Mireia Bargalló Gonzalez
Mireia Bargalló Gonzalez
Institut de Microelectrònica de Barcelona IMB-CNM (CSIC)
Verified email at csic.es
Title
Cited by
Cited by
Year
Analysis of the Switching Variability in -Based RRAM Devices
MB Gonzalez, JM Rafí, O Beldarrain, M Zabala, F Campabadal
IEEE Transactions on Device and Materials Reliability 14 (2), 769-771, 2014
712014
Simulation of thermal reset transitions in resistive switching memories including quantum effects
MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ...
Journal of Applied Physics 115 (21), 214504, 2014
572014
Nanobeam diffraction: Technique evaluation and strain measurement on complementary metal oxide semiconductor devices
P Favia, MB Gonzales, E Simoen, P Verheyen, D Klenov, H Bender
Journal of The Electrochemical Society 158 (4), H438, 2011
512011
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ...
Solid-State Electronics 111, 47-51, 2015
382015
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...
Journal of Physics D: Applied Physics 50 (33), 335103, 2017
362017
In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
G Gonzalez-Cordero, F Jimenez-Molinos, JB Roldán, MB González, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
362017
A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs
MA Villena, JB Roldán, MB González, P González-Rodelas, ...
Solid-State Electronics 118, 56-60, 2016
282016
High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible pn junctions
E Simoen, G Eneman, MB Gonzalez, D Kobayashi, AL Rodríguez, ...
Journal of The Electrochemical Society 158 (5), R27, 2011
252011
High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible pn junctions
E Simoen, G Eneman, MB Gonzalez, D Kobayashi, AL Rodríguez, ...
Journal of The Electrochemical Society 158 (5), R27, 2011
252011
Is there an impact of threading dislocations on the characteristics of devices fabricated in strained‐Ge substrates?
E Simoen, G Brouwers, R Yang, G Eneman, MB Gonzalez, F Leys, ...
physica status solidi c 6 (8), 1912-1917, 2009
252009
Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis (dimethylamide) and water/ozone: Effects of growth temperature, oxygen source …
H García, H Castán, S Dueñas, L Bailón, F Campabadal, O Beldarrain, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1 …, 2013
232013
2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics
JM Rafí, F Campabadal, H Ohyama, K Takakura, I Tsunoda, M Zabala, ...
Solid-state electronics 79, 65-74, 2013
232013
Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages
M Maestro, J Martin-Martinez, J Diaz, A Crespo-Yepes, MB Gonzalez, ...
Microelectronic Engineering 147, 176-179, 2015
212015
Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant
MB González, JM Rafí, O Beldarrain, M Zabala, F Campabadal
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
202013
Leakage current control in recessed SiGe source/drain junctions
C Claeys, MB Gonzalez, G Eneman, P Verheyen, H Bender, ...
Journal of The Electrochemical Society 154 (9), H814, 2007
202007
Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures
O Beldarrain, M Duch, M Zabala, JM Rafí, MB González, F Campabadal
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1 …, 2013
192013
Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming
S Poblador, MB Gonzalez, F Campabadal
Microelectronic Engineering 187, 148-153, 2018
182018
Low temperature pre-epi treatment: critical parameters to control interface contamination
R Loo, A Hikavyy, FE Leys, M Wada, K Sano, B De Vos, A Pacco, ...
Solid state phenomena 145, 177-180, 2009
182009
Factors influencing the leakage current in embedded SiGe source/drain junctions
E Simoen, MB Gonzalez, B Vissouvanadin, MK Chowdhury, P Verheyen, ...
IEEE transactions on electron devices 55 (3), 925-930, 2008
182008
Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM
S Claramunt, Q Wu, M Maestro, M Porti, MB Gonzalez, J Martin-Martinez, ...
Microelectronic Engineering 147, 335-338, 2015
172015
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