Weisheng Zhao
Weisheng Zhao
Fert Beijing Institute, Beihang University
Dirección de correo verificada de buaa.edu.cn - Página principal
Citado por
Citado por
High speed, high stability and low power sensing amplifier for MTJ/CMOS hybrid logic circuits
W Zhao, C Chappert, V Javerliac, JP Noziere
IEEE Transactions on Magnetics 45 (10), 3784-3787, 2009
Compact modeling of perpendicular-anisotropy CoFeB/MgO magnetic tunnel junctions
Y Zhang, W Zhao, Y Lakys, JO Klein, JV Kim, D Ravelosona, C Chappert
IEEE Transactions on Electron Devices 59 (3), 819-826, 2012
Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures
N Lei, T Devolder, G Agnus, P Aubert, L Daniel, JV Kim, W Zhao, ...
Nature communications 4 (1), 1-7, 2013
Spin-transfer torque magnetic memory as a stochastic memristive synapse for neuromorphic systems
AF Vincent, J Larroque, N Locatelli, NB Romdhane, O Bichler, C Gamrat, ...
IEEE transactions on biomedical circuits and systems 9 (2), 166-174, 2015
Skyrmion-electronics: An overview and outlook
W Kang, Y Huang, X Zhang, Y Zhou, W Zhao
Proceedings of the IEEE 104 (10), 2040-2061, 2016
Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
X Zhang, Y Zhou, M Ezawa, GP Zhao, W Zhao
Scientific reports 5, 11369, 2015
Failure and reliability analysis of STT-MRAM
WS Zhao, Y Zhang, T Devolder, JO Klein, D Ravelosona, C Chappert, ...
Microelectronics Reliability 52 (9-10), 1848-1852, 2012
Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit
W Zhao, E Belhaire, C Chappert, P Mazoyer
ACM Transactions on Embedded Computing Systems (TECS) 9 (2), 14, 2009
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
M Wang, W Cai, K Cao, J Zhou, J Wrona, S Peng, H Yang, J Wei, W Kang, ...
Nature communications 9 (1), 1-7, 2018
New non‐volatile logic based on spin‐MTJ
W Zhao, E Belhaire, C Chappert, F Jacquet, P Mazoyer
physica status solidi (a) 205 (6), 1373-1377, 2008
Macro-model of spin-transfer torque based magnetic tunnel junction device for hybrid magnetic-CMOS design
W Zhao, E Belhaire, Q Mistral, C Chappert, V Javerliac, B Dieny, E Nicolle
2006 IEEE International Behavioral Modeling and Simulation Workshop, 40-43, 2006
Ultrahigh density memristor neural crossbar for on-chip supervised learning
D Chabi, Z Wang, C Bennett, JO Klein, W Zhao
IEEE Transactions on Nanotechnology 14 (6), 954-962, 2015
Reconfigurable codesign of STT-MRAM under process variations in deeply scaled technology
W Kang, L Zhang, JO Klein, Y Zhang, D Ravelosona, W Zhao
IEEE Transactions on Electron Devices 62 (6), 1769-1777, 2015
Magnetic skyrmion-based synaptic devices
Y Huang, W Kang, X Zhang, Y Zhou, W Zhao
Nanotechnology 28 (8), 08LT02, 2017
Voltage controlled magnetic skyrmion motion for racetrack memory
W Kang, Y Huang, C Zheng, W Lv, N Lei, Y Zhang, X Zhang, Y Zhou, ...
Scientific reports 6, 23164, 2016
Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque
Z Wang, W Zhao, E Deng, JO Klein, C Chappert
Journal of Physics D: Applied Physics 48 (6), 065001, 2015
Perpendicular-magnetic-anisotropy CoFeB racetrack memory
Y Zhang, WS Zhao, D Ravelosona, JO Klein, JV Kim, C Chappert
Journal of Applied Physics 111 (9), 093925, 2012
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures
S Peng, M Wang, H Yang, L Zeng, J Nan, J Zhou, Y Zhang, A Hallal, ...
Scientific reports 5, 18173, 2015
Low power magnetic full-adder based on spin transfer torque MRAM
E Deng, Y Zhang, JO Klein, D Ravelsona, C Chappert, W Zhao
IEEE transactions on magnetics 49 (9), 4982-4987, 2013
Two‐Terminal Carbon Nanotube Programmable Devices for Adaptive Architectures
G Agnus, W Zhao, V Derycke, A Filoramo, Y Lhuillier, S Lenfant, ...
Advanced Materials 22 (6), 702-706, 2010
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