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So-Yeon Kim
So-Yeon Kim
Instituto de Tecnología Química. Universitat Politècnica de València
Verified email at itq.upv.es
Title
Cited by
Cited by
Year
Perovskite-related (CH 3 NH 3) 3 Sb 2 Br 9 for forming-free memristor and low-energy-consuming neuromorphic computing
JM Yang, ES Choi, SY Kim, JH Kim, JH Park, NG Park
Nanoscale 11 (13), 6453-6461, 2019
1392019
Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory
SY Kim, JM Yang, ES Choi, NG Park
Advanced Functional Materials, 2002653, 2020
952020
Efficient surface passivation of perovskite films by a post-treatment method with a minimal dose
DH Kang, SY Kim, JW Lee, NG Park
Journal of Materials Chemistry A 9 (6), 3441-3450, 2021
752021
Effect of interlayer spacing in layered perovskites on resistive switching memory
SY Kim, JM Yang, ES Choi, NG Park
Nanoscale 11 (30), 14330-14338, 2019
452019
Synthetic Powder-Based Thin (<0.1 μm) Cs3Bi2Br9 Perovskite Films for Air-Stable and Viable Resistive Switching Memory
SY Kim, DA Park, NG Park
ACS Applied Electronic Materials 4 (5), 2388-2395, 2022
282022
Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption
JM Yang, YK Jung, JH Lee, YC Kim, SY Kim, S Seo, DA Park, JH Kim, ...
Nanoscale Horizons 6 (12), 987-997, 2021
262021
A layered (n-C 4 H 9 NH 3) 2 CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio
SY Kim, JM Yang, SH Lee, NG Park
Nanoscale 13 (29), 12475-12483, 2021
262021
High-performing laminated perovskite solar cells by surface engineering of perovskite films
OY Gong, MK Seo, JH Choi, SY Kim, DH Kim, IS Cho, NG Park, GS Han, ...
Applied Surface Science 591, 153148, 2022
162022
Mixed‐Dimensional Formamidinium Bismuth Iodides Featuring In‐Situ Formed Type‐I Band Structure for Convolution Neural Networks
JM Yang, JH Lee, YK Jung, SY Kim, JH Kim, SG Kim, JH Kim, S Seo, ...
Advanced Science 9 (14), 2200168, 2022
162022
The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties
ES Choi, JM Yang, SG Kim, C Cuhadar, SY Kim, SH Kim, D Lee, NG Park
Nanoscale 11 (30), 14455-14464, 2019
162019
Intact metal/metal halide van der Waals junction enables reliable memristive switching with high endurance
JH Lee, JM Yang, SY Kim, S Baek, S Lee, SJ Lee, NG Park, JW Lee
Advanced Functional Materials 33 (14), 2214142, 2023
62023
Artificial Synapse Based on a δ-FAPbI3/Atomic-Layer-Deposited SnO2 Bilayer Memristor
SU Lee, SY Kim, JH Lee, JH Baek, JW Lee, HW Jang, NG Park
Nano Letters, 2024
52024
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