Dr. Sk. Ziaur Rahaman

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Siddheswar MaikapProfessor of Electronics Engineering, Chang Gung UniversityDirección de correo verificada de mail.cgu.edu.tw
Writam BanerjeeGlobalFoundriesDirección de correo verificada de globalfoundries.com
Amit PrakashCrossbar Inc.,CA, USADirección de correo verificada de crossbar-inc.com
Chih-I WuPrinceton University and National Taiwan University and Industrial Technology Research InstituteDirección de correo verificada de ntu.edu.tw
Samit K RayDepartment of Physics, IIT KharagpurDirección de correo verificada de phy.iitkgp.ac.in
Chao-Sung LAIChang Gung universityDirección de correo verificada de mail.cgu.edu.tw
Somsubhra ChakrabartiResearch staff, Nanyang Technological UniversityDirección de correo verificada de ntu.edu.sg
Mrinmoy DuttaPostdoctoral research scholar, CNR IMMDirección de correo verificada de mdm.imm.cnr.it
Dr. Sourav RoyCHRIST (Deemed to be) UniversityDirección de correo verificada de christuniversity.in
Debanjan JanaASMDirección de correo verificada de asm.com
Subhranu SamantaScientist @ Institute of Microelectronics (IME), A*STAR, SingaporeDirección de correo verificada de ime.a-star.edu.sg
Chi-Feng PaiTSMCDirección de correo verificada de tsmc.com
Tuo-Hung (Alex) HouInstitute of Electronics; National Yang Ming Chiao Tung UniversityDirección de correo verificada de nycu.edu.tw
Prof. Rajat MahapatraProfessor, National Institute of Technology Durgapur, IndiaDirección de correo verificada de ece.nitdgp.ac.in
Dr. Santanu MannaAsst. Prof. IIT Delhi (present); JKU Linz, Austria; CQD Northwestern, USA; UniTrento, Italy, IITKGPDirección de correo verificada de ee.iitd.ac.in
Jer-Ren YangNational Taiwan UniversityDirección de correo verificada de ntu.edu.tw
Tian-Yue ChenNew York UniversityDirección de correo verificada de nyu.edu
Atanu DasSchool of Aeronautics and Astronautics, Zhejiang UniversityDirección de correo verificada de mx.nthu.edu.tw
Dr Anisha RoyChang Gung University, TaiwanDirección de correo verificada de cgu.edu.tw
Sreekanth GinnaramResearch Scientist at Temasek Laboratories @ National University of SingaporeDirección de correo verificada de nus.edu.sg

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Dr. Sk. Ziaur Rahaman

Industrial Technology Research Institute, Electronic and Optoelectronic System Research Laboratories

Dirección de correo verificada de itri.org.tw

Nonvolatile Memory Nanomaterials Embedded Systems Graphene Electronics Spin Hall Effects (SHE) Nano Oscillators


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Conductive-bridging random access memory: challenges and opportunity for 3D architecture D Jana, S Roy, R Panja, M Dutta, SZ Rahaman, R Mahapatra, S Maikap Nanoscale research letters 10, 1-23, 2015	101	2015
Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO_x interface SZ Rahaman, S Maikap, TC Tien, HY Lee, WS Chen, FT Chen, MJ Kao, ... Nanoscale research letters 7, 1-11, 2012	94	2012
Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, MJ Kao, MJ Tsai Applied Physics Letters 101 (7), 2012	70	2012
Bipolar resistive switching memory using Cu metallic filament in Ge0. 4Se0. 6 solid electrolyte SZ Rahaman, S Maikap, HC Chiu, CH Lin, TY Wu, YS Chen, PJ Tzeng, ... Electrochemical and Solid-State Letters 13 (5), H159, 2010	63	2010
The role of Ti buffer layer thickness on the resistive switching properties of hafnium oxide-based resistive switching memories SZ Rahaman, YD Lin, HY Lee, YS Chen, PS Chen, WS Chen, CH Hsu, ... Langmuir 33 (19), 4654-4665, 2017	60	2017
Novel Defects-Trapping RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current YS Chen, HY Lee, PS Chen, WS Chen, KH Tsai, PY Gu, TY Wu, CH Tsai, ... IEEE Electron Device Letters 35 (2), 202-204, 2013	59	2013
Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, TC Tien, MJ Tsai Journal of Applied Physics 111 (6), 2012	57	2012
Resistive switching memory characteristics of Ge/GeO_x nanowires and evidence of oxygen ion migration A Prakash, S Maikap, SZ Rahaman, S Majumdar, S Manna, SK Ray Nanoscale research letters 8, 1-10, 2013	51	2013
Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO₃/WO_x/W Structure S Chakrabarti, S Samanta, S Maikap, SZ Rahaman, HM Cheng Nanoscale research letters 11, 1-8, 2016	47	2016
Pulse-width and temperature effect on the switching behavior of an etch-stop-on-MgO-barrier spin-orbit torque MRAM cell SZ Rahaman, IJ Wang, TY Chen, CF Pai, DY Wang, JH Wei, HH Lee, ... IEEE Electron Device Letters 39 (9), 1306-1309, 2018	39	2018
Improved resistive switching memory characteristics using core-shell IrOx nano-dots in Al2O3/WOx bilayer structure W Banerjee, S Maikap, SZ Rahaman, A Prakash, TC Tien, WC Li, ... Journal of The Electrochemical Society 159 (2), H177, 2011	39	2011
Nanoscale (EOT= 5.6 nm) nonvolatile memory characteristics using n-Si/SiO2/HfAlO nanocrystal/Al2O3/Pt capacitors S Maikap, SZ Rahaman, TC Tien Nanotechnology 19 (43), 435202, 2008	39	2008
Understanding of multi-level resistive switching mechanism in GeO_x through redox reaction in H₂O₂/sarcosine prostate cancer biomarker detection S Samanta, SZ Rahaman, A Roy, S Jana, S Chakrabarti, R Panja, S Roy, ... Scientific Reports 7 (1), 11240, 2017	36	2017
Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge_0.5Se_0.5 solid electrolyte SZ Rahaman, S Maikap, A Das, A Prakash, YH Wu, CS Lai, TC Tien, ... Nanoscale Research Letters 7, 1-11, 2012	36	2012
High-κ Al2O3/WOx bilayer dielectrics for low-power resistive switching memory applications W Banerjee, SZ Rahaman, A Prakash, S Maikap Japanese Journal of Applied Physics 50 (10S), 10PH01, 2011	35	2011
Excellent uniformity and multilevel operation in formation-free low power resistive switching memory using IrOx/AlOx/W cross-point W Banerjee, SZ Rahaman, S Maikap Japanese Journal of Applied Physics 51 (4S), 04DD10, 2012	27	2012
Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution SZ Rahaman, HY Lee, YS Chen, YD Lin, PS Chen, WS Chen, PH Wang Applied Physics Letters 110 (21), 2017	20	2017
Retention Model of TaO/HfO_x and TaO/AlO_x RRAM with Self-Rectifying Switch Characteristics YD Lin, PS Chen, HY Lee, YS Chen, SZ Rahaman, KH Tsai, CH Hsu, ... Nanoscale research letters 12, 1-6, 2017	19	2017
Resistance instabilities in a filament-based resistive memory FT Chen, HY Lee, YS Chen, SZ Rahaman, CH Tsai, KH Tsai, TY Wu, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 1.1-5E. 1.7, 2013	17	2013
Bipolar resistive switching memory characteristics using Al/Cu/GeOx/W memristor S Maikap, SZ Rahaman ECS Transactions 45 (6), 257, 2012	17	2012

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