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AKHIL AJAY
AKHIL AJAY
Postdoctoral researcher
Verified email at wsi.tum.de - Homepage
Title
Cited by
Cited by
Year
Nitride Semiconductor Light-emitting Diodes (LEDs): Materials, Technologies, and Applications
JJ Huang, HC Kuo, SC Shen
Woodhead Publishing, 2017
1102017
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ...
Applied Physics Letters 105 (13), 2014
792014
Ge doping of GaN beyond the Mott transition
A Ajay, J Schörmann, M Jiménez-Rodriguez, CB Lim, F Walther, ...
Journal of Physics D: Applied Physics 49 (44), 445301, 2016
502016
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band
CB Lim, A Ajay, C Bougerol, B Haas, J Schörmann, M Beeler, ...
Nanotechnology 26 (43), 435201, 2015
462015
Intersubband transitions in nonpolar GaN/Al (Ga) N heterostructures in the short-and mid-wavelength infrared regions
CB Lim, M Beeler, A Ajay, J Lähnemann, E Bellet-Amalric, C Bougerol, ...
Journal of Applied Physics 118 (1), 2015
412015
Near-infrared intersubband photodetection in GaN/AlN nanowires
J Lahnemann, A Ajay, MI Den Hertog, E Monroy
Nano letters 17 (11), 6954-6960, 2017
372017
Electrical and optical properties of heavily Ge-doped AlGaN
R Blasco, A Ajay, E Robin, C Bougerol, K Lorentz, LC Alves, I Mouton, ...
Journal of Physics D: Applied Physics 52 (12), 125101, 2019
362019
Effect of doping on the intersubband absorption in Si-and Ge-doped GaN/AlN heterostructures
A Ajay, CB Lim, DA Browne, J Polaczyński, E Bellet-Amalric, J Bleuse, ...
Nanotechnology 28 (40), 405204, 2017
312017
Intersubband absorption in Si‐and Ge‐doped GaN/AlN heterostructures in self‐assembled nanowire and 2D layers
A Ajay, CB Lim, DA Browne, J Polaczynski, E Bellet‐Amalric, ...
physica status solidi (b) 254 (8), 1600734, 2017
302017
Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures
CB Lim, A Ajay, C Bougerol, J Lähnemann, F Donatini, J Schörmann, ...
Nanotechnology 27 (14), 145201, 2016
282016
Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
I Dimkou, A Harikumar, F Donatini, J Lähnemann, MI Den Hertog, ...
Nanotechnology 31 (20), 204001, 2020
222020
Pin InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
S Valdueza-Felip, A Ajay, L Redaelli, MP Chauvat, P Ruterana, T Cremel, ...
Solar Energy Materials and Solar Cells 160, 355-360, 2017
222017
Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells
L Redaelli, A Mukhtarova, A Ajay, A Núñez-Cascajero, S Valdueza-Felip, ...
Japanese Journal of Applied Physics 54 (7), 072302, 2015
202015
Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors
M Spies, J Polaczyński, A Ajay, D Kalita, MA Luong, J Lähnemann, ...
Nanotechnology 29 (25), 255204, 2018
182018
Short-wavelength, mid-and far-infrared intersubband absorption in nonpolar GaN/Al (Ga) N heterostructures
CB Lim, M Beeler, A Ajay, J Lähnemann, E Bellet-Amalric, C Bougerol, ...
Japanese Journal of Applied Physics 55 (5S), 05FG05, 2016
182016
Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature
PM Mensz, B Dror, A Ajay, C Bougerol, E Monroy, M Orenstein, G Bahir
Journal of Applied Physics 125 (17), 2019
142019
Gallium kinetics on m-plane GaN
CB Lim, A Ajay, E Monroy
Applied Physics Letters 111 (2), 2017
142017
Effect of Al incorporation in nonpolar m‐plane GaN/AlGaN multi‐quantum‐wells using plasma‐assisted molecular‐beam epitaxy
CB Lim, A Ajay, C Bougerol, E Bellet‐Amalric, J Schörmann, M Beeler, ...
physica status solidi (a) 214 (9), 1600849, 2017
132017
Effect of Ge-doping on the short-wave, mid-and far-infrared intersubband transitions in GaN/AlGaN heterostructures
CB Lim, A Ajay, J Lähnemann, C Bougerol, E Monroy
Semiconductor Science and Technology 32 (12), 125002, 2017
112017
Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects
A Ajay, H Jeong, T Schreitmüller, M Döblinger, D Ruhstorfer, ...
Applied Physics Letters 121 (7), 2022
92022
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