elisa vianello
elisa vianello
Scientist, CEA Leti
Dirección de correo verificada de cea.fr
TítuloCitado porAño
Bio-inspired stochastic computing using binary CBRAM synapses
M Suri, D Querlioz, O Bichler, G Palma, E Vianello, D Vuillaume, ...
IEEE Transactions on Electron Devices 60 (7), 2402-2409, 2013
1702013
Prototype ATLAS IBL modules using the FE-I4A front-end readout chip
Atlas Ibl Collaboration
Journal of Instrumentation 7 (11), P11010, 2012
1642012
CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications
M Suri, O Bichler, D Querlioz, G Palma, E Vianello, D Vuillaume, ...
2012 International Electron Devices Meeting, 10.3. 1-10.3. 4, 2012
1302012
3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade
C Da Via, M Boscardin, GF Dalla Betta, G Darbo, C Fleta, C Gemme, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2012
1092012
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ...
IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015
1082015
Resistive memories for ultra-low-power embedded computing design
E Vianello, O Thomas, G Molas, O Turkyilmaz, N Jovanović, D Garbin, ...
2014 IEEE International Electron Devices Meeting, 6.3. 1-6.3. 4, 2014
782014
Variability-tolerant convolutional neural network for pattern recognition applications based on OxRAM synapses
D Garbin, O Bichler, E Vianello, Q Rafhay, C Gamrat, L Perniola, ...
2014 IEEE International Electron Devices Meeting, 28.4. 1-28.4. 4, 2014
622014
Development of double-sided full-passing-column 3D sensors at FBK
G Giacomini, A Bagolini, M Boscardin, GF Dalla Betta, F Mattedi, M Povoli, ...
IEEE Transactions on Nuclear Science 60 (3), 2357-2366, 2013
572013
Slim edges in double-sided silicon 3D detectors
M Povoli, A Bagolini, M Boscardin, GF Dalla Betta, G Giacomini, ...
Journal of Instrumentation 7 (01), C01015, 2012
562012
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells
A Arreghini, F Driussi, E Vianello, D Esseni, MJ van Duuren, ...
IEEE Transactions on Electron Devices 55 (5), 1211-1219, 2008
542008
Experimental and simulation analysis of program/retention transients in silicon nitride-based NVM cells
E Vianello, F Driussi, A Arreghini, P Palestri, D Esseni, L Selmi, N Akil, ...
IEEE transactions on electron devices 56 (9), 1980-1990, 2009
472009
HfO2-Based RRAM: Electrode Effects, Ti/HfO2Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment andAb InitioCalculations
B Traoré, P Blaise, E Vianello, L Perniola, B De Salvo, Y Nishi
IEEE Transactions on Electron Devices 63 (1), 360-368, 2015
462015
Grain boundary composition and conduction in : An ab initio study
KH Xue, P Blaise, LRC Fonseca, G Molas, E Vianello, B Traoré, ...
Applied Physics Letters 102 (20), 201908, 2013
462013
Reliability of charge trapping memories with high-k control dielectrics
G Molas, M Bocquet, E Vianello, L Perniola, H Grampeix, JP Colonna, ...
Microelectronic Engineering 86 (7-9), 1796-1803, 2009
442009
Sb-doped GeS2as performance and reliability booster in Conductive Bridge RAM
E Vianello, G Molas, F Longnos, P Blaise, E Souchier, C Cagli, G Palma, ...
2012 International Electron Devices Meeting, 31.5. 1-31.5. 4, 2012
432012
A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Resistive Random Access Memory
KH Xue, B Traore, P Blaise, LRC Fonseca, E Vianello, G Molas, ...
IEEE Transactions on Electron Devices 61 (5), 1394-1402, 2014
422014
Automatic intermittent aerosol dispensing valve
TH Petterson, T Jaworski, DJ Houser, MG Knickerbocker
US Patent 6,588,627, 2003
39*2003
28nm advanced CMOS resistive RAM solution as embedded non-volatile memory
A Benoist, S Blonkowski, S Jeannot, S Denorme, J Damiens, J Berger, ...
2014 IEEE International Reliability Physics Symposium, 2E. 6.1-2E. 6.5, 2014
382014
Explanation of the charge trapping properties of silicon nitride storage layers for NVMs—Part II: Atomistic and electrical modeling
E Vianello, F Driussi, P Blaise, P Palestri, D Esseni, L Perniola, G Molas, ...
IEEE transactions on electron devices 58 (8), 2490-2499, 2011
382011
On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying
B Traoré, P Blaise, E Vianello, H Grampeix, S Jeannot, L Perniola, ...
IEEE Transactions on Electron Devices 62 (12), 4029-4036, 2015
372015
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