Marco A. Villena
Title
Cited by
Cited by
Year
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
1982019
Simulation of thermal reset transitions in resistive switching memories including quantum effects
MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ...
Journal of Applied Physics 115 (21), 214504, 2014
572014
An in-depth simulation study of thermal reset transitions in resistive switching memories
MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ...
Journal of Applied Physics 114 (14), 144505, 2013
562013
Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching
N Xiao, MA Villena, B Yuan, S Chen, B Wang, M Eliáš, Y Shi, F Hui, X Jing, ...
Advanced Functional Materials 27 (33), 1700384, 2017
482017
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ...
Solid-State Electronics 111, 47-51, 2015
382015
A SPICE compact model for unipolar RRAM reset process analysis
F Jiménez-Molinos, MA Villena, JB Roldán, AM Roldán
IEEE Transactions on Electron Devices 62 (3), 955-962, 2015
372015
: a physical model for RRAM devices simulation
MA Villena, JB Roldán, F Jiménez-Molinos, E Miranda, J Suñé, M Lanza
JOURNAL OF COMPUTATIONAL ELECTRONICS 16 (4), 1095-1120, 2017
352017
A comprehensive analysis on progressive reset transitions in RRAMs
MA Villena, JB Roldán, F Jimenez-Molinos, J Suñé, S Long, E Miranda, ...
Journal of Physics D: Applied Physics 47 (20), 205102, 2014
322014
Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices
C Pan, E Miranda, MA Villena, N Xiao, X Jing, X Xie, T Wu, F Hui, Y Shi, ...
2D Materials 4 (2), 025099, 2017
302017
A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs
MA Villena, JB Roldán, MB González, P González-Rodelas, ...
Solid-State Electronics 118, 56-60, 2016
282016
Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices
F Hui, MA Villena, W Fang, AY Lu, J Kong, Y Shi, X Jing, K Zhu, M Lanza
2D Materials 5 (3), 031011, 2018
272018
Dielectric breakdown in chemical vapor deposited hexagonal boron nitride
L Jiang, Y Shi, F Hui, K Tang, Q Wu, C Pan, X Jing, H Uppal, F Palumbo, ...
ACS applied materials & interfaces 9 (45), 39758-39770, 2017
272017
Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets
F Hui, W Fang, WS Leong, T Kpulun, H Wang, HY Yang, MA Villena, ...
ACS applied materials & interfaces 9 (46), 39895-39900, 2017
182017
Exploring ReRAM-based memristors in the charge-flux domain, a modeling approach
R Picos, JB Roldan, MM Al Chawa, F Jimenez-Molinos, MA Villena, ...
2015 International Conference on Memristive Systems (MEMRISYS), 1-2, 2015
142015
Exploring resistive switching‐based memristors in the charge–flux domain: A modeling approach
MM Al Chawa, R Picos, JB Roldan, F Jimenez‐Molinos, MA Villena, ...
International Journal of Circuit Theory and Applications 46 (1), 29-38, 2018
122018
Graphene–boron nitride–graphene cross-point memristors with three stable resistive states
K Zhu, X Liang, B Yuan, MA Villena, C Wen, T Wang, S Chen, F Hui, Y Shi, ...
ACS applied materials & interfaces 11 (41), 37999-38005, 2019
92019
Bimodal dielectric breakdown in electronic devices using chemical vapor deposited hexagonal boron nitride as dielectric
F Palumbo, X Liang, B Yuan, Y Shi, F Hui, MA Villena, M Lanza
Advanced Electronic Materials 4 (3), 1700506, 2018
82018
Experimental observation and mitigation of dielectric screening in hexagonal boron nitride based resistive switching devices
B Wang, N Xiao, C Pan, Y Shi, F Hui, X Jing, K Zhu, B Guo, MA Villena, ...
Crystal Research and Technology 53 (4), 1800006, 2018
62018
Fabrication of 3D silica with outstanding organic molecule separation and self-cleaning performance
P Liu, H Yu, F Hui, MA Villena, X Li, M Lanza, Z Zhang
Applied Surface Science 511, 145537, 2020
52020
Equivalent circuit model for the electron transport in 2D resistive switching material systems
E Miranda, J Suñé, C Pan, M Villena, N Xiao, M Lanza
2017 47th European Solid-State Device Research Conference (ESSDERC), 86-89, 2017
52017
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