High performance 100 nm T-gate strained Si/Si0. 6Ge0. 4 n-MODFET F Aniel, M Enciso-Aguilar, L Giguerre, P Crozat, R Adde, T Mack, U Seiler, ... Solid-State Electronics 47 (2), 283-289, 2003 | 50 | 2003 |
Structure and mechanism formation of polyelectrolyte complex obtained from PSS/PAH system: effect of molar mixing ratio, base–acid conditions, and ionic strength C Márquez-Beltrán, L Castañeda, M Enciso-Aguilar, G Paredes-Quijada, ... Colloid and Polymer Science 291, 683-690, 2013 | 31 | 2013 |
DC and high frequency performance of 0.1 µm n-type Si/Si0. 6Ge0. 4 MODFET with fmax= 188 GHz at 300K and fmax= 230 GHz at 50K M Enciso-Aguilar, F Aniel, P Crozat, R Adde, HJ Herzog, T Hackbarth, ... Electronics Letters 39 (1), 149-151, 2003 | 28 | 2003 |
Sub-100 nm gate technologies for Si/SiGe-buried-channel RF devices M Zeuner, T Hackbarth, M Enciso-Aguilar, F Aniel, H Von Känel Japanese Journal of Applied Physics 42 (4S), 2363, 2003 | 25 | 2003 |
Indoor 2.4 GHz microwave propagation study using 3D FDTD approach J Sosa, S Coss, A Rodríguez, L Rodríguez, M Galaz, E Ramírez, M Enciso Electronics letters 47 (24), 1308-1309, 2011 | 24 | 2011 |
0.3 dB minimum noise figure at 2.5 GHz of 0.13 µm Si/Si0. 58Ge0. 42 n-MODFETs M Enciso, F Aniel, P Crozat, R Adde, M Zeuner, A Fox, T Hackbarth Electronics Letters 37 (17), 1089-1090, 2001 | 24 | 2001 |
Development and characterization of cyclic olefin copolymer thin films and their dielectric characteristics as CPW substrate by means of Terahertz Time Domain Spectroscopy LM Díaz-Albarran, E Lugo-Hernandez, E Ramirez-Garcia, ... Microelectronic Engineering 191, 84-90, 2018 | 20 | 2018 |
Transit times of SiGe: C HBTs using nonselective base epitaxy N Zerounian, M Rodriguez, M Enciso, F Aniel, P Chevalier, B Martinet, ... Solid-State Electronics 48 (10-11), 1993-1999, 2004 | 19 | 2004 |
Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance T Hackbarth, HJ Herzog, KH Hieber, U König, S Mantl, B Holländer, ... Solid-State Electronics 48 (10-11), 1921-1925, 2004 | 19 | 2004 |
0.1 µm gate length p-type Ge/Si0. 4Ge0. 6 MODFET with 135 GHz fMAX G Höck, T Hackbarth, N Käb, HJ Herzog, M Enciso, F Aniel, P Crozat, ... Electronics Letters 36 (16), 1428-1429, 2000 | 19 | 2000 |
Strained Si HFETs for microwave applications: state-of-the-art and further approaches ME Aguilar, M Rodriguez, N Zerounian, F Aniel, T Hackbarth, HJ Herzog, ... Solid-State Electronics 48 (8), 1443-1452, 2004 | 16 | 2004 |
SiGe heterojunction bipolar transistor issues towards high cryogenic performances E Ramirez-Garcia, N Zerounian, P Crozat, M Enciso-Aguilar, P Chevalier, ... Cryogenics 49 (11), 620-625, 2009 | 15 | 2009 |
Numerical simulation of metallic nanostructures interacting with electromagnetic fields using the Lorentz–Drude model and FDTD method M Benavides-Cruz, C Calderón-Ramón, JF Gomez-Aguilar, ... International Journal of Modern Physics C 27 (04), 1650043, 2016 | 14 | 2016 |
High-frequency performance study of CNTFET-based amplifiers JN Ramos-Silva, A Pacheco-Sanchez, LM Diaz-Albarran, ... IEEE Transactions on Nanotechnology 19, 284-291, 2020 | 13 | 2020 |
0.1/spl mu/m gate length p-type Ge/Si/sub 0.4/Ge/sub 0.6/MODFET with 135 GHz f/sub max G Hock, T Hackbarth, HJ Herzog, M Enciso, F Aniel, P Crozat, R Adde, ... Electronics Letters 36 (16), 1428-1429, 2000 | 12 | 2000 |
P. Cereceda-Company, D. Granados, and JL Costa-Krämer LM Diaz-Albarran, E Lugo-Hernandez, E Ramirez-Garcia, ... Microelectron. Eng 191, 84-90, 2018 | 11 | 2018 |
A novel set of reduced equations to model perfect layer matched (PML) in FDTD M Benavides, M Alvarez, C Calderón, J Sosa, M Galaz, M Rodríguez, ... Revista mexicana de física E 57 (1), 25-31, 2011 | 11 | 2011 |
Planar antennas for satellite communications J Sosa-Pedroza, F Martínez-Zúniga, M Enciso-Aguilar Satellite Communications, N. Diodato (Ed.), InTech, 367-394, 2010 | 11 | 2010 |
0.3 dB minimum noise figure of 0.13 µm gate-length strained Si/Si0. 58Ge0. 42 n-MODFETS M Enciso, F Aniel, P Crozat, R Adde, M Zeuner, T Fox, T Hackbarth Elect. Letters 37 (17), 1089-1090, 2001 | 10 | 2001 |
SiGe: C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe: C carriers mobility and relaxation time E Ramirez-Garcia, M Michaillat, F Aniel, N Zerounian, M Enciso-Aguilar, ... Solid-state electronics 61 (1), 58-64, 2011 | 8 | 2011 |