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RODRIGO GARCIA HERNANSANZ
RODRIGO GARCIA HERNANSANZ
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Title
Cited by
Cited by
Year
Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector
E García Hemme, R García Hernansanz, G González Díaz, J Olea Ariza, ...
American Institute of Physics, 2014
652014
Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer
R García-Hernansanz, E García-Hemme, D Montero, J Olea, A Del Prado, ...
Solar energy materials and solar cells 185, 61-65, 2018
522018
Sub-bandgap spectral photo-response analysis of Ti supersaturated Si
E García-Hemme, R García-Hernansanz, J Olea, D Pastor, A Del Prado, ...
Applied Physics Letters 101 (19), 2012
492012
Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon
D Pastor, J Olea, A Del Prado, E García-Hemme, R García-Hernansanz, ...
Solar Energy Materials and Solar Cells 104, 159-164, 2012
452012
Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon
E García Hemme, R García Hernansanz, G González Díaz, J Olea Ariza, ...
Amer Inst Physics, 2013
382013
Low temperature intermediate band metallic behavior in Ti implanted Si
J Olea, D Pastor, E García-Hemme, R García-Hernansanz, Á del Prado, ...
Thin Solid Films 520 (21), 6614-6618, 2012
252012
Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si
J Olea, D Pastor, Á Del Prado, E García-Hemme, R García-Hernansanz, ...
Journal of Applied Physics 114 (5), 2013
232013
Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap
J Olea, E López, E Antolín, A Martí, A Luque, E García-Hemme, D Pastor, ...
Journal of Physics D: Applied Physics 49 (5), 055103, 2016
202016
Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications
E Pérez, H Castán, H García, S Dueñas, L Bailón, D Montero, ...
Applied Physics Letters 106 (2), 2015
202015
A robust method to determine the contact resistance using the van der Pauw set up
G González-Díaz, D Pastor, E García-Hemme, D Montero, ...
Measurement 98, 151-158, 2017
182017
On the optoelectronic mechanisms ruling Ti‐hyperdoped Si photodiodes
E García‐Hemme, D Caudevilla, S Algaidy, F Pérez‐Zenteno, ...
Advanced Electronic Materials 8 (2), 2100788, 2022
162022
A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications
E Pérez, S Duenas, H Castán, H García, L Bailón, D Montero, ...
Journal of Applied Physics 118 (24), 2015
152015
Electrical decoupling effect on intermediate band Ti-implanted silicon layers
D Pastor, J Olea, A Del Prado, E García-Hemme, R García-Hernansanz, ...
Journal of Physics D: Applied Physics 46 (13), 135108, 2013
152013
Meyer Neldel rule application to silicon supersaturated with transition metals
E García-Hemme, R García-Hernansanz, J Olea, D Pastor, A del Prado, ...
Journal of Physics D: Applied Physics 48 (7), 075102, 2015
142015
Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures
E García-Hemme, D Montero, R García-Hernansanz, J Olea, I Mártil, ...
Journal of Physics D: Applied Physics 49 (27), 275103, 2016
122016
Vanadium supersaturated silicon system: a theoretical and experimental approach
E Garcia-Hemme, G García, P Palacios, D Montero, R García-Hernansanz, ...
Journal of Physics D: Applied Physics 50 (49), 495101, 2017
112017
Strong subbandgap photoconductivity in GaP implanted with Ti
J Olea, A del Prado, E García‐Hemme, R García‐Hernansanz, D Montero, ...
Progress in Photovoltaics: Research and Applications 26 (3), 214-222, 2018
102018
Double ion implantation and pulsed laser melting processes for third generation solar cells
E García Hemme, R García Hernansanz, G González Díaz, J Olea Ariza, ...
Hindawi Publishing Corporation, 2013
82013
Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells
D Caudevilla, E Garcia-Hemme, E San Andres, F Pérez-Zenteno, I Torres, ...
Materials Science in Semiconductor Processing 137, 106189, 2022
62022
Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Material
E García Hemme, R García Hernansanz, G González Díaz, J Olea Ariza, ...
American Institute of Physics, 2012
52012
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