Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
201 2021 Variability in resistive memories JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ...
Advanced Intelligent Systems 5 (6), 2200338, 2023
111 2023 Analysis of the Switching Variability in MB Gonzalez, JM Rafí, O Beldarrain, M Zabala, F Campabadal
IEEE Transactions on Device and Materials Reliability 14 (2), 769-771, 2014
101 2014 Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ...
Journal of Physics D: Applied Physics 53 (22), 225106, 2020
91 2020 A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...
Journal of Physics D: Applied Physics 50 (33), 335103, 2017
78 2017 Simulation of thermal reset transitions in resistive switching memories including quantum effects MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ...
Journal of Applied Physics 115 (21), 2014
77 2014 Nanobeam diffraction: Technique evaluation and strain measurement on complementary metal oxide semiconductor devices P Favia, MB Gonzales, E Simoen, P Verheyen, D Klenov, H Bender
Journal of The Electrochemical Society 158 (4), H438, 2011
66 2011 An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ...
Solid-State Electronics 111, 47-51, 2015
57 2015 Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming S Poblador, MB Gonzalez, F Campabadal
Microelectronic Engineering 187, 148-153, 2018
56 2018 In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures G Gonzalez-Cordero, F Jimenez-Molinos, JB Roldán, MB González, ...
Journal of Vacuum Science & Technology B 35 (1), 2017
54 2017 Semiempirical modeling of reset transitions in unipolar resistive-switching based memristors R Picos, JB Roldan, MMA Chawa, P Garcia-Fernandez, ...
arXiv preprint arXiv:1702.01533, 2017
48 2017 A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs MA Villena, JB Roldán, MB González, P González-Rodelas, ...
Solid-State Electronics 118, 56-60, 2016
38 2016 A physically based model for resistive memories including a detailed temperature and variability description G González-Cordero, MB González, H García, F Campabadal, S Dueñas, ...
Microelectronic Engineering 178, 26-29, 2017
37 2017 Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation M Maestro-Izquierdo, MB Gonzalez, F Jimenez-Molinos, E Moreno, ...
Nanotechnology 31 (13), 135202, 2020
36 2020 Unpredictable bits generation based on RRAM parallel configuration D Arumí, Á Gómez-Pau, S Manich, R Rodríguez-Montañés, MB González, ...
IEEE Electron Device Letters 40 (2), 341-344, 2018
36 2018 Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories D Maldonado, F Aguirre, G González-Cordero, AM Roldán, MB González, ...
Journal of Applied Physics 130 (5), 2021
35 2021 Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2 /n+ -Si RRAM Devices A Rodriguez-Fernandez, S Aldana, F Campabadal, J Sune, E Miranda, ...
IEEE Transactions on Electron Devices 64 (8), 3159-3166, 2017
35 2017 Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2 -Based RRAM MB Gonzalez, J Martin-Martinez, M Maestro, MC Acero, M Nafria, ...
IEEE Transactions on Electron Devices 63 (8), 3116-3122, 2016
33 2016 Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis (dimethylamide) and water/ozone: Effects of growth temperature, oxygen source … H García, H Castán, S Duenas, L Bailón, F Campabadal, O Beldarrain, ...
Journal of Vacuum Science & Technology A 31 (1), 2013
33 2013 Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM S Claramunt, Q Wu, M Maestro, M Porti, MB Gonzalez, J Martin-Martinez, ...
Microelectronic Engineering 147, 335-338, 2015
32 2015 