Highly aligned epitaxial nanorods with a checkerboard pattern in oxide films S Park, Y Horibe, T Asada, LS Wielunski, N Lee, PL Bonanno, ...
Nano letters 8 (2), 720-724, 2008
56 2008 Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth WH Goh, G Patriarche, PL Bonanno, S Gautier, T Moudakir, M Abid, ...
Journal of Crystal Growth 315 (1), 160-163, 2011
43 2011 Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template S Sundaram, R Puybaret, Y El Gmili, X Li, PL Bonanno, K Pantzas, ...
Journal of Applied Physics 116 (16), 2014
25 2014 High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography NA Mahadik, MJ Tadjer, PL Bonanno, KD Hobart, RE Stahlbush, ...
APL Materials 7 (2), 2019
23 2019 Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si (111) templates S Sundaram, Y El Gmili, R Puybaret, X Li, PL Bonanno, K Pantzas, ...
Applied Physics Letters 107 (11), 2015
20 2015 High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping A Soltani, M Rousseau, JC Gerbedoen, M Mattalah, PL Bonanno, A Telia, ...
Applied Physics Letters 104 (23), 2014
20 2014 Intrafacet migration effects in InGaN∕ GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction PL Bonanno, SM O’Malley, AA Sirenko, A Kazimirov, ZH Cai, T Wunderer, ...
Applied Physics Letters 92 (12), 2008
17 2008 Epitaxial checkerboard arrangement of nanorods in SM O’Malley, PL Bonanno, KH Ahn, AA Sirenko, A Kazimirov, M Tanimura, ...
Physical Review B 78 (16), 165424, 2008
8 2008 Evolution of lattice distortions in 4H-SiC wafers with varying doping NA Mahadik, H Das, S Stoupin, RE Stahlbush, PL Bonanno, X Xu, ...
Scientific Reports 10 (1), 10845, 2020
7 2020 Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures PL Bonanno, S Gautier, AA Sirenko, A Kazimirov, ZH Cai, WH Goh, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2010
7 2010 APL Mater. 7, 022513 (2019) NA Mahadik, MJ Tadjer, PL Bonanno, KD Hobart, RE Stahlbush, ...
6 Defects in 4H-SiC epilayers affecting device yield and reliability R Stahlbush, N Mahadik, P Bonanno, J Soto, B Odekirk, W Sung, ...
2022 IEEE International Reliability Physics Symposium (IRPS), P65-1-P65-6, 2022
5 2022 Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si (111) and GaN templates S Sundaram, X Li, Y El Gmili, PL Bonanno, R Puybaret, C Pradalier, ...
Nanotechnology 27 (11), 115602, 2016
5 2016 Mask effect in nano-selective-area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si (111) substrates Y El Gmili, PL Bonanno, S Sundaram, X Li, R Puybaret, G Patriarche, ...
Optical Materials Express 7 (2), 376-385, 2017
3 2017 Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction PL Bonanno, S Gautier, YE Gmili, T Moudakir, AA Sirenko, A Kazimirov, ...
Thin solid films 541, 46-50, 2013
3 2013 Evaluating Compositional Variation in InGaAs Random Alloys Using Atom Probe Tomography NA Kotulak, ME Twigg, NA Mahadik, S Tomasulo, PL Bonanno, ...
Microscopy and Microanalysis 24 (S1), 398-399, 2018
2 2018 X‐ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi‐facet GaN ridges SM O'Malley, PL Bonanno, T Wunderer, P Brückner, B Neubert, F Scholz, ...
physica status solidi c 5 (6), 1655-1658, 2008
2 2008 Selective growth of GaN Nanostructures on SiC by MOVPE and their strain relaxation study by submicron beam x-ray diffraction WH Goh, PL Bonanno, J Martin, S Gautier, N Maloufi, AA Sirenko, ...
EW MOVPE 2009, 1-1, 2009
1 2009 High-resolution dislocation imaging and micro-structural analysis of HVPE-Ga NA Mahadik, MJ Tadjer, PL Bonanno
2018 Nano-selective-area growth of group III-nitrides on silicon and conventional substrates PL Bonanno
Georgia Institute of Technology, 2016
2016 
Andrei SirenkoDepartment of Physics, New Jersey Institute of TechnologyDirección de correo verificada de njit.edu
