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Pierre-Louis Julliard
Pierre-Louis Julliard
LAAS
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Clusters of defects as a possible origin of random telegraph signal in imager devices: a dft based study
A Jay, A Hémeryck, F Cristiano, D Rideau, PL Julliard, V Goiffon, ...
2021 International Conference on Simulation of Semiconductor Processes and …, 2021
62021
Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling
P Dumas, PL Julliard, J Borrel, S Duguay, F Hilario, F Deprat, V Lu, ...
Journal of Applied Physics 129 (19), 2021
22021
Multi-scale simulations investigation of defects in semiconductor devices
PL Julliard
Université Paul Sabatier-Toulouse III, 2023
2023
Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework
PL Julliard, A Johnsson, N Zographos, R Demoulin, R Monflier, A Jay, ...
Solid-State Electronics 200, 108521, 2023
2023
Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO2
PL Julliard, A Jay, M Gunde, N Salles, F Monsieur, N Guitard, T Cabout, ...
2021 International Conference on Simulation of Semiconductor Processes and …, 2021
2021
Implant heating contribution to amorphous layer formation: a KMC approach
PL Julliard, P Dumas, F Monsieur, F Hilario, D Rideau, A Hémeryck, ...
2020 International Conference on Simulation of Semiconductor Processes and …, 2020
2020
D2. 1: First batch of experimental results on heated implants and SPER
PL Julliard, R Monflier, R Demoulin, RPD STM, FM STM, FH STM, SJ STM, ...
1ST Microelectronics, Crolles, France 2LAAS-CNRS, Université de Toulouse, CNRS, Toulouse, France Email: pierre-louis. julliard@ st. com
PL Julliard, P Dumas, F Monsieur, F Hilario, D Rideau, A Hemeryck, ...
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