| Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe ME Levinshtein, SL Rumyantsev, MS Shur John Wiley & Sons, 2001 | 2200 | 2001 |
| Handbook series on semiconductor parameters M Levinshtein World scientific, 1997 | 2067* | 1997 |
| Nonresonant detection of terahertz radiation in field effect transistors W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ... Journal of Applied Physics 91 (11), 9346-9353, 2002 | 506 | 2002 |
| Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe V Bougrov, ME Levinshtein, SL Rumyantsev, A Zubrilov, MS Shur Bougrov, ME Levinshtein, SL Rumyantsev, A. Zubrilov.− NY: Wiley, 1-50, 2001 | 486 | 2001 |
| Selective gas sensing with a single pristine graphene transistor S Rumyantsev, G Liu, MS Shur, RA Potyrailo, AA Balandin Nano letters 12 (5), 2294-2298, 2012 | 474 | 2012 |
| Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power R Tauk, F Teppe, S Boubanga, D Coquillat, W Knap, YM Meziani, ... Applied Physics Letters 89 (25), 2006 | 445 | 2006 |
| Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors W Knap, F Teppe, Y Meziani, N Dyakonova, J Lusakowski, F Boeuf, ... Applied Physics Letters 85 (4), 675-677, 2004 | 410 | 2004 |
| Properties of Advanced Semiconductor Materials GaN, AlN, SiC, BN, SiC, SiGe Y Goldberg, ME Levinshtein, SL Rumyantsev Edited by ME Levinshtein, SL Rumyantsev, and MS Shur, Eds, 93-148, 2001 | 401 | 2001 |
| Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors W Knap, Y Deng, S Rumyantsev, MS Shur Applied physics letters 81 (24), 4637-4639, 2002 | 382 | 2002 |
| Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor W Knap, Y Deng, S Rumyantsev, JQ Lü, MS Shur, CA Saylor, LC Brunel Applied physics letters 80 (18), 3433-3435, 2002 | 305 | 2002 |
| Resonant and voltage-tunable terahertz detection in InGaAs∕ InP nanometer transistors A El Fatimy, F Teppe, N Dyakonova, W Knap, D Seliuta, G Valušis, ... Applied physics letters 89 (13), 2006 | 270 | 2006 |
| Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe F Schaffler, ME Levinshtein, SL Rumyantsev, MS Shur Eds. ME Levinshtein, SL Rumyantsev, and MS Shur, John Wiley & Sons, Inc …, 2001 | 245 | 2001 |
| Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor F Teppe, W Knap, D Veksler, MS Shur, AP Dmitriev, VY Kachorovskii, ... Applied Physics Letters 87 (5), 2005 | 211 | 2005 |
| Low-frequency electronic noise in the double-gate single-layer graphene transistors G Liu, W Stillman, S Rumyantsev, Q Shao, M Shur, AA Balandin Applied Physics Letters 95 (3), 2009 | 205 | 2009 |
| Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noisesources and physical mechanisms S Rumyantsev, G Liu, W Stillman, M Shur, AA Balandin Journal of Physics: Condensed Matter 22 (39), 395302, 2010 | 197 | 2010 |
| Origin of 1/f noise in graphene multilayers: Surface vs. volume G Liu, S Rumyantsev, MS Shur, AA Balandin Applied Physics Letters 102 (9), 2013 | 167 | 2013 |
| Flicker noise in bilayer graphene transistors Q Shao, G Liu, D Teweldebrhan, AA Balandin, S Rumyantsev, MS Shur, ... IEEE Electron Device Letters 30 (3), 288-290, 2009 | 162 | 2009 |
| SiC materials and devices M Shur, SL Rumyantsev world scientific, 2006 | 160 | 2006 |
| Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices R Samnakay, C Jiang, SL Rumyantsev, MS Shur, AA Balandin Applied Physics Letters 106 (2), 2015 | 154 | 2015 |
| Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts J Renteria, R Samnakay, SL Rumyantsev, C Jiang, P Goli, MS Shur, ... Applied Physics Letters 104 (15), 2014 | 153 | 2014 |
