Maria Jesus Martin Martinez
Maria Jesus Martin Martinez
Professor of Electronics (University of Salamanca)
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Attention and inhibition in bilingual children: Evidence from the dimensional change card sort task
E Bialystok, MM Martin
Developmental science 7 (3), 325-339, 2004
Developing phonological awareness: Is there a bilingual advantage?
E Bialystok, S Majumder, MM Martin
Applied Psycholinguistics 24 (1), 27-44, 2003
Bilingualism across the lifespan: The rise and fall of inhibitory control
E Bialystok, MM Martin, M Viswanathan
International Journal of Bilingualism 9 (1), 103-119, 2005
Notation to symbol: Development in children’s understanding of print
E Bialystok, MM Martin
Journal of Experimental Child Psychology 86 (3), 223-243, 2003
Target prices for mass production of tyrosine kinase inhibitors for global cancer treatment
A Hill, D Gotham, J Fortunak, J Meldrum, I Erbacher, M Martin, H Shoman, ...
BMJ open 6 (1), 2016
Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons
R Rengel, E Pascual, MJ Martín
Applied Physics Letters 104 (23), 233107, 2014
Diffusion coefficient, correlation function, and power spectral density of velocity fluctuations in monolayer graphene
R Rengel, MJ Martín
Journal of Applied Physics 114 (14), 143702, 2013
Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies
R Rengel, J Mateos, D Pardo, T González, MJ Martin
Semiconductor science and technology 16 (11), 939, 2001
Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm
MJ Martín, T González, D Pardo, JE Velázquez
Semiconductor science and technology 11 (3), 380, 1996
A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs
R Rengel, MJ Martín, T González, J Mateos, D Pardo, G Dambrine, ...
IEEE transactions on electron devices 53 (3), 523-532, 2006
Analysis of current fluctuations in silicon pn+ and p+n homojunctions
MJ Martín, JE Velázquez, D Pardo
Journal of applied physics 79 (9), 6975-6981, 1996
Simulation of electron transport in silicon: impact-ionization processes
MJ Martin, T Gonzalez, JE Velazquez, D Pardo
Semiconductor science and technology 8 (7), 1291, 1993
Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene
JM Iglesias, MJ Martín, E Pascual, R Rengel
Applied Physics Letters 108 (4), 043105, 2016
Injected current and quantum transmission coefficient in low Schottky barriers: WKB and Airy approaches
R Rengel, E Pascual, MJ Martin
IEEE electron device letters 28 (2), 171-173, 2007
Correlation Between Clinical Activity and Serological Markers in a Wide Cohort of Patients with Systemic Lupus Erythematosus
N Villegas-Zambrano, V Martínez‐Taboada, A Bolívar, M Martin, L Alvarez, ...
Annals of the New York Academy of Sciences 1173 (1), 60, 2009
Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in heterojunctions
MJ Martı́n Martinez, D Pardo, JE Velázquez
Journal of applied physics 84 (9), 5012-5020, 1998
Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometre silicon structures
E Starikov, P Shiktorov, V Gruzinskis, T González, MJ Martin, D Pardo, ...
Semiconductor science and technology 11 (6), 865, 1996
Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research
E Pascual, MJ Martín, R Rengel, G Larrieu, E Dubois
Semiconductor science and technology 24 (2), 025022, 2009
Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena
E Pascual, R Rengel, MJ Martín
Semiconductor science and technology 22 (9), 1003, 2007
Numerical and experimental study of a 0.25 µm fully-depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behaviour
R Rengel, J Mateos, D Pardo, T Gonzalez, MJ Martin, G Dambrine, ...
Semiconductor science and technology 17 (11), 1149, 2002
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Artículos 1–20