Follow
Joel Jacquet
Joel Jacquet
Professor, Director of Research at EIGSI Engineering School La rochelle & Casablanca
Verified email at eigsi.fr - Homepage
Title
Cited by
Cited by
Year
Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL
J Boucart, C Starck, F Gaborit, A Plais, N Bouche, E Derouin, JC Remy, ...
IEEE Journal of selected topics in quantum electronics 5 (3), 520-529, 1999
1581999
1-mW CW-RT monolithic VCSEL at 1.55 μm
J Boucart, C Starck, F Gaborit, A Plais, N Bouche, E Derouin, L Goldstein, ...
IEEE Photonics Technology Letters 11 (6), 629-631, 1999
1281999
High Power Tunable Dilute Mode DFB Laser with Low RIN and Narrow Linewidth
M Faugeron, M Tran, O Parillaud, M Chtioui, Y Robert, E Vinet, A Enard, ...
IEEE Photonics Technology Letters 25 (2), 7 - 9, 2013
812013
GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs
L Goldstein, C Fortin, C Starck, A Plais, J Jacquet, J Boucart, A Rocher, ...
Electronics Letters 34 (3), 268-270, 1998
791998
Surface emitting semiconductor laser
F Brillouet, J Jacquet, P Salet, L Goldstein, P Garabedian, C Starck, ...
US Patent 6,052,398, 2000
652000
Process for fabricating a semiconductor opto-electronic component and component and matrix of components fabricated by this process
L Goldstein, F Brillouet, C Fortin, J Jacquet, P Salet, JL Lafragette, A Plais
US Patent 6,046,065, 2000
642000
Optical wavelength converters
KE Stubkjaer, T Durhuus, B Mikkelsen, C Joergensen, RJ Pedersen, ...
Proc. ECOC'94 2, 635-642, 1994
611994
High-Power, Low RIN 1.55-Directly Modulated DFB Lasers for Analog Signal Transmission
M Faugeron, M Tran, F Lelarge, M Chtioui, Y Robert, E Vinet, A Enard, ...
IEEE Photonics Technology Letters 24 (2), 116-118, 2011
592011
High peak power, narrow RF linewidth asymmetrical cladding quantum-dash mode-locked lasers
M Faugeron, F Lelarge, M Tran, Y Robert, E Vinet, A Enard, J Jacquet, ...
IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1101008-1101008, 2013
462013
Three-electrode DFB wavelength tunable FSK transmitter at 1.53 mu m
D Leclerc, J Jacquet, D Sigogne, C Labourie, Y Louis, C Artigue, J Benoit
Electronics Letters 1 (25), 45-47, 1989
461989
Room temperature continuous-wave laser operation of electrically-pumped 1.55µm VECSEL
SB M. EL KURDI, A BOUSSEKSOU, I SAGNES, A PLAIS, M STRASSNER, ...
Electronics Letters 40 (11), 2004
452004
Bragg section effects on linewidth and lineshape in 1.55-μm DBR tunable laser diodes
P Signoret, M Myara, JP Tourrenc, B Orsal, MH Monier, J Jacquet, ...
IEEE Photonics Technology Letters 16 (6), 1429-1431, 2004
422004
3.6-MHz linewidth 1.55-μm monomode vertical-cavity surface-emitting laser
P Signoret, F Marin, S Viciani, G Belleville, M Myara, JP Tourrenc, B Orsal, ...
IEEE Photonics Technology Letters 13 (4), 269-271, 2001
352001
DBR module with 20-mW constant coupled output power, over 16 nm (40 x 50-GHz spaced channels)
H Debrégeas-Sillard, A Vuong, F Delorme, J David, V Allard, A Bodéré, ...
IEEE Photonics Technology Letters 13 (1), 4-6, 2001
352001
30° C CW operation of 1.52 µm InGaAsP/AlGaAs vertical cavity lasers with in situ built-in lateral current confinement by localised fusion
AV Syrbu, VP Iakovlev, CA Berseth, O Dehaese, A Rudra, E Kapon, ...
Electronics Letters 34 (18), 1744-1745, 1998
321998
High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 µm surface emitting lasers
F Genty, G Almuneau, L Chusseau, G Boissier, JP Malzac, P Salet, ...
Electronics Letters 33 (2), 140-142, 1997
301997
Widely Vernier tunable external cavity laser including a sampled fiber Bragg grating with digital wavelength selection
A Bergonzo, J Jacquet, D De Gaudemaris, J Landreau, A Plais, A Vuong, ...
IEEE Photonics Technology Letters 15 (8), 1144-1146, 2003
292003
Modeling of optical low coherence reflectometry recorded Bragg reflectograms: evidence to a decisive role of Bragg spectral selectivity
Y Gottesman, EVK Rao, H Sillard, J Jacquet
Journal of lightwave technology 20 (3), 489, 2002
292002
Method of fabricating a surface emitting semiconductor laser
F Brillouet, L Goldstein, J Jacquet, A Plais, P Salet
US Patent 5,747,366, 1998
291998
Tunable semiconductor laser
P Brosson, J Jacquet, C Artigue, D Leclerc, J Benoit
US Patent 4,920,542, 1990
291990
The system can't perform the operation now. Try again later.
Articles 1–20