Augusto Tazzoli
Augusto Tazzoli
Correu electrònic verificat a
Citada per
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Reliability of GaN high-electron-mobility transistors: State of the art and perspectives
G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008
A review on the physical mechanisms that limit the reliability of GaN-based LEDs
M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni
IEEE Transactions on Electron Devices 57 (1), 108-118, 2009
Reliability issues of gallium nitride high electron mobility transistors
G Meneghesso, M Meneghini, A Tazzoli, A Stocco, A Chini, E Zanoni
International Journal of Microwave and Wireless Technologies 2 (1), 39, 2010
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress
A Sozza, C Dua, E Morvan, S Delage, F Rampazzo, A Tazzoli, F Danesin, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005
A review of failure modes and mechanisms of GaN-based HEMTs
E Zanoni, G Meneghesso, G Verzellesi, F Danesin, M Meneghini, ...
2007 IEEE International Electron Devices Meeting, 381-384, 2007
Electrostatic discharge and cycling effects on ohmic and capacitive RF-MEMS switches
A Tazzoli, V Peretti, G Meneghesso
IEEE Transactions on Device and Materials Reliability 7 (3), 429-437, 2007
Ovenized high frequency oscillators based on aluminum nitride contour-mode MEMS resonators
A Tazzoli, M Rinaldi, G Piazza
2011 International Electron Devices Meeting, 20.2. 1-20.2. 4, 2011
ESD robustness of AlGaN/GaN HEMT devices
A Tazzoli, F Danesin, E Zanoni, G Meneghesso
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007
Reliability issues in RF-MEMS switches submitted to cycling and ESD test
A Tazzoli, V Peretti, R Gaddi, A Gnudi, E Zanoni, G Meneghesso
2006 IEEE International Reliability Physics Symposium Proceedings, 410-415, 2006
Soft and hard failures of InGaN-based LEDs submitted to electrostatic discharge testing
M Meneghini, A Tazzoli, R Butendeich, B Hahn, G Meneghesso, E Zanoni
IEEE Electron Device Letters 31 (6), 579-581, 2010
Experimental investigation of thermally induced nonlinearities in aluminum nitride contour-mode MEMS resonators
A Tazzoli, M Rinaldi, G Piazza
IEEE Electron Device Letters 33 (5), 724-726, 2012
Development of a new high holding voltage SCR-based ESD protection structure
G Meneghesso, A Tazzoli, FA Marino, M Cordoni, P Colombo
2008 IEEE International Reliability Physics Symposium, 3-8, 2008
Ultra-high-frequency temperature-compensated oscillators based on ovenized AlN contour-mode MEMS resonators
A Tazzoli, G Piazza, M Rinaldi
2012 IEEE International Frequency Control Symposium Proceedings, 1-5, 2012
Reliability enhancement by suitable actuation waveforms for capacitive RF MEMS switches in III–V technology
A Persano, A Tazzoli, A Cola, P Siciliano, G Meneghesso, F Quaranta
Journal of microelectromechanical systems 21 (2), 414-419, 2011
Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism
J Iannacci, A Repchankova, A Faes, A Tazzoli, G Meneghesso, ...
Microelectronics Reliability 50 (9-11), 1599-1603, 2010
An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches
J Iannacci, A Faes, A Repchankova, A Tazzoli, G Meneghesso
Microelectronics Reliability 51 (9-11), 1869-1873, 2011
Radiation sensitivity of ohmic RF-MEMS switches for spatial applications
A Tazzoli, G Cellere, E Autizi, V Peretti, A Paccagnella, G Meneghesso
2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems …, 2009
Active recovering mechanism for high performance RF MEMS redundancy switches
F Solazzi, A Tazzoli, P Farinelli, A Faes, V Mulloni, G Meneghesso, ...
The 40th European Microwave Conference, 93-96, 2010
Evolution of electrical parameters of dielectric-less ohmic RF-MEMS switches during continuous actuation stress
A Tazzoli, E Autizi, M Barbato, G Meneghesso, F Solazzi, P Farinelli, ...
2009 Proceedings of the European Solid State Device Research Conference, 343-346, 2009
Electrostatic discharge effects in ultrathin gate oxide MOSFETs
A Cester, S Gerardin, A Tazzoli, G Meneghesso
IEEE Transactions on Device and Materials Reliability 6 (1), 87-94, 2006
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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