Nils Weimann
TítuloCitado porAño
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ...
Journal of applied physics 85 (6), 3222-3233, 1999
26501999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ...
Journal of applied physics 87 (1), 334-344, 2000
15382000
Scattering of electrons at threading dislocations in GaN
NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas
Journal of Applied Physics 83 (7), 3656-3659, 1998
7061998
The role of dislocation scattering in n-type GaN films
HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman
Applied physics letters 73 (6), 821-823, 1998
4621998
Undoped AlGaN/GaN HEMTs for microwave power amplification
LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ...
IEEE Transactions on Electron Devices 48 (3), 479-485, 2001
4262001
GaN nanotip pyramids formed by anisotropic etching
HM Ng, NG Weimann, A Chowdhury
Journal of applied physics 94 (1), 650-653, 2003
1862003
Second-harmonic generation in periodically poled GaN
A Chowdhury, HM Ng, M Bhardwaj, NG Weimann
Applied physics letters 83 (6), 1077-1079, 2003
1562003
Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group‐III Nitride Based Heterostructures and Devices
O Ambacher, R Dimitrov, M Stutzmann, BE Foutz, MJ Murphy, JA Smart, ...
physica status solidi (b) 216 (1), 381-389, 1999
1411999
AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
JA Smart, AT Schremer, NG Weimann, O Ambacher, LF Eastman, ...
Applied physics letters 75 (3), 388-390, 1999
1151999
Monlithically coupled waveguide and phototransistor
YK Chen, VE Houtsma, AB Leven, NG Weimann
US Patent 7,471,855, 2008
1082008
SiGe differential transimpedance amplifier with 50-GHz bandwidth
JS Weiner, A Leven, V Houtsma, Y Baeyens, YK Chen, P Paschke, ...
IEEE Journal of Solid-State Circuits 38 (9), 1512-1517, 2003
852003
High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy
MJ Manfra, NG Weimann, JWP Hsu, LN Pfeiffer, KW West, S Syed, ...
Journal of applied physics 92 (1), 338-345, 2002
772002
Compact InP-based HBT VCOs with a wide tuning range at W-and D-band
Y Baeyens, C Dorschky, N Weimann, Q Lee, R Kopf, G Georgiou, ...
IEEE Transactions on Microwave Theory and Techniques 48 (12), 2403-2408, 2000
722000
Patterning GaN microstructures by polarity-selective chemical etching
HM Ng, W Parz, NG Weimann, A Chowdhury
Japanese Journal of Applied Physics 42 (12A), L1405, 2003
622003
Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy
O Mitrofanov, M Manfra, N Weimann
Applied physics letters 82 (24), 4361-4363, 2003
582003
An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth
JS Weiner, JS Lee, A Leven, Y Baeyens, V Houtsma, G Georgiou, Y Yang, ...
IEEE journal of solid-state circuits 39 (10), 1720-1723, 2004
502004
Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates
NG Weimann, MJ Manfra, T Wachtler
IEEE Electron Device Letters 24 (2), 57-59, 2003
502003
High-reflectivity ultraviolet distributed Bragg reflectors
O Mitrofanov, S Schmult, MJ Manfra, T Siegrist, NG Weimann, AM Sergent, ...
Applied physics letters 88 (17), 171101, 2006
472006
Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates
MJ Manfra, NG Weimann, JWP Hsu, LN Pfeiffer, KW West, SNG Chu
Applied physics letters 81 (8), 1456-1458, 2002
452002
Smooth and vertical-sidewall InP etching using inductively coupled plasma
J Lin, A Leven, NG Weimann, Y Yang, RF Kopf, R Reyes, YK Chen, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
432004
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