| The Bi-mode Insulated Gate Transistor (BiGT) A potential technology for higher power applications M Rahimo, A Kopta, U Schlapbach, J Vobecky, R Schnell, S Klaka 2009 21st International Symposium on Power Semiconductor Devices & IC's, 283-286, 2009 | 143 | 2009 |
| Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low-and high-energy electrons P Hazdra, J Vobecký, H Dorschner, K Brand Microelectronics Journal 35 (3), 249-257, 2004 | 86 | 2004 |
| Optimization of power diode characteristics by means of ion irradiation J Vobecky, P Hazdra, J Homola IEEE Transactions on Electron Devices 43 (12), 2283-2289, 1996 | 86 | 1996 |
| A high current 3300V module employing reverse conducting IGBTs setting a new benchmark in output power capability M Rahimo, U Schlapbach, A Kopta, J Vobecky, D Schneider, ... 2008 20th International Symposium on Power Semiconductor Devices and IC's, 68-71, 2008 | 83 | 2008 |
| Recent advancements in IGCT technologies for high power electronics applications U Vemulapati, M Rahimo, M Arnold, T Wikström, J Vobecky, B Backlund, ... 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 63 | 2015 |
| Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques P Hazdra, J Vobecký, K Brand Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 60 | 2002 |
| Accurate simulation of fast ion irradiated power devices P Hazdra, J Vobecký Solid-State Electronics 37 (1), 127-134, 1994 | 51 | 1994 |
| Exploring the silicon design limits of thin wafer IGBT technology: The controlled punch through (CPT) IGBT J Vobecky, M Rahimo, A Kopta, S Linder 2008 20th International Symposium on Power Semiconductor Devices and IC's, 76-79, 2008 | 47 | 2008 |
| Elektronika: součástky a obvody, principy a příklady J Vobecký, V Záhlava Grada Publishing, spol. sro, 2001 | 43 | 2001 |
| Point defects in 4H–SiC epilayers introduced by neutron irradiation P Hazdra, V Zahlava, J Vobecký Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014 | 37 | 2014 |
| ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation J Vobecký, P Hazdra, V Záhlava, A Mihaila, M Berthou Solid-State Electronics 94, 32-38, 2014 | 36 | 2014 |
| Divacancy profiles in MeV helium irradiated silicon from reverse I–V measurement P Hazdra, J Rubeš, J Vobecký Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999 | 36 | 1999 |
| Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV P Hazdra, J Vobecký physica status solidi (a) 216 (17), 1900312, 2019 | 35 | 2019 |
| Impact of electron irradiation on the ON-state characteristics of a 4H–SiC JBS diode J Vobecký, P Hazdra, S Popelka, RK Sharma IEEE Transactions on Electron Devices 62 (6), 1964-1969, 2015 | 35 | 2015 |
| High-power PiN diode with the local lifetime control based on the proximity gettering of platinum J Vobecky, P Hazdra IEEE Electron Device Letters 23 (7), 392-394, 2002 | 34 | 2002 |
| Realization of higher output power capability with the bi-mode insulated gate transistor (BIGT) M Rahimo, U Schlapbach, R Schnell, A Kopta, J Vobecky, A Baschnagel 2009 13th European Conference on Power Electronics and Applications, 1-10, 2009 | 32 | 2009 |
| A new degree of freedom in diode optimization: arbitrary axial lifetime profiles by means of ion irradiation P Hazdra, J Vobecky, N Galster, O Humbel, T Dalibor 12th International Symposium on Power Semiconductor Devices & ICs …, 2000 | 32 | 2000 |
| The destruction mechanism in GCTs N Lophitis, M Antoniou, F Udrea, FD Bauer, I Nistor, M Arnold, T Wikstrom, ... IEEE transactions on electron devices 60 (2), 819-826, 2013 | 30 | 2013 |
| Field Shielded Anode (FSA) concept enabling higher temperature operation of fast recovery diodes S Matthias, J Vobecky, C Corvasce, A Kopta, M Cammarata 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011 | 29 | 2011 |
| Local lifetime control by light ion irradiation: impact on blocking capability of power P–i–N diode P Hazdra, K Brand, J Rubeš, J Vobecký Microelectronics journal 32 (5-6), 449-456, 2001 | 29 | 2001 |
