| Semiconductor device and method of manufacturing the same K Sakuma, H Kusai, S Fujii, L Zhang, M Kiyotoshi, M Shingu US Patent 8,710,580, 2014 | 384 | 2014 |
| Low-power linear computation using nonlinear ferroelectric tunnel junction memristors R Berdan, T Marukame, K Ota, M Yamaguchi, M Saitoh, S Fujii, J Deguchi, ... Nature Electronics 3 (5), 259-266, 2020 | 152 | 2020 |
| First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property S Fujii, Y Kamimuta, T Ino, Y Nakasaki, R Takaishi, M Saitoh 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 125 | 2016 |
| Nonvolatile resistance change device H Kusai, S Fujii, Y Nakasaki US Patent 8,450,709, 2013 | 54 | 2013 |
| Self-assembled mixed monolayer containing ferrocenylthiol molecules: STM observations and electrochemical investigations S Fujii, S Kurokawa, K Murase, KH Lee, A Sakai, H Sugimura Electrochimica acta 52 (13), 4436-4442, 2007 | 42 | 2007 |
| Semiconductor device and manufacturing method thereof T Ino, M Shingu, S Fujii, A Takashima, D Matsushita, J Fujiki, N Yasuda, ... US Patent 8,569,823, 2013 | 29 | 2013 |
| HfO2-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications M Saitoh, R Ichihara, M Yamaguchi, K Suzuki, K Takano, K Akari, ... 2020 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2020 | 28 | 2020 |
| Next-generation ultrahigh-density 3-D vertical resistive switching memory (VRSM)—Part II: Design guidelines for device, array, and architecture Z Jiang, S Qin, H Li, S Fujii, D Lee, S Wong, HSP Wong IEEE Transactions on Electron Devices 66 (12), 5147-5154, 2019 | 28 | 2019 |
| In-memory reinforcement learning with moderately-stochastic conductance switching of ferroelectric tunnel junctions R Berdan, T Marukame, S Kabuyanagi, K Ota, M Saitoh, S Fujii, J Deguchi, ... 2019 Symposium on VLSI Technology, T22-T23, 2019 | 28 | 2019 |
| Non-volatile memory device T Ino, S Fujii US Patent 9,779,797, 2017 | 28 | 2017 |
| Scaling the CBRAM switching layer diameter to 30 nm improves cycling endurance S Fujii, JAC Incorvia, F Yuan, S Qin, F Hui, Y Shi, Y Chai, M Lanza, ... IEEE Electron Device Letters 39 (1), 23-26, 2017 | 26 | 2017 |
| Non-volatile resistive random access memory device T Kawashima, S Fujii US Patent App. 14/750,192, 2016 | 24 | 2016 |
| Memory device M Saitoh, T Ishikawa, S Fujii, K Nishihara US Patent 9,190,454, 2015 | 23 | 2015 |
| Resistance random access memory device H Miyagawa, S Fujii, T Ishikawa US Patent 9,099,645, 2015 | 23 | 2015 |
| Semiconductor device, manufacturing method for semiconductor device, and ferroelectric layer T Ino, S Fujii, S Inumiya US Patent 10,096,619, 2018 | 22 | 2018 |
| Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions K Ota, M Yamaguchi, R Berdan, T Marukame, Y Nishi, K Matsuo, ... 2019 IEEE International Electron Devices Meeting (IEDM), 6.2. 1-6.2. 4, 2019 | 20 | 2019 |
| Next-generation ultrahigh-density 3-D vertical resistive switching memory (VRSM)—Part I: Accurate and computationally efficient modeling S Qin, Z Jiang, H Li, S Fujii, D Lee, SS Wong, HSP Wong IEEE Transactions on Electron Devices 66 (12), 5139-5146, 2019 | 20 | 2019 |
| Nonvolatile semiconductor memory device and method of manufacturing the same H Kusai, K Sakuma, M Shingu, S Fujii, M Kiyotoshi US Patent 9,117,848, 2015 | 20 | 2015 |
| Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory M Yamaguchi, S Fujii, Y Kamimuta, S Kabuyanagi, T Ino, Y Nakasaki, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 2-1-6D. 2-6, 2018 | 19 | 2018 |
| Storage device Y Kamimuta, S Fujii, M Saitoh US Patent 9,761,798, 2017 | 18 | 2017 |
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