Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys YM Niquet, D Rideau, C Tavernier, H Jaouen, X Blase Physical Review B 79 (24), 245201, 2009 | 181 | 2009 |
Transformer for integrated circuits M Marty, H Jaouen US Patent 6,031,445, 2000 | 174 | 2000 |
Strained Si, Ge, and Si 1− x Ge x alloys modeled with a first-principles-optimized full-zone k∙ p method D Rideau, M Feraille, L Ciampolini, M Minondo, C Tavernier, H Jaouen, ... Physical Review B 74 (19), 195208, 2006 | 169 | 2006 |
A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET E Fuchs, P Dollfus, G Le Carval, S Barraud, D Villanueva, F Salvetti, ... IEEE transactions on electron devices 52 (10), 2280-2289, 2005 | 56 | 2005 |
Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni–Si reactive film formation C Rivero, P Gergaud, M Gailhanou, O Thomas, B Froment, H Jaouen, ... Applied Physics Letters 87 (4), 041904, 2005 | 48 | 2005 |
LDMOS modeling for analog and RF circuit design A Canepari, G Bertrand, A Giry, M Minondo, F Blanchet, H Jaouen, ... Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005 | 34 | 2005 |
On the validity of the effective mass approximation and the Luttinger kp model in fully depleted SOI MOSFETs D Rideau, M Feraille, M Michaillat, YM Niquet, C Tavernier, H Jaouen Solid-State Electronics 53 (4), 452-461, 2009 | 32 | 2009 |
In situ study of stress evolution during the reaction of a nickel film with a silicon substrate C Rivero, P Gergaud, O Thomas, B Froment, H Jaouen Microelectronic engineering 76 (1-4), 318-323, 2004 | 30 | 2004 |
On the accuracy of current TCAD hot carrier injection models in nanoscale devices A Zaka, Q Rafhay, M Iellina, P Palestri, R Clerc, D Rideau, D Garetto, ... Solid-state electronics 54 (12), 1669-1674, 2010 | 19 | 2010 |
Integrated sound transmitter and receiver, and corresponding method for making same H Jaouen, T Skotnicki, M Jurczak US Patent 6,670,686, 2003 | 19* | 2003 |
Random telegraph signal noise SPICE modeling for circuit simulators C Leyris, S Pilorget, M Marin, M Minondo, H Jaouen ESSDERC 2007-37th European Solid State Device Research Conference, 187-190, 2007 | 18 | 2007 |
Semiconductor device having separated exchange means H Jaouen, M Marty US Patent 6,081,030, 2000 | 18 | 2000 |
Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model D Garetto, YM Randriamihaja, A Zaka, D Rideau, A Schmid, H Jaouen, ... Solid-state electronics 71, 74-79, 2012 | 17 | 2012 |
FEM-based method to determine mechanical stress evolution during process flow in microelectronics. Application to stress-voiding S Orain, JC Barbe, X Federspiel, P Legallo, H Jaouen 5th International Conference on Thermal and Mechanical Simulation and …, 2004 | 17 | 2004 |
Electrical and physical investigation of defect annihilation in arsenic implanted silicon J Said, H Jaouen, G Ghibaudo, I Stoemenos physica status solidi (a) 117 (1), 99-104, 1990 | 15 | 1990 |
Electronic transport investigation of arsenic‐implanted silicon. II. Annealing kinetics of defects C Christofides, G Ghibaudo, H Jaouen Journal of applied physics 65 (12), 4840-4844, 1989 | 15 | 1989 |
Lateral operation bipolar transistor and a corresponding fabrication process O Menut, H Jaouen US Patent 6,897,545, 2005 | 14 | 2005 |
Investigations of stress sensitivity of 0.12 CMOS technology using process modeling V Senez, T Hoffmann, E Robilliart, G Bouche, H Jaouen, M Lunenborg, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 14 | 2001 |
The STORM technology CAD system J Lorenz, C Hill, H Jaouen, C Lombardi, C Lyden, K De Meyer, J Pelka, ... Microelectronics journal 26 (2-3), 113-135, 1995 | 14 | 1995 |
Etude de silicium implanté à l'arsenic par effet de transport. Influence du recuit thermique C Christofides, G Ghibaudo, H Jaouen Revue de physique appliquée 22 (6), 407-412, 1987 | 14 | 1987 |