| A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti IEEE transactions on electron devices 54 (12), 3369-3377, 2007 | 90 | 2007 |
| Multi-subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz Solid-State Electronics 54 (2), 131-136, 2010 | 51 | 2010 |
| High photocurrent in gated graphene–silicon hybrid photodiodes S Riazimehr, S Kataria, R Bornemann, P Haring Bolívar, FJG Ruiz, ... ACS photonics 4 (6), 1506-1514, 2017 | 50 | 2017 |
| Particle-Swarm optimization in antenna design: Optimization of log-periodic dipole arrays MF Pantoja, AR Bretones, FG Ruiz, SG Garcia, RG Martin IEEE Antennas and Propagation Magazine 49 (4), 34-47, 2007 | 44 | 2007 |
| GA design of a thin-wire bow-tie antenna for GPR applications CMJ Van Coevorden, AR Bretones, MF Pantoja, FJG Ruiz, SG Garcia, ... IEEE Transactions on Geoscience and Remote Sensing 44 (4), 1004-1010, 2006 | 44 | 2006 |
| Modeling the equivalent oxide thickness of surrounding gate SOI devices with high-κ insulators IM Tienda-Luna, FJG Ruiz, L Donetti, A Godoy, F Gámiz Solid-State Electronics 52 (12), 1854-1860, 2008 | 37 | 2008 |
| An Analytical – Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects JB Roldan, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ... IEEE transactions on electron devices 57 (11), 2925-2933, 2010 | 34 | 2010 |
| The multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures C Sampedro-Matarín, F Gámiz, A Godoy, FJG Ruiz IEEE transactions on electron devices 53 (11), 2703-2710, 2006 | 31 | 2006 |
| Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- Insulators FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gámiz IEEE Transactions on Electron Devices 56 (11), 2711-2719, 2009 | 29 | 2009 |
| An analytical model for square GAA MOSFETs including quantum effects E Moreno, JB Roldan, FG Ruiz, D Barrera, A Godoy, F Gámiz Solid-state electronics 54 (11), 1463-1469, 2010 | 28 | 2010 |
| GA design of wire pre-fractal antennas and comparison with other euclidean geometries MF Pantoja, FG Ruiz, AR Bretones, RG Martín, JM Gonzalez-Arbesu, ... IEEE Antennas and Wireless Propagation Letters 2, 238-241, 2003 | 27 | 2003 |
| Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors EG Marin, FG Ruiz, IM Tienda-Luna, A Godoy, P Sánchez-Moreno, ... Journal of Applied Physics 112 (8), 084512, 2012 | 25 | 2012 |
| Surface roughness scattering model for arbitrarily oriented silicon nanowires IM Tienda-Luna, FG Ruiz, A Godoy, B Biel, F Gámiz Journal of Applied Physics 110 (8), 084514, 2011 | 23 | 2011 |
| Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs A Godoy, F Ruiz, C Sampedro, F Gámiz, U Ravaioli Solid-state electronics 51 (9), 1211-1215, 2007 | 21 | 2007 |
| On the numerical modeling of terahertz photoconductive antennas E Moreno, MF Pantoja, FG Ruiz, JB Roldán, SG García Journal of Infrared, Millimeter, and Terahertz Waves 35 (5), 432-444, 2014 | 19 | 2014 |
| Analytical gate capacitance modeling of III–V nanowire transistors EG Marin, FJG Ruiz, IM Tienda-Luna, A Godoy, F Gamiz IEEE transactions on electron devices 60 (5), 1590-1599, 2013 | 18 | 2013 |
| High responsivity and quantum efficiency of graphene/silicon photodiodes achieved by interdigitating Schottky and gated regions S Riazimehr, S Kataria, JM Gonzalez-Medina, S Wagner, M Shaygan, ... ACS Photonics 6 (1), 107-115, 2018 | 17 | 2018 |
| A model of the gate capacitance of surrounding gate transistors: Comparison with double-gate MOSFETs FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gamiz IEEE transactions on electron devices 57 (10), 2477-2483, 2010 | 17 | 2010 |
| Design guidelines of laser reduced graphene oxide conformal thermistor for IoT applications FJ Romero, A Rivadeneyra, V Toral, E Castillo, F García-Ruiz, ... Sensors and Actuators A: Physical 274, 148-154, 2018 | 16 | 2018 |
| Influence of orientation, geometry, and strain on electron distribution in silicon gate-all-around (GAA) MOSFETs IM Tienda-Luna, FJG Ruiz, A Godoy, B Biel, F Gamiz IEEE transactions on electron devices 58 (10), 3350-3357, 2011 | 16 | 2011 |
Andres GodoyUniversidad de GranadaVerified email at ugr.es
