Angle-resolved photoelectron-spectroscopy study of the Si (001) 2× 1-K surface Y Enta, T Kinoshita, S Suzuki, S Kono
Physical Review B 36 (18), 9801, 1987
177 1987 Angle-resolved-photoemission study of the electronic structure of the Si (001) c (4× 2) surface Y Enta, S Suzuki, S Kono
Physical review letters 65 (21), 2704, 1990
136 1990 Electronic structure of the single-domain Si (001) 21-K surface Y Enta, S Suzuki, S Kono, T Sakamoto
Physical Review B 39 (8), 5524, 1989
128 1989 Surface and bulk core-level shifts of the Si (111)√ 3√ 3-Ag surface: Evidence for a charged√ 3√ 3 layer S Kono, K Higashiyama, T Kinoshita, T Miyahara, H Kato, H Ohsawa, ...
Physical review letters 58 (15), 1555, 1987
107 1987 Low energy electron diffraction and X-ray photoelectron spectroscopy studies of the formation of submonolayer interfaces of Sb/Si (111) CY Park, T Abukawa, T Kinoshita, Y Enta, S Kono
Japanese journal of applied physics 27 (1R), 147, 1988
106 1988 Initial Oxidation of Si(100)- as an Autocatalytic Reaction M Suemitsu, Y Enta, Y Miyanishi, N Miyamoto
Physical review letters 82 (11), 2334, 1999
80 1999 Angle-resolved photoemission studies of clean and adsorbed Si (001) surfaces: 2× 1, c (4× 2), 2× 1-Na and 2× 2-Ga Y Enta, S Suzuki, S Kono
Surface science 242 (1-3), 277-283, 1991
59 1991 Controls over structural and electronic properties of epitaxial graphene on silicon using surface termination of 3C-SiC (111)/Si H Fukidome, S Abe, R Takahashi, K Imaizumi, S Inomata, H Handa, ...
Applied physics express 4 (11), 115104, 2011
57 2011 Precise control of epitaxy of graphene by microfabricating SiC substrate H Fukidome, Y Kawai, F Fromm, M Kotsugi, H Handa, T Ide, T Ohkouchi, ...
Applied Physics Letters 101 (4), 2012
51 2012 Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications H Fukidome, R Takahashi, S Abe, K Imaizumi, H Handa, HC Kang, ...
Journal of Materials Chemistry 21 (43), 17242-17248, 2011
50 2011 Real-time observation of the dry oxidation of the Si (100) surface with ambient pressure x-ray photoelectron spectroscopy Y Enta, BS Mun, M Rossi, PN Ross, Z Hussain, CS Fadley, KS Lee, ...
Applied Physics Letters 92 (1), 2008
50 2008 Growth kinetics of thermal oxidation process on Si (100) by real time ultraviolet photoelectron spectroscopy Y Enta, Y Takegawa, M Suemitsu, N Miyamoto
Applied surface science 100, 449-453, 1996
48 1996 Photoelectron and inverse photoelectron spectroscopy studies of the Si (111) 3× 3-Sb surface T Kinoshita, Y Enta, H Ohta, Y Yaegashi, S Suzuki, S Kono
Surface science 204 (3), 405-414, 1988
42 1988 Empty-and Filled-Electronic States of the Si (111)\sqrt3×\sqrt3-Sn,\sqrt3×\sqrt3-In and 2\sqrt3× 2\sqrt3-Sn Surfaces T Kinoshita, H Ohta, Y Enta, Y Yaegashi, S Suzuki, S Kono
Journal of the Physical Society of Japan 56 (11), 4015-4021, 1987
41 1987 Empty-and Filled-Electronic States of the Si (111)\sqrt3×\sqrt3-Sn,\sqrt3×\sqrt3-In and 2\sqrt3× 2\sqrt3-Sn Surfaces T Kinoshita, H Ohta, Y Enta, Y Yaegashi, S Suzuki, S Kono
Journal of the Physical Society of Japan 56 (11), 4015-4021, 1987
41 1987 Empty-and Filled-Electronic States of the Si (111)\sqrt3×\sqrt3-Sn,\sqrt3×\sqrt3-In and 2\sqrt3× 2\sqrt3-Sn Surfaces T Kinoshita, H Ohta, Y Enta, Y Yaegashi, S Suzuki, S Kono
Journal of the Physical Society of Japan 56 (11), 4015-4021, 1987
41 1987 Angle-resolved photoemission study of a single-domain Si (001) 2× 1-K surface with synchrotron radiation: symmetry and dispersion of surface-states T Abukawa, T Kashiwakura, T Okane, Y Sasaki, H Takahashi, Y Enta, ...
Surface science 261 (1-3), 217-223, 1992
40 1992 Structure, chemical bonding and these thermal stabilities of diamond-like carbon (DLC) films by RF magnetron sputtering H Nakazawa, T Mikami, Y Enta, M Suemitsu, M Mashita
Japanese journal of applied physics 42 (6B), L676, 2003
38 2003 Real-time measurements of Si 2 p core level during dry oxidation of Si (100) Y Enta, Y Miyanishi, H Irimachi, M Niwano, M Suemitsu, N Miyamoto, ...
Physical Review B 57 (11), 6294, 1998
36 1998 Photoemission study of the negative electron affinity surfaces of O/Cs/Si (001) 2× 1 and O/K/Si (001) 2× 1 T Abukawa, Y Enta, T Kashiwakura, S Suzuki, S Kono, T Sakamoto
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (4 …, 1990
35 1990