Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons R Rengel, E Pascual, MJ Martín
Applied Physics Letters 104 (23), 233107, 2014
48 2014 Diffusion coefficient, correlation function, and power spectral density of velocity fluctuations in monolayer graphene R Rengel, MJ Martín
Journal of Applied Physics 114 (14), 143702, 2013
45 2013 Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies R Rengel, J Mateos, D Pardo, T González, MJ Martin
Semiconductor science and technology 16 (11), 939, 2001
40 2001 Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm MJ Martín, T González, D Pardo, JE Velázquez
Semiconductor science and technology 11 (3), 380, 1996
30 1996 Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene JM Iglesias, MJ Martín, E Pascual, R Rengel
Applied Physics Letters 108 (4), 043105, 2016
28 2016 Analysis of current fluctuations in silicon pn + and p + n homojunctions MJ Martín, JE Velázquez, D Pardo
Journal of applied physics 79 (9), 6975-6981, 1996
28 1996 Simulation of electron transport in silicon: impact-ionization processes MJ Martin, T Gonzalez, JE Velazquez, D Pardo
Semiconductor science and technology 8 (7), 1291, 1993
26 1993 A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs R Rengel, MJ Martín, T González, J Mateos, D Pardo, G Dambrine, ...
IEEE transactions on electron devices 53 (3), 523-532, 2006
25 2006 Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometre silicon structures E Starikov, P Shiktorov, V Gruzinskis, T González, MJ Martin, D Pardo, ...
Semiconductor science and technology 11 (6), 865, 1996
21 1996 Injected current and quantum transmission coefficient in low Schottky barriers: WKB and Airy approaches R Rengel, E Pascual, MJ Martin
IEEE electron device letters 28 (2), 171-173, 2007
20 2007 Motor conduction velocity and H-reflex in prematures with very short gestational age AC Martinez, MT Ferrer, MJ Martin
Electromyography and clinical neurophysiology 23 (1-2), 13-19, 1983
20 1983 Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor PC Feijoo, F Pasadas, JM Iglesias, MJ Martin, R Rengel, C Li, W Kim, ...
Nanotechnology 28 (48), 485203, 2017
19 2017 Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in MJ Martı́n Martinez, D Pardo, JE Velázquez
Journal of applied physics 84 (9), 5012-5020, 1998
19 1998 Synthesis of α, β-unsaturated spirolactams by intramolecular cyclization of endocyclic N-Acyliminium ions. MJ Martín, F Bermejo
Tetrahedron letters 36 (42), 7705-7708, 1995
19 1995 Degree of implementation of preventive strategies for post-ICU syndrome: Multi-centre, observational study in Spain M Raurell-Torredà, S Arias-Rivera, JD Martí, MJ Frade-Mera, ...
Enfermería Intensiva (English ed.) 30 (2), 59-71, 2019
17 2019 Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research E Pascual, MJ Martín, R Rengel, G Larrieu, E Dubois
Semiconductor science and technology 24 (2), 025022, 2009
17 2009 Electronic transport in laterally asymmetric channel MOSFET for RF analog applications R Rengel, MJ Martin
IEEE transactions on electron devices 57 (10), 2448-2454, 2010
16 2010 Numerical and experimental study of a 0.25 µm fully-depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behaviour R Rengel, J Mateos, D Pardo, T Gonzalez, MJ Martin, G Dambrine, ...
Semiconductor science and technology 17 (11), 1149, 2002
16 2002 RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs MJ Martin, E Pascual, R Rengel
Solid-state electronics 73, 64-73, 2012
15 2012 Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena E Pascual, R Rengel, MJ Martín
Semiconductor science and technology 22 (9), 1003, 2007
15 2007 