Enrico Bellotti
Enrico Bellotti
Boston University Georgia Institute of Technology
Dirección de correo verificada de bu.edu
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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
M Farahmand, C Garetto, E Bellotti, KF Brennan, M Goano, E Ghillino, ...
IEEE Transactions on electron devices 48 (3), 535-542, 2001
4032001
Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
IH Oğuzman, E Bellotti, KF Brennan, J Kolnı́k, R Wang, PP Ruden
Journal of Applied Physics 81 (12), 7827-7834, 1997
2111997
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
2072018
Ensemble Monte Carlo study of electron transport in wurtzite InN
E Bellotti, BK Doshi, KF Brennan, JD Albrecht, PP Ruden
Journal of Applied Physics 85 (2), 916-923, 1999
2031999
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
M Goano, E Bellotti, E Ghillino, G Ghione, KF Brennan
Journal of Applied Physics 88 (11), 6467-6475, 2000
1452000
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys and
M Goano, E Bellotti, E Ghillino, C Garetto, G Ghione, KF Brennan
Journal of Applied Physics 88 (11), 6476-6482, 2000
1122000
Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures
E Bellotti, K Driscoll, TD Moustakas, R Paiella
Applied Physics Letters 92 (10), 101112, 2008
1002008
Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors
E Bellotti, K Driscoll, TD Moustakas, R Paiella
Journal of Applied Physics 105 (11), 113103, 2009
942009
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
F Bertazzi, M Moresco, E Bellotti
Journal of Applied Physics 106 (6), 063718, 2009
922009
A numerical study of Auger recombination in bulk InGaN
F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 97 (23), 231118, 2010
892010
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations
M Goano, F Bertazzi, M Penna, E Bellotti
Journal of Applied Physics 102 (8), 083709, 2007
892007
Numerical analysis of HgCdTe simultaneous two-color photovoltaic infrared detectors
E Bellotti, D D'Orsogna
IEEE Journal of Quantum Electronics 42 (4), 418-426, 2006
862006
Numerical analysis of indirect Auger transitions in InGaN
F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 101 (1), 011111, 2012
802012
Method and system to allow performance of permitted activity with respect to a device
L Paatero
US Patent App. 10/090,426, 2003
642003
Alloy scattering in AlGaN and InGaN: A numerical study
E Bellotti, F Bertazzi, M Goano
Journal of applied physics 101 (12), 123706, 2007
622007
Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC
E Bellotti, HE Nilsson, KF Brennan, PP Ruden, R Trew
Journal of Applied Physics 87 (8), 3864-3871, 2000
592000
On the feasibility of p-type Ga2O3
A Kyrtsos, M Matsubara, E Bellotti
Applied Physics Letters 112 (3), 032108, 2018
582018
Monte Carlo study of high-field carrier transport in -SiC including band-to-band tunneling
M Hjelm, HE Nilsson, A Martinez, KF Brennan, E Bellotti
Journal of applied physics 93 (2), 1099-1107, 2003
512003
Materials theory based modeling of wide band gap semiconductors: from basic properties to devices
KF Brennan, E Bellotti, M Farahmand, J Haralson II, PP Ruden, ...
Solid-State Electronics 44 (2), 195-204, 2000
512000
Hydrodynamic transport parameters of wurtzite ZnO from analytic-and full-band Monte Carlo simulation
E Furno, F Bertazzi, M Goano, G Ghione, E Bellotti
Solid-state electronics 52 (11), 1796-1801, 2008
502008
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Artículos 1–20