Blanca Biel
Blanca Biel
Dpto. Física Atómica, Molecular y Nuclear, Universidad de Granada
Dirección de correo verificada de ugr.es - Página principal
TítuloCitado porAño
Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime
C Gómez-Navarro, PJ De Pablo, J Gómez-Herrero, B Biel, ...
Nature materials 4 (7), 534, 2005
3912005
Charge transport in disordered graphene-based low dimensional materials
A Cresti, N Nemec, B Biel, G Niebler, F Triozon, G Cuniberti, S Roche
Nano Research 1 (5), 361-394, 2008
2972008
Anomalous doping effects on charge transport in graphene nanoribbons
B Biel, X Blase, F Triozon, S Roche
Physical review letters 102 (9), 096803, 2009
2812009
Transport length scales in disordered graphene-based materials: strong localization regimes and dimensionality effects
A Lherbier, B Biel, YM Niquet, S Roche
Physical review letters 100 (3), 036803, 2008
1812008
Chemically induced mobility gaps in graphene nanoribbons: a route for upscaling device performances
B Biel, F Triozon, X Blase, S Roche
Nano letters 9 (7), 2725-2729, 2009
892009
Anderson localization in carbon nanotubes: defect density and temperature effects
B Biel, FJ Garcia-Vidal, A Rubio, F Flores
Physical review letters 95 (26), 266801, 2005
892005
Schottky contacts on passivated GaAs (1 0 0) surfaces: barrier height and reactivity
T Kampen, A Schüller, DRT Zahn, B Biel, J Ortega, R Pérez, F Flores
Applied surface science 234 (1-4), 341-348, 2004
822004
Quantum transport in graphene nanoribbons: Effects of edge reconstruction and chemical reactivity
SMM Dubois, A Lopez-Bezanilla, A Cresti, F Triozon, B Biel, JC Charlier, ...
ACS nano 4 (4), 1971-1976, 2010
692010
Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics
P Marconcini, A Cresti, F Triozon, G Fiori, B Biel, YM Niquet, M Macucci, ...
ACS nano 6 (9), 7942-7947, 2012
602012
Ab initio study of transport properties in defected carbon nanotubes: an O (N) approach
B Biel, FJ Garcia-Vidal, A Rubio, F Flores
Journal of Physics: Condensed Matter 20 (29), 294214, 2008
382008
B. Biel, X. Blase, F. Triozon, and S. Roche, Phys. Rev. Lett. 102, 096803 (2009).
B Biel
Phys. Rev. Lett. 102, 096803, 2009
332009
Anderson localization regime in carbon nanotubes: size dependent properties
F Flores, B Biel, A Rubio, FJ Garcia-Vidal, C Gomez-Navarro, P de Pablo, ...
Journal of Physics: Condensed Matter 20 (30), 304211, 2008
302008
Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy
C González, B Biel, YJ Dappe
Nanotechnology 27 (10), 105702, 2016
292016
Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
C Sampedro, F Gámiz, A Godoy, R Valín, A García-Loureiro, N Rodríguez, ...
Solid-State Electronics 65, 88-93, 2011
222011
Versatile synthesis and enlargement of functionalized distorted heptagon-containing nanographenes
IR Márquez, N Fuentes, CM Cruz, V Puente-Muñoz, L Sotorrios, ...
Chemical science 8 (2), 1068-1074, 2017
212017
Surface roughness scattering model for arbitrarily oriented silicon nanowires
IM Tienda-Luna, FG Ruiz, A Godoy, B Biel, F Gámiz
Journal of Applied Physics 110 (8), 084514, 2011
202011
Adsorption of small inorganic molecules on a defective MoS 2 monolayer
C González, B Biel, YJ Dappe
Physical Chemistry Chemical Physics 19 (14), 9485-9499, 2017
152017
Nano Res. 1, 361 (2008)
A Cresti, N Nemec, B Biel, G Niebler, F Triozon, G Cuniberti, S Roche
Google Scholar Crossref, CAS, 2008
152008
Operation and design of van der Waals tunnel transistors: A 3-D quantum transport study
J Cao, D Logoteta, S Özkaya, B Biel, A Cresti, MG Pala, D Esseni
IEEE Transactions on Electron Devices 63 (11), 4388-4394, 2016
142016
Influence of orientation, geometry, and strain on electron distribution in silicon gate-all-around (GAA) MOSFETs
IM Tienda-Luna, FJG Ruiz, A Godoy, B Biel, F Gamiz
IEEE Transactions on Electron Devices 58 (10), 3350-3357, 2011
132011
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Artículos 1–20