JPR David
Título
Citado por
Citado por
Año
Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots
PW Fry, IE Itskevich, DJ Mowbray, MS Skolnick, JJ Finley, JA Barker, ...
Physical review letters 84 (4), 733, 2000
6242000
Improved performance of multilayer quantum-dot lasers using a high-growth-temperature spacer layer
HY Liu, IR Sellers, TJ Badcock, DJ Mowbray, MS Skolnick, KM Groom, ...
Applied Physics Letters 85 (5), 704-706, 2004
2882004
Avalanche multiplication noise characteristics in thin GaAs p/sup+/-in/sup+/diodes
KF Li, DS Ong, JPR David, GJ Rees, RC Tozer, PN Robson, R Grey
IEEE Transactions on Electron Devices 45 (10), 2102-2107, 1998
1451998
Design and performance of an InGaAs-InP single-photon avalanche diode detector
S Pellegrini, RE Warburton, LJJ Tan, JS Ng, AB Krysa, K Groom, ...
IEEE journal of quantum electronics 42 (4), 397-403, 2006
1322006
Room-temperature light emission from quantum dots with a thin GaAsSb cap layer
HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, F Suarez, ...
Journal of applied physics 99 (4), 046104, 2006
1122006
An enhanced color shift keying modulation scheme for high-speed wireless visible light communications
R Singh, T O’Farrell, JPR David
Journal of Lightwave Technology 32 (14), 2582-2592, 2014
1102014
Influences of the spacer layer growth temperature on multilayer quantum dot structures
HY Liu, IR Sellers, M Gutierrez, KM Groom, WM Soong, M Hopkinson, ...
Journal of applied physics 96 (4), 1988-1992, 2004
1002004
A Monte Carlo investigation of multiplication noise in thin p/sup+/-in/sup+/GaAs avalanche photodiodes
DS Ong, KF Li, GJ Rees, GM Dunn, JPR David, PN Robson
IEEE Transactions on Electron Devices 45 (8), 1804-1810, 1998
941998
Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P
MC DeLong, DJ Mowbray, RA Hogg, MS Skolnick, M Hopkinson, ...
Journal of applied physics 73 (10), 5163-5172, 1993
931993
Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111) B GaAs
AS Pabla, JL Sanchez‐Rojas, J Woodhead, R Grey, JPR David, GJ Rees, ...
Applied Physics Letters 63 (6), 752-754, 1993
831993
Nonlocal effects in thin 4H-SiC UV avalanche photodiodes
BK Ng, JPR David, RC Tozer, GJ Rees, F Yan, JH Zhao, M Weiner
IEEE Transactions on Electron Devices 50 (8), 1724-1732, 2003
792003
A simple model to determine multiplication and noise in avalanche photodiodes
DS Ong, KF Li, GJ Rees, JPR David, PN Robson
Journal of applied physics 83 (6), 3426-3428, 1998
791998
Impact ionization coefficients in 4H-SiC
WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ...
IEEE Transactions on electron devices 55 (8), 1984-1990, 2008
782008
Investigation of impact ionization in thin GaAs diodes
SA Plimmer, JPR David, DC Herbert, TW Lee, GJ Rees, PA Houston, ...
IEEE Transactions on Electron Devices 43 (7), 1066-1072, 1996
781996
Electronic band structure of AlGaInP grown by solid‐source molecular‐beam epitaxy
DJ Mowbray, OP Kowalski, M Hopkinson, MS Skolnick, JPR David
Applied physics letters 65 (2), 213-215, 1994
761994
All-optical switching effects in a passive GaAs/GaAlAs multiple-quantum-well waveguide resonator
PLK Wa, PN Robson, JPR David, G Hill, P Mistry, MA Pate, JS Roberts
Electronics Letters 22 (21), 1129-1130, 1986
721986
Excess avalanche noise in In0. 52Al0. 48As
YL Goh, ARJ Marshall, DJ Massey, JS Ng, CH Tan, M Hopkinson, ...
IEEE journal of quantum electronics 43 (5-6), 503-507, 2007
712007
Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
ARJ Marshall, CH Tan, MJ Steer, JPR David
Applied Physics Letters 93 (11), 111107, 2008
692008
Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ...
physica status solidi (b) 251 (6), 1276-1281, 2014
662014
Temperature dependence of impact ionization in submicrometer silicon devices
DJ Massey, JPR David, GJ Rees
IEEE Transactions on Electron Devices 53 (9), 2328-2334, 2006
662006
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20