Maria Aboy
TitleCited byYear
Atomistic modeling of amorphization and recrystallization in silicon
L Pelaz, LA Marqués, M Aboy, J Barbolla, GH Gilmer
Applied physics letters 82 (13), 2038-2040, 2003
Microscopic description of the irradiation-induced amorphization in silicon
LA Marqués, L Pelaz, M Aboy, L Enríquez, J Barbolla
Physical review letters 91 (13), 135504, 2003
Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles
M Aboy, L Pelaz, LA Marqués, J Barbolla, A Mokhberi, Y Takamura, ...
Applied physics letters 83 (20), 4166-4168, 2003
Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
M Aboy, L Pelaz, LA Marqués, P López, J Barbolla, R Duffy
Journal of applied physics 97 (10), 103520, 2005
Front-end process modeling in silicon
L Pelaz, LA Marqués, M Aboy, P López, I Santos
The European Physical Journal B 72 (3), 323, 2009
The laser annealing induced phase transition in silicon: a molecular dynamics study
LA Marqués, L Pelaz, J Barbolla
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
Atomistic analysis of defect evolution and transient enhanced diffusion in silicon
M Aboy, L Pelaz, LA Marqués, L Enriquez, J Barbolla
Journal of applied physics 94 (2), 1013-1018, 2003
Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects
LA Marqués, L Pelaz, P López, I Santos, M Aboy
Physical Review B 76 (15), 153201, 2007
Modeling of defects, dopant diffusion and clustering in silicon
M Aboy, I Santos, L Pelaz, LA Marqués, P López
Journal of Computational Electronics 13 (1), 40-58, 2014
Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
L Pelaz, R Duffy, M Aboy, L Marques, P Lopez, I Santos, BJ Pawlak, ...
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008
Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
M Aboy, L Pelaz, P López, LA Marqués, R Duffy, VC Venezia
Applied physics letters 88 (19), 191917, 2006
Kinetics of large B clusters in crystalline and preamorphized silicon
M Aboy, L Pelaz, E Bruno, S Mirabella, S Boninelli
Journal of Applied Physics 110 (7), 073524, 2011
Liquid− liquid equilibria for acetic anhydride+ selected alkanes
M Aboy, S Villa, N Riesco, JA González, I García de la Fuente, JC Cobos
Journal of Chemical & Engineering Data 47 (4), 950-953, 2002
Molecular dynamics characterization of as-implanted damage in silicon
I Santos, LA Marqués, L Pelaz, P López, M Aboy, J Barbolla
Materials Science and Engineering: B 124, 372-375, 2005
Molecular dynamics simulations of damage production by thermal spikes in Ge
P López, L Pelaz, I Santos, LA Marqués, M Aboy
Journal of Applied Physics 111 (3), 033519, 2012
Role of silicon interstitials in boron cluster dissolution
M Aboy, L Pelaz, LA Marqués, P López, J Barbolla, R Duffy, VC Venezia, ...
Applied Physics Letters 86 (3), 031908, 2005
Structural transformations from point to extended defects in silicon: A molecular dynamics study
LA Marqués, L Pelaz, I Santos, P López, M Aboy
Physical Review B 78 (19), 193201, 2008
Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
G Fisicaro, L Pelaz, M Aboy, P Lopez, M Italia, K Huet, F Cristiano, Z Essa, ...
Applied Physics Express 7 (2), 021301, 2014
Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation
L Pelaz, LA Marqués, M Aboy, P López, J Barbolla
Computational materials science 33 (1), 92-105, 2005
Dopant redistribution effects in preamorphized silicon during low temperature annealing
VC Venezia, R Duffy, L Pelaz, M Aboy, A Heringa, PB Griffin, CC Wang, ...
Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International …, 2003
The system can't perform the operation now. Try again later.
Articles 1–20