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Aurélie Spiesser
Aurélie Spiesser
Senior Research Scientist, Research Center for Emerging Computing Technologies, AIST, Japan
Dirección de correo verificada de aist.go.jp
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Epitaxial growth of Mn5Ge3/Ge (111) heterostructures for spin injection
S Olive-Mendez, A Spiesser, LA Michez, V Le Thanh, A Glachant, ...
Thin Solid Films 517 (1), 191-196, 2008
982008
Control of magnetic properties of epitaxial Mn 5 Ge 3 C x films induced by carbon doping
A Spiesser, I Slipukhina, MT Dau, E Arras, V Le Thanh, L Michez, ...
Physical Review B 84 (16), 165203, 2011
792011
Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium
S Sharma, A Spiesser, SP Dash, S Iba, S Watanabe, BJ Van Wees, ...
Physical Review B 89 (7), 075301, 2014
662014
Giant spin accumulation in silicon nonlocal spin-transport devices
A Spiesser, H Saito, Y Fujita, S Yamada, K Hamaya, S Yuasa, R Jansen
Physical Review Applied 8 (6), 064023, 2017
652017
Large spin accumulation voltages in epitaxial M n 5 G e 3 contacts on Ge without an oxide tunnel barrier
A Spiesser, H Saito, R Jansen, S Yuasa, K Ando
Physical Review B 90 (20), 205213, 2014
542014
Spin accumulation and spin lifetime in p-type germanium at room temperature
S Iba, H Saito, A Spiesser, S Watanabe, R Jansen, S Yuasa, K Ando
Applied Physics Express 5 (5), 053004, 2012
502012
Effect of thickness on structural and magnetic properties of Mn5Ge3 films grown on Ge (111) by solid phase epitaxy
A Spiesser, SF Olive-Mendez, MT Dau, LA Michez, A Watanabe, ...
Thin Solid Films 518 (6), S113-S117, 2010
482010
Voltage tuning of thermal spin current in ferromagnetic tunnel contacts to semiconductors
KR Jeon, BC Min, A Spiesser, H Saito, SC Shin, S Yuasa, R Jansen
Nature materials 13 (4), 360-366, 2014
442014
Magnetic anisotropy in epitaxial MnGe films
A Spiesser, F Virot, LA Michez, R Hayn, S Bertaina, L Favre, M Petit, ...
Physical Review B 86 (3), 035211, 2012
422012
Spin accumulation in nondegenerate and heavily doped p-type germanium
S Iba, H Saito, A Spiesser, S Watanabe, R Jansen, S Yuasa, K Ando
Applied Physics Express 5 (2), 023003, 2012
422012
Thermal stability of epitaxial Mn5Ge3 and carbon-doped Mn5Ge3 films
A Spiesser, V Le Thanh, S Bertaina, LA Michez
Applied Physics Letters 99 (12), 2011
382011
Morphology and composition of Au catalysts on Ge (111) obtained by thermal dewetting
S Hajjar, G Garreau, L Josien, JL Bubendorff, D Berling, A Mehdaoui, ...
Physical Review B 84 (12), 125325, 2011
372011
Epitaxial growth and magnetic properties of Mn5Ge3/Ge and Mn5Ge3Cx/Ge heterostructures for spintronic applications
V Le Thanh, A Spiesser, MT Dau, SF Olive-Mendez, LA Michez, M Petit
Advances in Natural Sciences: Nanoscience and Nanotechnology 4 (4), 043002, 2013
352013
Mn segregation in Ge/Mn5Ge3 heterostructures: The role of surface carbon adsorption
MT Dau, VL Thanh, TG Le, A Spiesser, M Petit, LA Michez, R Daineche
Applied Physics Letters 99 (15), 2011
312011
Magnetic reversal in Mn5Ge3 thin films: an extensive study
LA Michez, A Spiesser, M Petit, S Bertaina, JF Jacquot, D Dufeu, ...
Journal of Physics: Condensed Matter 27 (26), 266001, 2015
272015
Electrical spin injection in p-type Si using Fe/MgO contacts
A Spiesser, S Sharma, H Saito, R Jansen, S Yuasa, K Ando
Spintronics V 8461, 55-63, 2012
242012
Surface free energy of cubic boron nitride films deposited on nanodiamond
A Spiesser, YM Chong, KM Leung, G Abel, GG Ross, MJ Walzak, ...
The Journal of Physical Chemistry C 111 (34), 12768-12772, 2007
182007
Quantification of Spin Drift in Devices with a Heavily Doped Channel
A Spiesser, Y Fujita, H Saito, S Yamada, K Hamaya, W Mizubayashi, ...
Physical Review Applied 11 (4), 044020, 2019
172019
Tunnel spin polarization of Fe/MgO/Si contacts reaching 90% with increasing MgO thickness
A Spiesser, H Saito, S Yuasa, R Jansen
Physical Review B 99 (22), 224427, 2019
162019
Long range Mn segregation and intermixing during subsequent deposition of Ge capping layers on Mn5Ge3/Ge (111) heterostructures
MT Dau, A Spiesser, T LeGiang, LA Michez, SF Olive-Mendez, ...
Thin Solid Films 518 (6), S266-S269, 2010
152010
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
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