| The composition effect on the optical properties of aqueous synthesized Cu–In–S and Zn–Cu–In–S quantum dot nanocrystals B Zhang, Y Wang, C Yang, S Hu, Y Gao, Y Zhang, Y Wang, HV Demir, ... Physical Chemistry Chemical Physics 17 (38), 25133-25141, 2015 | 88 | 2015 |
| Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, ZB Kyaw, XL Zhang, SP Lu, ... Applied Physics Letters 102 (24), 2013 | 49 | 2013 |
| Advantages of the blue InGaN/GaN light-emitting diodes with an AlGaN/GaN/AlGaN quantum well structured electron blocking layer ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, Z Kyaw, XL Zhang, SP Lu, ... Acs Photonics 1 (4), 377-381, 2014 | 41 | 2014 |
| A hole accelerator for InGaN/GaN light-emitting diodes ZH Zhang, W Liu, ST Tan, Y Ji, L Wang, B Zhu, Y Zhang, S Lu, X Zhang, ... Applied Physics Letters 105 (15), 2014 | 40 | 2014 |
| On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes ZH Zhang, W Liu, ST Tan, Z Ju, Y Ji, Z Kyaw, X Zhang, N Hasanov, B Zhu, ... Optics Express 22 (103), A779-A789, 2014 | 37 | 2014 |
| On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer ZH Zhang, Y Ji, W Liu, S Tiam Tan, Z Kyaw, Z Ju, X Zhang, N Hasanov, ... Applied Physics Letters 104 (7), 2014 | 36 | 2014 |
| Nonradiative recombination—critical in choosing quantum well number for InGaN/GaN light-emitting diodes YP Zhang, ZH Zhang, W Liu, ST Tan, ZG Ju, XL Zhang, Y Ji, LC Wang, ... Optics Express 23 (3), A34-A42, 2015 | 31 | 2015 |
| Low thermal-mass LEDs: size effect and limits S Lu, W Liu, ZH Zhang, ST Tan, Z Ju, Y Ji, X Zhang, Y Zhang, B Zhu, ... Optics Express 22 (26), 32200-32207, 2014 | 21 | 2014 |
| Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes Y Zhang, ZH Zhang, ST Tan, PL Hernandez-Martinez, B Zhu, S Lu, ... Applied Physics Letters 110 (3), 2017 | 18 | 2017 |
| Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes Z Kyaw, ZH Zhang, W Liu, S Tiam Tan, Z Gang Ju, X Liang Zhang, Y Ji, ... Applied Physics Letters 104 (16), 2014 | 17 | 2014 |
| High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator Y Wang, B Wang, WA Sasangka, S Bao, Y Zhang, HV Demir, J Michel, ... Photonics Research 6 (4), 290-295, 2018 | 11 | 2018 |
| High-performance triangular miniaturized-LEDs for high current and power density applications S Lu, Y Zhang, ZH Zhang, B Zhu, H Zheng, ST Tan, HV Demir ACS Photonics 8 (8), 2304-2310, 2021 | 10 | 2021 |
| Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts N Hasanov, B Zhu, VK Sharma, S Lu, Y Zhang, W Liu, ST Tan, XW Sun, ... Journal of Vacuum Science & Technology B 34 (1), 2016 | 10 | 2016 |
| On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes Z Kyaw, ZH Zhang, W Liu, ST Tan, ZG Ju, XL Zhang, Y Ji, N Hasanov, ... Optics Express 22 (1), 809-816, 2014 | 10 | 2014 |
| Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes B Zhu, W Liu, S Lu, Y Zhang, N Hasanov, X Zhang, Y Ji, ZH Zhang, ... Journal of Physics D: Applied Physics 49 (26), 265106, 2016 | 7 | 2016 |
| Experimental and modeling investigations of miniaturization in InGaN/GaN light-emitting diodes and performance enhancement by micro-wall architecture Y Zhang, S Lu, Y Qiu, J Wu, M Zhang, D Luo Frontiers in Chemistry 8, 630050, 2021 | 4 | 2021 |
| Efficiency boosting by thermal harvesting in ingan/Gan light-emitting diodes S Lu, Y Zhang, Y Qiu, X Liu, M Zhang, D Luo Frontiers in Physics 9, 752476, 2021 | 3 | 2021 |
| Strain-reduced micro-LEDs grown directly using partitioned growth S Lu, Y Zhang, ZH Zhang, PC Tsai, X Zhang, ST Tan, HV Demir Frontiers in chemistry 9, 639023, 2021 | 3 | 2021 |
| Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency H Zheng, VK Sharma, P Tsai, Y Zhang, S Lu, X Zhang, ST Tan, HV Demir AIP Advances 12 (1), 2022 | 2 | 2022 |
| Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes B Zhu, ST Tan, W Liu, S Lu, Y Zhang, S Chen, N Hasanov, X Kang, ... IEEE Photonics Journal 8 (3), 1-8, 2016 | 2 | 2016 |
Hilmi Volkan DemirBilkent University UNAM, Turkey, and NTU SingaporeDirección de correo verificada de bilkent.edu.tr
