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Виниченко А.Н.
Виниченко А.Н.
НИЯУ МИФИ
Verified email at mephi.ru
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Cited by
Year
Photoluminescence of GaAs/AlGaAs quantum ring arrays
YD Sibirmovskii, IS Vasil’evskii, AN Vinichenko, IS Eremin, DM Zhigunov, ...
Semiconductors 49, 638-643, 2015
292015
Experimental evaluation of stable long term operation of semiconductor magnetic sensors at ITER relevant environment
I Bolshakova, S Belyaev, M Bulavin, V Brudnyi, V Chekanov, V Coccorese, ...
Nuclear Fusion 55 (8), 083006, 2015
272015
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode
IS Vasil’evskii, SS Pushkarev, MM Grekhov, AN Vinichenko, DV Lavrukhin, ...
Semiconductors 50, 559-565, 2016
142016
An advanced approach to control the electro-optical properties of LT-GaAs-based terahertz photoconductive antenna
AM Buryakov, MS Ivanov, SA Nomoev, DI Khusyainov, ED Mishina, ...
Materials Research Bulletin 122, 110688, 2020
102020
Suppression of the metal-insulator transition in magnetron sputtered Ti2O3 films
PV Shvets, D Caffrey, K Fleischer, I Shvets, K O'Neill, GS Duesberg, ...
Thin Solid Films 694, 137642, 2020
102020
Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit
DA Safonov, AN Klochkov, AN Vinichenko, YD Sibirmovsky, NI Kargin, ...
Physica E: Low-Dimensional Systems and Nanostructures 133, 114787, 2021
92021
New structure for photoconductive antennas based on {LTG-GaAs/GaAs: Si} superlattice on GaAs (111) a substrate
GB Galiev, IN Trunkin, AL Vasiliev, IS Vasil’evskii, AN Vinichenko, ...
Crystallography Reports 64, 205-211, 2019
92019
Electron transport in PHEMT AlGaAs/InGaAs/GaAs quantum wells at different temperatures: influence of one-side δ-Si doping
DA Safonov, AN Vinichenko, NI Kargin, IS Vasil’evskii
Semiconductors 52, 189-194, 2018
82018
Технология и электронные свойства PHEMT-квантовых ям AlGaAs/Iny (z) Ga1− y (z) As/GaAs с переменным профилем состава
ИС Васильевский, АН Виниченко, ММ Грехов, ВП Гладков, НИ Каргин, ...
Физика и техника полупроводников 48 (9), 1258, 2014
82014
Увеличение подвижности электронов в НЕМТ гетероструктурах с составным спейсером, содержащим нанослои AlAs
АН Виниченко, ВП Гладков, НИ Каргин, МН Стриханов, ...
Физика и техника полупроводников 48 (12), 1660-1665, 2014
72014
The influence of the annealing regime on the properties of terahertz antennas based on low-temperature-grown gallium arsenide
SA Nomoev, IS Vasil’evskii, AN Vinichenko, KI Kozlovskii, AA Chistyakov, ...
Technical Physics Letters 44, 44-46, 2018
62018
Особенности диагностики метаморфных наногетероструктур InAlAs/InGaAs/InAlAs методом высокоразрешающей рентгеновской дифрактометрии в режиме ω-сканирования
ИС Васильевский, СС Пушкарев, ММ Грехов, АН Виниченко, ...
Физика и техника полупроводников 50 (4), 567-573, 2016
62016
Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers
AN Vinichenko, VP Gladkov, NI Kargin, MN Strikhanov, IS Vasil’evskii
Semiconductors 48, 1619-1625, 2014
62014
THz radiation of photoconductive antennas based on {LT-GaAa/GaAa: Si} superlattice structures
AN Klochkov, EA Klimov, PM Solyankin, MR Konnikova, IS Vasil’evskii, ...
Optics and Spectroscopy 128, 1010-1017, 2020
52020
Investigation of semiconducting materials for magnetic field sensors in strong magnetic fields under cryogenic temperatures
I Vasil’evskii, A Vinichenko, M Strikhanov, N Kargin, T Kuech, K Rogacki, ...
IOP Conference Series: Materials Science and Engineering 475 (1), 012015, 2019
52019
Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures
SV Gudina, YG Arapov, EI Ilchenko, VN Neverov, AP Savelyev, ...
Semiconductors 52, 1551-1558, 2018
52018
Temperature dependence of photoluminescence of GaAs/AlGaAs quantum rings
YD Sibirmovsky, IS Vasil'Evskii, AN Vinichenko, IS Eremin, OS Kolentsova, ...
Journal of Physics: Conference Series 643 (1), 012073, 2015
52015
Особенности формирования ансамблей квантовых колец GaAs/AlGaAs и InGaAs/AlGaAs методом капельной эпитаксии
ИС Васильевский, АН Виниченко, ИС Еремин, ДМ Жигунов, НИ Каргин, ...
Вестник Национального исследовательского ядерного университета МИФИ 2 (3 …, 2013
52013
Новая структура для фотопроводящих антенн на основе сверхрешетки {LTG-GaAs/GaAs: Si} на подложке GaAs (111) A
ГБ Галиев, ИН Трунькин, АЛ Васильев, ИС Васильевский, ...
Кристаллография 64 (2), 184-191, 2019
42019
Transport in short-period GaAs/AlAs superlattices with electric domains
IV Altukhov, SE Dizhur, MS Kagan, NA Khvalkovskiy, SK Paprotskiy, ...
Semiconductors 52, 473-477, 2018
42018
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