| Analysis of the Switching Variability in -Based RRAM Devices MB Gonzalez, JM Rafí, O Beldarrain, M Zabala, F Campabadal IEEE Transactions on Device and Materials Reliability 14 (2), 769-771, 2014 | 71 | 2014 |
| Simulation of thermal reset transitions in resistive switching memories including quantum effects MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ... Journal of Applied Physics 115 (21), 214504, 2014 | 57 | 2014 |
| Nanobeam diffraction: Technique evaluation and strain measurement on complementary metal oxide semiconductor devices P Favia, MB Gonzales, E Simoen, P Verheyen, D Klenov, H Bender Journal of The Electrochemical Society 158 (4), H438, 2011 | 51 | 2011 |
| An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ... Solid-State Electronics 111, 47-51, 2015 | 38 | 2015 |
| A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ... Journal of Physics D: Applied Physics 50 (33), 335103, 2017 | 36 | 2017 |
| In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures G Gonzalez-Cordero, F Jimenez-Molinos, JB Roldán, MB González, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017 | 36 | 2017 |
| A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs MA Villena, JB Roldán, MB González, P González-Rodelas, ... Solid-State Electronics 118, 56-60, 2016 | 28 | 2016 |
| High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible pn junctions E Simoen, G Eneman, MB Gonzalez, D Kobayashi, AL Rodríguez, ... Journal of The Electrochemical Society 158 (5), R27, 2011 | 25 | 2011 |
| High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible pn junctions E Simoen, G Eneman, MB Gonzalez, D Kobayashi, AL Rodríguez, ... Journal of The Electrochemical Society 158 (5), R27, 2011 | 25 | 2011 |
| Is there an impact of threading dislocations on the characteristics of devices fabricated in strained‐Ge substrates? E Simoen, G Brouwers, R Yang, G Eneman, MB Gonzalez, F Leys, ... physica status solidi c 6 (8), 1912-1917, 2009 | 25 | 2009 |
| Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis (dimethylamide) and water/ozone: Effects of growth temperature, oxygen source … H García, H Castán, S Dueñas, L Bailón, F Campabadal, O Beldarrain, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1 …, 2013 | 23 | 2013 |
| 2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics JM Rafí, F Campabadal, H Ohyama, K Takakura, I Tsunoda, M Zabala, ... Solid-state electronics 79, 65-74, 2013 | 23 | 2013 |
| Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages M Maestro, J Martin-Martinez, J Diaz, A Crespo-Yepes, MB Gonzalez, ... Microelectronic Engineering 147, 176-179, 2015 | 21 | 2015 |
| Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant MB González, JM Rafí, O Beldarrain, M Zabala, F Campabadal Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013 | 20 | 2013 |
| Leakage current control in recessed SiGe source/drain junctions C Claeys, MB Gonzalez, G Eneman, P Verheyen, H Bender, ... Journal of The Electrochemical Society 154 (9), H814, 2007 | 20 | 2007 |
| Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures O Beldarrain, M Duch, M Zabala, JM Rafí, MB González, F Campabadal Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (1 …, 2013 | 19 | 2013 |
| Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming S Poblador, MB Gonzalez, F Campabadal Microelectronic Engineering 187, 148-153, 2018 | 18 | 2018 |
| Low temperature pre-epi treatment: critical parameters to control interface contamination R Loo, A Hikavyy, FE Leys, M Wada, K Sano, B De Vos, A Pacco, ... Solid state phenomena 145, 177-180, 2009 | 18 | 2009 |
| Factors influencing the leakage current in embedded SiGe source/drain junctions E Simoen, MB Gonzalez, B Vissouvanadin, MK Chowdhury, P Verheyen, ... IEEE transactions on electron devices 55 (3), 925-930, 2008 | 18 | 2008 |
| Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM S Claramunt, Q Wu, M Maestro, M Porti, MB Gonzalez, J Martin-Martinez, ... Microelectronic Engineering 147, 335-338, 2015 | 17 | 2015 |
