Jonas Lähnemann
Jonas Lähnemann
Wissenschaftlicher Mitarbeiter, Paul-Drude-Institut für Festkörperelektronik
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Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
W Bergbauer, M Strassburg, C Kölper, N Linder, C Roder, J Lähnemann, ...
Nanotechnology 21 (30), 305201, 2010
1572010
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ...
Physical Review B 85 (4), 045323, 2012
1312012
Self-assisted nucleation and vapor–solid growth of InAs nanowires on bare Si (111)
E Dimakis, J Lähnemann, U Jahn, S Breuer, M Hilse, L Geelhaar, ...
Crystal Growth & Design 11 (9), 4001-4008, 2011
1082011
Direct experimental determination of the spontaneous polarization of GaN
J Lähnemann, O Brandt, U Jahn, C Pfüller, C Roder, P Dogan, F Grosse, ...
Physical Review B 86 (8), 081302, 2012
1052012
Luminescence associated with stacking faults in GaN
J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn
Journal of Physics D: Applied Physics 47 (42), 423001, 2014
952014
Continuous-flow MOVPE of Ga-polar GaN column arrays and core–shell LED structures
X Wang, S Li, MS Mohajerani, J Ledig, HH Wehmann, M Mandl, ...
Crystal Growth & Design 13 (8), 3475-3480, 2013
772013
Current path in light emitting diodes based on nanowire ensembles
F Limbach, C Hauswald, J Lähnemann, M Wölz, O Brandt, A Trampert, ...
Nanotechnology 23 (46), 465301, 2012
602012
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
J Lähnemann, O Brandt, C Pfüller, T Flissikowski, U Jahn, E Luna, ...
Physical Review B 84 (15), 155303, 2011
542011
Photoelectrochemical properties of (In,Ga)N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy
J Kamimura, P Bogdanoff, J Lähnemann, C Hauswald, L Geelhaar, ...
Journal of the American Chemical Society 135 (28), 10242-10245, 2013
532013
N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties
W Bergbauer, M Strassburg, C Kölper, N Linder, C Roder, J Lähnemann, ...
Journal of Crystal Growth 315 (1), 164-167, 2011
522011
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency
P Corfdir, C Hauswald, JK Zettler, T Flissikowski, J Lähnemann, ...
Physical Review B 90 (19), 195309, 2014
482014
UV photosensing characteristics of nanowire-based GaN/AlN superlattices
J Lähnemann, M Den Hertog, P Hille, M De La Mata, T Fournier, ...
Nano letters 16 (5), 3260-3267, 2016
432016
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band
CB Lim, A Ajay, C Bougerol, B Haas, J Schörmann, M Beeler, ...
Nanotechnology 26 (43), 435201, 2015
352015
Impact of Cu-rich growth on the CuIn1− xGaxSe2 surface morphology and related solar cells behaviour
N Barreau, J Lähnemann, F Couzinié-Devy, L Assmann, P Bertoncini, ...
Solar Energy Materials and Solar Cells 93 (11), 2013-2019, 2009
342009
Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short-and mid-wavelength infrared regions
CB Lim, M Beeler, A Ajay, J Lähnemann, E Bellet-Amalric, C Bougerol, ...
Journal of Applied Physics 118 (1), 014309, 2015
302015
Correlation between In content and emission wavelength of InxGa1−xN/GaN nanowire heterostructures
M Wölz, J Lähnemann, O Brandt, VM Kaganer, M Ramsteiner, C Pfüller, ...
Nanotechnology 23 (45), 455203, 2012
302012
Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si (111) by molecular beam epitaxy
P Dogan, O Brandt, C Pfüller, J Lähnemann, U Jahn, C Roder, ...
Crystal Growth & Design 11 (10), 4257-4260, 2011
302011
Metal-exchange catalysis in the growth of sesquioxides: Towards heterostructures of transparent oxide semiconductors
P Vogt, O Brandt, H Riechert, J Lähnemann, O Bierwagen
Physical review letters 119 (19), 196001, 2017
292017
Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
M Spies, MI Den Hertog, P Hille, J Schörmann, J Polaczyński, B Gayral, ...
Nano letters 17 (7), 4231-4239, 2017
282017
Hot wall epitaxy of topological insulator films
Y Takagaki, B Jenichen, U Jahn, M Ramsteiner, KJ Friedland, ...
Semiconductor Science and Technology 26 (12), 125009, 2011
282011
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Artículos 1–20