| Explicit continuous model for long-channel undoped surrounding gate MOSFETs B Iniguez, D Jimenez, J Roig, HA Hamid, LF Marsal, J Pallarès IEEE Transactions on Electron Devices 52 (8), 1868-1873, 2005 | 262 | 2005 |
| Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate-all-around-based MOSFETs H Abd El Hamid, B Iñíguez, JR Guitart IEEE transactions on electron devices 54 (3), 572-579, 2007 | 182 | 2007 |
| Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs H Abd El Hamid, JR Guitart, B Iñíguez IEEE Transactions on Electron Devices 54 (6), 1402-1408, 2007 | 137 | 2007 |
| Adipose Stem Cells Display Higher Regenerative Capacities and More Adaptable Electro-Kinetic Properties Compared to Bone Marrow-Derived Mesenchymal Stromal Cells NEB Ahmed El-Badawy, Marwa Amer, Reda Abdelbaset, Sameh N. Sherif, Marwan ... Scientific Reports 6 (37801), 2016 | 102 | 2016 |
| A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs H Abd El Hamid, JR Guitart, V Kilchytska, D Flandre, B Iñiguez IEEE transactions on electron devices 54 (9), 2487-2496, 2007 | 76 | 2007 |
| Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET H Abd-Elhamid, B Iniguez, D Jiménez, J Roig, J Pallarès, LF Marsal Solid-state electronics 50 (5), 805-812, 2006 | 43 | 2006 |
| Thermal resistance model for standard CMOS thermoelectric generator EF Sawires, MI Eladawy, YI Ismail, H Abdelhamid IEEE Access 6, 8123-8132, 2018 | 26 | 2018 |
| Scaling of TG-FinFETs: 3-D Monte Carlo Simulations in the Ballistic and Quasi-Ballistic Regimes AT Elthakeb, H Abd Elhamid, Y Ismail IEEE Transaction on electron devices journal 62 (6), 2015 | 21 | 2015 |
| Lab on a chip based on CMOS technology: system architectures, microfluidic packaging, and challenges YH Ghallab, H Abd El-Hamid, Y Ismail IEEE Design & Test 32 (6), 20-31, 2015 | 20 | 2015 |
| Analytical predictive modeling for the study of the scalability limits of multiple gate MOSFETs H Abd El-Hamid, J Roig, B Iniguez Solid-state electronics 51 (3), 414-422, 2007 | 16 | 2007 |
| Fast and accurate PV model for SPICE simulation H Abdelhamid, A Edris, A Helmy, Y Ismail Journal of Computational Electronics 18 (1), 260-270, 2019 | 15 | 2019 |
| Continuous current and surface potential models for undoped and lightly doped double-gate metal-oxide-semiconductor field-effect transistors H Abd Elhamid, MJ Deen Journal of Applied Physics 103 (11), 2008 | 15 | 2008 |
| Compact modeling of multiple gate mos devices. HM Abd El Hamid Universitat Rovira i Virgili, 2007 | 12 | 2007 |
| The effect of different surface plasmon polariton shapes on thin-film solar cell efficiency K ElKhamisy, H Abdelhamid, S Elagooz, ES El-Rabaie Journal of Computational Electronics 20 (5), 1807-1814, 2021 | 10 | 2021 |
| Optimal design of intermediate reflector layer in micromorph silicon thin-film solar cells AE Khalifa, HA Elhamid, MA Swillam Journal of Nanophotonics 10 (4), 9, 2016 | 9 | 2016 |
| An electro-kinetic platform based on printed circuit Board technology for identification and characterization of biological cells YI Reda Abdelbaseta, Marwan Abouelalla, Yehya H.Ghallabab, Hamdy Abdelhamid Microelectronic Engineering, 2019 | 8 | 2019 |
| The effect of different surface grating shapes on thin film solar cell efficiency KM ElKhamisy, S El-Rabaie, SS Elagooz, H Abd Elhamid 2019 International Conference on Innovative Trends in Computer Engineering …, 2019 | 8 | 2019 |
| Impedance analysis of different shapes of the normal and malignant white blood cells S Sherif, YH Ghallab, A Seddik, H Abdelhamid, Y Ismail 2018 9th Cairo International Biomedical Engineering Conference (CIBEC), 65-68, 2018 | 8 | 2018 |
| Two‐dimensional models for quantum effects on short channel electrostatics of lightly doped symmetric double‐gate MOSFETs RY El Kashlan, H Abd El Hamid, YI Ismail IET Circuits, Devices & Systems 12 (4), 341-346, 2018 | 8 | 2018 |
| A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs) O Samy, H Abdelhamid, Y Ismail, A Zekry Microelectronics Reliability 67, 82-88, 2016 | 8 | 2016 |
Yehea IsmailProfessor, the American University in Cairo, zewail cityCorreu electrònic verificat a aucegypt.edu
