solid-state electronics 71, 74-79, 2012
172012
FEM-based method to determine mechanical stress evolution during process flow in microelectronics. Application to stress-voiding
S Orain, JC Barbe, X Federspiel, P Legallo, H Jaouen
5th International Conference on Thermal and Mechanical Simulation and …, 2004
172004
Electrical and physical investigation of defect annihilation in arsenic implanted silicon
J Said, H Jaouen, G Ghibaudo, I Stoemenos
physica status solidi (a) 117 (1), 99-104, 1990
151990
Electronic transport investigation of arsenic‐implanted silicon. II. Annealing kinetics of defects
C Christofides, G Ghibaudo, H Jaouen
Journal of applied physics 65 (12), 4840-4844, 1989
151989
Lateral operation bipolar transistor and a corresponding fabrication process
O Menut, H Jaouen
US Patent 6,897,545, 2005
142005
Investigations of stress sensitivity of 0.12 CMOS technology using process modeling
V Senez, T Hoffmann, E Robilliart, G Bouche, H Jaouen, M Lunenborg, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
142001
The STORM technology CAD system
J Lorenz, C Hill, H Jaouen, C Lombardi, C Lyden, K De Meyer, J Pelka, ...
Microelectronics journal 26 (2-3), 113-135, 1995
141995
Etude de silicium implanté à l'arsenic par effet de transport. Influence du recuit thermique
C Christofides, G Ghibaudo, H Jaouen
Revue de physique appliquée 22 (6), 407-412, 1987
141987
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