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Andrei I. Titov (Титов АИ)
Andrei I. Titov (Титов АИ)
Peter the Great St.Petersburg Polytechnic University (SPbPU), Department of Physical Electronics
Dirección de correo verificada de rphf.spbstu.ru
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Effect of ion species on the accumulation of ion-beam damage in GaN
SO Kucheyev, JS Williams, C Jagadish, J Zou, G Li, AI Titov
Physical Review B 64 (3), 035202, 2001
1282001
Energy spike effects in ion-bombarded GaN
SO Kucheyev, AY Azarov, AI Titov, PA Karaseov, TM Kuchumova
Journal of Physics D: Applied Physics 42 (8), 085309, 2009
502009
Effect of the density of collision cascades on ion implantation damage in ZnO
AY Azarov, SO Kucheyev, AI Titov, PA Karaseov
Journal of Applied Physics 102 (8), 2007
492007
Defect accumulation during room temperature N+ irradiation of silicon
AI Titov, G Carter
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
481996
Phonons in hexagonal InN. Experiment and theory
VY Davydov, AA Klochikhin, MB Smirnov, VV Emtsev, VD Petrikov, ...
physica status solidi (b) 216 (1), 779-783, 1999
461999
Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions
AI Titov, SO Kucheyev, VS Belyakov, AY Azarov
Journal of Applied Physics 90 (8), 3867-3872, 2001
422001
Mechanism for the molecular effect in Si bombarded with clusters of light atoms
AI Titov, AY Azarov, LM Nikulina, SO Kucheyev
Physical Review B 73 (6), 064111, 2006
412006
Effect of the density of collision cascades on implantation damage in GaN
SO Kucheyev, JS Williams, AI Titov, G Li, C Jagadish
Applied Physics Letters 78 (18), 2694-2696, 2001
382001
Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory
AI Titov, VS Belyakov, AY Azarov
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2003
372003
Model for electrical isolation of GaN by light-ion bombardment
AI Titov, SO Kucheyev
Journal of applied physics 92 (10), 5740-5744, 2002
302002
Ion beam induced amorphous–crystalline phase transition in Si: Quantitative approach
AI Titov, SO Kucheyev
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000
292000
Damage accumulation in Si during N+ and N2+ bombardment along random and channeling directions
AI Titov, SO Kucheyev
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999
281999
The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors
NAG Ahmed, CE Christodoulides, G Carter, MJ Nobes, AI Titov
Nuclear Instruments and Methods 168 (1-3), 283-288, 1980
281980
Physical Foundations of Electron-and Ion-Beam Technology
IA Abroyan, AN Andronov, AI Titov
Vysshaya Shkola, Moscow, 1984
261984
Structural damage in ZnO bombarded by heavy ions
AY Azarov, AI Titov, PA Karaseov, SO Kucheyev, A Hallén, AY Kuznetsov, ...
Vacuum 84 (8), 1058-1061, 2010
252010
Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature
SO Kucheyev, JS Williams, J Zou, G Li, C Jagadish, AI Titov
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
252002
Damage buildup and the molecular effect in Si bombarded with PFn cluster ions
AI Titov, AY Azarov, LM Nikulina, SO Kucheyev
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007
242007
Molecular effect in semiconductors under heavy-ion bombardment: Quantitative approach based on the concept of nonlinear displacement spikes
AI Titov, VS Belyakov, SO Kucheyev
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
242002
Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN
MW Ullah, A Kuronen, K Nordlund, F Djurabekova, PA Karaseov, AI Titov
Journal of Applied Physics 112 (4), 2012
232012
Model for radiation damage buildup in GaN
AI Titov, PA Karaseov, AY Kataev, AY Azarov, SO Kucheyev
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012
232012
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