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Mauro Alberto Enciso Aguilar
Mauro Alberto Enciso Aguilar
Instituto Politécnico Nacional. SEPI-ESIME-Zac, Mexico DF
Verified email at ipn.mx
Title
Cited by
Cited by
Year
High performance 100 nm T-gate strained Si/Si0. 6Ge0. 4 n-MODFET
F Aniel, M Enciso-Aguilar, L Giguerre, P Crozat, R Adde, T Mack, U Seiler, ...
Solid-State Electronics 47 (2), 283-289, 2003
502003
Structure and mechanism formation of polyelectrolyte complex obtained from PSS/PAH system: effect of molar mixing ratio, base–acid conditions, and ionic strength
C Márquez-Beltrán, L Castañeda, M Enciso-Aguilar, G Paredes-Quijada, ...
Colloid and Polymer Science 291, 683-690, 2013
312013
DC and high frequency performance of 0.1 µm n-type Si/Si0. 6Ge0. 4 MODFET with fmax= 188 GHz at 300K and fmax= 230 GHz at 50K
M Enciso-Aguilar, F Aniel, P Crozat, R Adde, HJ Herzog, T Hackbarth, ...
Electronics Letters 39 (1), 149-151, 2003
282003
Sub-100 nm gate technologies for Si/SiGe-buried-channel RF devices
M Zeuner, T Hackbarth, M Enciso-Aguilar, F Aniel, H Von Känel
Japanese Journal of Applied Physics 42 (4S), 2363, 2003
252003
Indoor 2.4 GHz microwave propagation study using 3D FDTD approach
J Sosa, S Coss, A Rodríguez, L Rodríguez, M Galaz, E Ramírez, M Enciso
Electronics letters 47 (24), 1308-1309, 2011
242011
0.3 dB minimum noise figure at 2.5 GHz of 0.13 µm Si/Si0. 58Ge0. 42 n-MODFETs
M Enciso, F Aniel, P Crozat, R Adde, M Zeuner, A Fox, T Hackbarth
Electronics Letters 37 (17), 1089-1090, 2001
242001
Development and characterization of cyclic olefin copolymer thin films and their dielectric characteristics as CPW substrate by means of Terahertz Time Domain Spectroscopy
LM Díaz-Albarran, E Lugo-Hernandez, E Ramirez-Garcia, ...
Microelectronic Engineering 191, 84-90, 2018
202018
Transit times of SiGe: C HBTs using nonselective base epitaxy
N Zerounian, M Rodriguez, M Enciso, F Aniel, P Chevalier, B Martinet, ...
Solid-State Electronics 48 (10-11), 1993-1999, 2004
192004
Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance
T Hackbarth, HJ Herzog, KH Hieber, U König, S Mantl, B Holländer, ...
Solid-State Electronics 48 (10-11), 1921-1925, 2004
192004
0.1 µm gate length p-type Ge/Si0. 4Ge0. 6 MODFET with 135 GHz fMAX
G Höck, T Hackbarth, N Käb, HJ Herzog, M Enciso, F Aniel, P Crozat, ...
Electronics Letters 36 (16), 1428-1429, 2000
192000
Strained Si HFETs for microwave applications: state-of-the-art and further approaches
ME Aguilar, M Rodriguez, N Zerounian, F Aniel, T Hackbarth, HJ Herzog, ...
Solid-State Electronics 48 (8), 1443-1452, 2004
162004
SiGe heterojunction bipolar transistor issues towards high cryogenic performances
E Ramirez-Garcia, N Zerounian, P Crozat, M Enciso-Aguilar, P Chevalier, ...
Cryogenics 49 (11), 620-625, 2009
152009
Numerical simulation of metallic nanostructures interacting with electromagnetic fields using the Lorentz–Drude model and FDTD method
M Benavides-Cruz, C Calderón-Ramón, JF Gomez-Aguilar, ...
International Journal of Modern Physics C 27 (04), 1650043, 2016
142016
High-frequency performance study of CNTFET-based amplifiers
JN Ramos-Silva, A Pacheco-Sanchez, LM Diaz-Albarran, ...
IEEE Transactions on Nanotechnology 19, 284-291, 2020
132020
0.1/spl mu/m gate length p-type Ge/Si/sub 0.4/Ge/sub 0.6/MODFET with 135 GHz f/sub max
G Hock, T Hackbarth, HJ Herzog, M Enciso, F Aniel, P Crozat, R Adde, ...
Electronics Letters 36 (16), 1428-1429, 2000
122000
P. Cereceda-Company, D. Granados, and JL Costa-Krämer
LM Diaz-Albarran, E Lugo-Hernandez, E Ramirez-Garcia, ...
Microelectron. Eng 191, 84-90, 2018
112018
A novel set of reduced equations to model perfect layer matched (PML) in FDTD
M Benavides, M Alvarez, C Calderón, J Sosa, M Galaz, M Rodríguez, ...
Revista mexicana de física E 57 (1), 25-31, 2011
112011
Planar antennas for satellite communications
J Sosa-Pedroza, F Martínez-Zúniga, M Enciso-Aguilar
Satellite Communications, N. Diodato (Ed.), InTech, 367-394, 2010
112010
0.3 dB minimum noise figure of 0.13 µm gate-length strained Si/Si0. 58Ge0. 42 n-MODFETS
M Enciso, F Aniel, P Crozat, R Adde, M Zeuner, T Fox, T Hackbarth
Elect. Letters 37 (17), 1089-1090, 2001
102001
SiGe: C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe: C carriers mobility and relaxation time
E Ramirez-Garcia, M Michaillat, F Aniel, N Zerounian, M Enciso-Aguilar, ...
Solid-state electronics 61 (1), 58-64, 2011
82011
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