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R. Pinacho
R. Pinacho
dpto Electronica, Universidad de Valladolid
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Carbon in silicon: Modeling of diffusion and clustering mechanisms
R Pinacho, P Castrillo, M Jaraiz, I Martin-Bragado, J Barbolla, ...
Journal of Applied Physics 92 (3), 1582-1587, 2002
2122002
Experimental observation of conductance transients in metal-insulator-semiconductor structures
S Dueñas, R Peláez, E Castan, R Pinacho, L Quintanilla, J Barbolla, ...
Applied physics letters 71 (6), 826-828, 1997
571997
Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
I Martin-Bragado, P Castrillo, M Jaraiz, R Pinacho, JE Rubio, J Barbolla
Physical Review B 72 (3), 035202, 2005
432005
Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
R Pinacho, M Jaraiz, P Castrillo, I Martin-Bragado, JE Rubio, J Barbolla
Applied Physics Letters 86 (25), 2005
432005
Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation
P Castrillo, R Pinacho, M Jaraiz, JE Rubio
Journal of Applied Physics 109 (10), 2011
372011
Comprehensive model of damage accumulation in silicon
KRC Mok, F Benistant, M Jaraiz, JE Rubio, P Castrillo, R Pinacho, ...
Journal of Applied Physics 103 (1), 2008
342008
Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo
I Martin-Bragado, S Tian, M Johnson, P Castrillo, R Pinacho, J Rubio, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006
302006
Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena
I Martin-Bragado, M Jaraiz, P Castrillo, R Pinacho, J Barbolla, ...
Physical Review B 68 (19), 195204, 2003
282003
Sulfur hydrogen bonding in isolated monohydrates: Furfuryl mercaptan versus furfuryl alcohol
M Juanes, A Lesarri, R Pinacho, E Charro, JE Rubio, L Enríquez, M Jaraíz
Chemistry–A European Journal 24 (25), 6564-6571, 2018
262018
Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
KRC Mok, M Jaraiz, I Martin-Bragado, JE Rubio, P Castrillo, R Pinacho, ...
Journal of applied physics 98 (4), 2005
242005
Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators
I Martin-Bragado, P Castrillo, M Jaraiz, R Pinacho, JE Rubio, J Barbolla, ...
Journal of applied physics 98 (5), 2005
212005
Atomistic front-end process modelling: a powerful tool for deep-submicron device fabrication
M Jaraiz, P Castrillo, R Pinacho, I Martin-Bragado, J Barbolla
Simulation of Semiconductor Processes and Devices 2001: SISPAD 01, 10-17, 2001
182001
An Efficient Microkinetic Modeling Protocol: Start with Only the Dominant Mechanisms, Adjust All Parameters, and Build the Complete Model Incrementally
M Jaraiz, JE Rubio, L Enriquez, R Pinacho, JL Lopez-Perez, A Lesarri
ACS Catalysis 9 (6), 4804-4809, 2019
162019
Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation
JE Rubio, M Jaraiz, I Martin-Bragado, R Pinacho, P Castrillo, J Barbolla
Materials Science and Engineering: B 114, 151-155, 2004
162004
A DFT-based computational-experimental methodology for synthetic chemistry: Example of application to the catalytic opening of epoxides by titanocene
M Jaraiz, L Enriquez, R Pinacho, JE Rubio, A Lesarri, JL Lopez-Perez
The Journal of organic chemistry 82 (7), 3760-3766, 2017
152017
Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures
P Castrillo, M Jaraiz, R Pinacho, JE Rubio
Thin Solid Films 518 (9), 2448-2453, 2010
132010
Simulation of Semiconductor Processes and Devices 2001
M Jaraiz, P Castrillo, R Pinacho, I Martin-Bragado, J Barbolla, ...
Eds. D. Tsoukalas and C. Tsamis, Springer 710, 2001
132001
Physically based modeling of dislocation loops in ion implantation processing in silicon
P Castrillo, I Martin-Bragado, R Pinacho, M Jaraiz, JE Rubio, KRC Mok, ...
Materials Science and Engineering: B 124, 404-408, 2005
112005
Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features
I Martin-Bragado, M Jaraiz, P Castrillo, R Pinacho, JE Rubio, J Barbolla
Applied physics letters 84 (24), 4962-4964, 2004
102004
Comprehensive, physically based modelling of As in Si
R Pinacho, M Jaraiz, P Castrillo, JE Rubio, I Martin-Bragado, J Barbolla
Materials Science and Engineering: B 114, 135-140, 2004
92004
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