Determination of bulk states and interface states distributions in polycrystalline silicon thin‐film transistors CA Dimitriadis, DH Tassis, NA Economou, AJ Lowe
Journal of applied physics 74 (4), 2919-2924, 1993
90 1993 Compact model of drain current in short-channel triple-gate FinFETs N Fasarakis, A Tsormpatzoglou, DH Tassis, I Pappas, K Papathanasiou, ...
IEEE transactions on electron devices 59 (7), 1891-1898, 2012
66 2012 A compact drain current model of short-channel cylindrical gate-all-around MOSFETs A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ...
Semiconductor science and technology 24 (7), 075017, 2009
66 2009 On the threshold voltage and channel conductance of polycrystalline silicon thin‐film transistors CA Dimitriadis, DH Tassis
Journal of applied physics 79 (8), 4431-4437, 1996
61 1996 Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ...
Microelectronic Engineering 87 (9), 1764-1768, 2010
54 2010 Analytical unified threshold voltage model of short-channel FinFETs and implementation N Fasarakis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, ...
Solid-state electronics 64 (1), 34-41, 2011
48 2011 Characteristics of Schottky diodes deposited by reactive magnetron sputtering CA Dimitriadis, JI Lee, P Patsalas, S Logothetidis, DH Tassis, J Brini, ...
Journal of applied physics 85 (8), 4238-4242, 1999
48 1999 Effect of localized interface charge on the threshold voltage of short-channel undoped symmetrical double-gate MOSFETs EG Ioannidis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ...
IEEE transactions on Electron Devices 58 (2), 433-440, 2010
47 2010 Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise EG Ioannidis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, F Templier, ...
Journal of Applied Physics 108 (10), 2010
47 2010 Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films DH Tassis, CL Mitsas, TT Zorba, CA Dimitriadis, O Valassiades, ...
Journal of applied physics 80 (2), 962-968, 1996
47 1996 Compact modeling of nanoscale trapezoidal FinFETs N Fasarakis, TA Karatsori, A Tsormpatzoglou, DH Tassis, ...
IEEE Transactions on Electron Devices 61 (2), 324-332, 2013
44 2013 Analytical modeling of threshold voltage and interface ideality factor of nanoscale ultrathin body and buried oxide SOI MOSFETs with back gate control N Fasarakis, T Karatsori, DH Tassis, CG Theodorou, F Andrieu, O Faynot, ...
IEEE Transactions on Electron Devices 61 (4), 969-975, 2014
43 2014 Analytical drain current compact model in the depletion operation region of short-channel triple-gate junctionless transistors TA Oproglidis, A Tsormpatzoglou, DH Tassis, TA Karatsori, S Barraud, ...
IEEE Transactions on Electron Devices 64 (1), 66-72, 2016
33 2016 On-state drain current modeling of large-grain poly-Si TFTs based on carrier transport through latitudinal and longitudinal grain boundaries AT Hatzopoulos, DH Tassis, NA Hastas, CA Dimitriadis, G Kamarinos
IEEE transactions on electron devices 52 (8), 1727-1733, 2005
33 2005 The Meyer–Neldel rule in the conductivity of polycrystalline semiconducting films DH Tassis, CA Dimitriadis, O Valassiades
Journal of applied physics 84 (5), 2960-2962, 1998
33 1998 Output characteristics of short‐channel polycrystalline silicon thin‐film transistors CA Dimitriadis, DH Tassis
Journal of applied physics 77 (5), 2177-2183, 1995
33 1995 Symmetrical unified compact model of short-channel double-gate MOSFETs K Papathanasiou, CG Theodorou, A Tsormpatzoglou, DH Tassis, ...
Solid-state electronics 69, 55-61, 2012
31 2012 An analytical hot-carrier induced degradation model in polysilicon TFTs AT Hatzopoulos, DH Tassis, NA Hastas, CA Dimitriadis, G Kamarinos
IEEE transactions on electron devices 52 (10), 2182-2187, 2005
29 2005 Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, N Collaert, ...
Solid-state electronics 57 (1), 31-34, 2011
25 2011 Deep levels in silicon Schottky junctions with embedded arrays of β‐FeSi2 nanocrystallites A Tsormpatzoglou, DH Tassis, CA Dimitriadis, L Dózsa, NG Galkin, ...
Journal of applied physics 100 (7), 2006
25 2006