Per-Erik Hellström
Title
Cited by
Cited by
Year
Oxidation of silicon–germanium alloys. II. A mathematical model
PE Hellberg, SL Zhang, FM dHeurle, CS Petersson
Journal of applied physics 82 (11), 5779-5787, 1997
114*1997
Oxidation of silicon–germanium alloys. I. An experimental study
PE Hellberg, SL Zhang, FM d’Heurle, CS Petersson
Journal of applied physics 82 (11), 5773-5778, 1997
911997
Work function of boron-doped polycrystalline Si/sub x/Ge/sub 1-x/films
PE Hellberg, SL Zhang, CS Petersson
IEEE Electron Device Letters 18 (9), 456-458, 1997
791997
SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation
Z Zhang, Z Qiu, PE HellstrÖmHellstrom, G Malm, J Olsson, J Lu, ...
IEEE electron device letters 29 (1), 125-127, 2007
472007
1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/pMOSFETs
M von Haartman, AC Lindgren, PE Hellstrom, BG Malm, SL Zhang, ...
IEEE Transactions on Electron Devices 50 (12), 2513-2519, 2003
432003
Oxidation of silicon–germanium alloys. II. A mathematical model
PE Hellberg, SL Zhang, FM d’Heurle, CS Petersson
Journal of applied physics 82 (11), 5779-5787, 1997
411997
Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator
J Seger, PE Hellström, J Lu, BG Malm, M von Haartman, M Östling, ...
Applied Physics Letters 86 (25), 253507, 2005
402005
Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals
JV Grahn, PE Hellberg, E Olsson
Journal of applied physics 84 (3), 1632-1642, 1998
391998
A novel strained Si0. 7Ge0. 3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack
D Wu, AC Lindgren, S Persson, G Sjoblom, M von Haartman, J Seger, ...
IEEE Electron Device Letters 24 (3), 171-173, 2003
382003
A robust spacer gate process for deca-nanometer high-frequency MOSFETs
J Hållstedt, PE Hellström, Z Zhang, BG Malm, J Edholm, J Lu, SL Zhang, ...
Microelectronic Engineering 83 (3), 434-439, 2006
362006
Characterization of transfer-bonded silicon bolometer arrays
F Niklaus, J Pejnefors, M Dainese, M Haggblad, PE Hellstrom, ...
Infrared Technology and Applications XXX 5406, 521-530, 2004
352004
Boron‐Doped Polycrystalline Si x Ge1− x Films: Dopant Activation and Solid Solubility
PE Hellberg, A Gagnor, SL Zhang, CS Petersson
Journal of the Electrochemical Society 144 (11), 3968, 1997
351997
Strained Si/SiGe MOS technology: Improving gate dielectric integrity
SH Olsen, L Yan, R Agaiby, E Escobedo-Cousin, AG O’Neill, ...
Microelectronic Engineering 86 (3), 218-223, 2009
342009
Reduced self-heating by strained silicon substrate engineering
A O’Neill, R Agaiby, S Olsen, Y Yang, PE Hellstrom, M Ostling, M Oehme, ...
Applied surface science 254 (19), 6182-6185, 2008
322008
Effects of carbon on Schottky barrier heights of NiSi modified by dopant segregation
J Luo, ZJ Qiu, DW Zhang, PE Hellstrom, M Ostling, SL Zhang
IEEE electron device letters 30 (6), 608-610, 2009
312009
Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs
J Hållstedt, PE Hellström, HH Radamson
Thin Solid Films 517 (1), 117-120, 2008
302008
Electrically robust ultralong nanowires of NiSi, , and
Z Zhang, PE Hellström, M Östling, SL Zhang, J Lu
Applied physics letters 88 (4), 043104, 2006
302006
Thulium silicate interfacial layer for scalable high-k/metal gate stacks
ED Litta, PE Hellström, C Henkel, M Östling
IEEE transactions on electron devices 60 (10), 3271-3276, 2013
262013
Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
L Donetti, F Gámiz, S Thomas, TE Whall, DR Leadley, PE Hellström, ...
Journal of Applied Physics 110 (6), 063711, 2011
252011
Low-frequency noise and Coulomb scattering in Si0. 8Ge0. 2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics
M von Haartman, J Westlinder, D Wu, BG Malm, PE Hellström, J Olsson, ...
Solid-state electronics 49 (6), 907-914, 2005
242005
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