Photoluminescence of GaAs/AlGaAs quantum ring arrays YD Sibirmovskii, IS Vasil’evskii, AN Vinichenko, IS Eremin, DM Zhigunov, ... Semiconductors 49, 638-643, 2015 | 29 | 2015 |
Experimental evaluation of stable long term operation of semiconductor magnetic sensors at ITER relevant environment I Bolshakova, S Belyaev, M Bulavin, V Brudnyi, V Chekanov, V Coccorese, ... Nuclear Fusion 55 (8), 083006, 2015 | 27 | 2015 |
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode IS Vasil’evskii, SS Pushkarev, MM Grekhov, AN Vinichenko, DV Lavrukhin, ... Semiconductors 50, 559-565, 2016 | 14 | 2016 |
An advanced approach to control the electro-optical properties of LT-GaAs-based terahertz photoconductive antenna AM Buryakov, MS Ivanov, SA Nomoev, DI Khusyainov, ED Mishina, ... Materials Research Bulletin 122, 110688, 2020 | 10 | 2020 |
Suppression of the metal-insulator transition in magnetron sputtered Ti2O3 films PV Shvets, D Caffrey, K Fleischer, I Shvets, K O'Neill, GS Duesberg, ... Thin Solid Films 694, 137642, 2020 | 10 | 2020 |
Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit DA Safonov, AN Klochkov, AN Vinichenko, YD Sibirmovsky, NI Kargin, ... Physica E: Low-Dimensional Systems and Nanostructures 133, 114787, 2021 | 9 | 2021 |
New structure for photoconductive antennas based on {LTG-GaAs/GaAs: Si} superlattice on GaAs (111) a substrate GB Galiev, IN Trunkin, AL Vasiliev, IS Vasil’evskii, AN Vinichenko, ... Crystallography Reports 64, 205-211, 2019 | 9 | 2019 |
Electron transport in PHEMT AlGaAs/InGaAs/GaAs quantum wells at different temperatures: influence of one-side δ-Si doping DA Safonov, AN Vinichenko, NI Kargin, IS Vasil’evskii Semiconductors 52, 189-194, 2018 | 8 | 2018 |
Технология и электронные свойства PHEMT-квантовых ям AlGaAs/Iny (z) Ga1− y (z) As/GaAs с переменным профилем состава ИС Васильевский, АН Виниченко, ММ Грехов, ВП Гладков, НИ Каргин, ... Физика и техника полупроводников 48 (9), 1258, 2014 | 8 | 2014 |
Увеличение подвижности электронов в НЕМТ гетероструктурах с составным спейсером, содержащим нанослои AlAs АН Виниченко, ВП Гладков, НИ Каргин, МН Стриханов, ... Физика и техника полупроводников 48 (12), 1660-1665, 2014 | 7 | 2014 |
The influence of the annealing regime on the properties of terahertz antennas based on low-temperature-grown gallium arsenide SA Nomoev, IS Vasil’evskii, AN Vinichenko, KI Kozlovskii, AA Chistyakov, ... Technical Physics Letters 44, 44-46, 2018 | 6 | 2018 |
Особенности диагностики метаморфных наногетероструктур InAlAs/InGaAs/InAlAs методом высокоразрешающей рентгеновской дифрактометрии в режиме ω-сканирования ИС Васильевский, СС Пушкарев, ММ Грехов, АН Виниченко, ... Физика и техника полупроводников 50 (4), 567-573, 2016 | 6 | 2016 |
Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers AN Vinichenko, VP Gladkov, NI Kargin, MN Strikhanov, IS Vasil’evskii Semiconductors 48, 1619-1625, 2014 | 6 | 2014 |
THz radiation of photoconductive antennas based on {LT-GaAa/GaAa: Si} superlattice structures AN Klochkov, EA Klimov, PM Solyankin, MR Konnikova, IS Vasil’evskii, ... Optics and Spectroscopy 128, 1010-1017, 2020 | 5 | 2020 |
Investigation of semiconducting materials for magnetic field sensors in strong magnetic fields under cryogenic temperatures I Vasil’evskii, A Vinichenko, M Strikhanov, N Kargin, T Kuech, K Rogacki, ... IOP Conference Series: Materials Science and Engineering 475 (1), 012015, 2019 | 5 | 2019 |
Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures SV Gudina, YG Arapov, EI Ilchenko, VN Neverov, AP Savelyev, ... Semiconductors 52, 1551-1558, 2018 | 5 | 2018 |
Temperature dependence of photoluminescence of GaAs/AlGaAs quantum rings YD Sibirmovsky, IS Vasil'Evskii, AN Vinichenko, IS Eremin, OS Kolentsova, ... Journal of Physics: Conference Series 643 (1), 012073, 2015 | 5 | 2015 |
Особенности формирования ансамблей квантовых колец GaAs/AlGaAs и InGaAs/AlGaAs методом капельной эпитаксии ИС Васильевский, АН Виниченко, ИС Еремин, ДМ Жигунов, НИ Каргин, ... Вестник Национального исследовательского ядерного университета МИФИ 2 (3 …, 2013 | 5 | 2013 |
Новая структура для фотопроводящих антенн на основе сверхрешетки {LTG-GaAs/GaAs: Si} на подложке GaAs (111) A ГБ Галиев, ИН Трунькин, АЛ Васильев, ИС Васильевский, ... Кристаллография 64 (2), 184-191, 2019 | 4 | 2019 |
Transport in short-period GaAs/AlAs superlattices with electric domains IV Altukhov, SE Dizhur, MS Kagan, NA Khvalkovskiy, SK Paprotskiy, ... Semiconductors 52, 473-477, 2018 | 4 | 2018 |