| Nitride Semiconductor Light-emitting Diodes (LEDs): Materials, Technologies, and Applications JJ Huang, HC Kuo, SC Shen Woodhead Publishing, 2017 | 105 | 2017 |
| Effect of the quantum well thickness on the performance of InGaN photovoltaic cells L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ... Applied Physics Letters 105 (13), 2014 | 77 | 2014 |
| Ge doping of GaN beyond the Mott transition A Ajay, J Schörmann, M Jiménez-Rodriguez, CB Lim, F Walther, ... Journal of Physics D: Applied Physics 49 (44), 445301, 2016 | 46 | 2016 |
| Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band CB Lim, A Ajay, C Bougerol, B Haas, J Schörmann, M Beeler, ... Nanotechnology 26 (43), 435201, 2015 | 43 | 2015 |
| Intersubband transitions in nonpolar GaN/Al (Ga) N heterostructures in the short-and mid-wavelength infrared regions CB Lim, M Beeler, A Ajay, J Lähnemann, E Bellet-Amalric, C Bougerol, ... Journal of Applied Physics 118 (1), 2015 | 39 | 2015 |
| Electrical and optical properties of heavily Ge-doped AlGaN R Blasco, A Ajay, E Robin, C Bougerol, K Lorentz, LC Alves, I Mouton, ... Journal of Physics D: Applied Physics 52 (12), 125101, 2019 | 36 | 2019 |
| Near-infrared intersubband photodetection in GaN/AlN nanowires J Lahnemann, A Ajay, MI Den Hertog, E Monroy Nano letters 17 (11), 6954-6960, 2017 | 33 | 2017 |
| Effect of doping on the intersubband absorption in Si-and Ge-doped GaN/AlN heterostructures A Ajay, CB Lim, DA Browne, J Polaczyński, E Bellet-Amalric, J Bleuse, ... Nanotechnology 28 (40), 405204, 2017 | 29 | 2017 |
| Intersubband absorption in Si‐and Ge‐doped GaN/AlN heterostructures in self‐assembled nanowire and 2D layers A Ajay, CB Lim, DA Browne, J Polaczynski, E Bellet‐Amalric, ... physica status solidi (b) 254 (8), 1600734, 2017 | 28 | 2017 |
| Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures CB Lim, A Ajay, C Bougerol, J Lähnemann, F Donatini, J Schörmann, ... Nanotechnology 27 (14), 145201, 2016 | 26 | 2016 |
| Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources I Dimkou, A Harikumar, F Donatini, J Lähnemann, MI Den Hertog, ... Nanotechnology 31 (20), 204001, 2020 | 22 | 2020 |
| Pin InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm S Valdueza-Felip, A Ajay, L Redaelli, MP Chauvat, P Ruterana, T Cremel, ... Solar Energy Materials and Solar Cells 160, 355-360, 2017 | 20 | 2017 |
| Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells L Redaelli, A Mukhtarova, A Ajay, A Núñez-Cascajero, S Valdueza-Felip, ... Japanese Journal of Applied Physics 54 (7), 072302, 2015 | 19 | 2015 |
| Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors M Spies, J Polaczyński, A Ajay, D Kalita, MA Luong, J Lähnemann, ... Nanotechnology 29 (25), 255204, 2018 | 18 | 2018 |
| Short-wavelength, mid-and far-infrared intersubband absorption in nonpolar GaN/Al (Ga) N heterostructures CB Lim, M Beeler, A Ajay, J Lähnemann, E Bellet-Amalric, C Bougerol, ... Japanese Journal of Applied Physics 55 (5S), 05FG05, 2016 | 17 | 2016 |
| Gallium kinetics on m-plane GaN CB Lim, A Ajay, E Monroy Applied Physics Letters 111 (2), 2017 | 14 | 2017 |
| Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature PM Mensz, B Dror, A Ajay, C Bougerol, E Monroy, M Orenstein, G Bahir Journal of Applied Physics 125 (17), 2019 | 13 | 2019 |
| Effect of Al incorporation in nonpolar m‐plane GaN/AlGaN multi‐quantum‐wells using plasma‐assisted molecular‐beam epitaxy CB Lim, A Ajay, C Bougerol, E Bellet‐Amalric, J Schörmann, M Beeler, ... physica status solidi (a) 214 (9), 1600849, 2017 | 12 | 2017 |
| Effect of Ge-doping on the short-wave, mid-and far-infrared intersubband transitions in GaN/AlGaN heterostructures CB Lim, A Ajay, J Lähnemann, C Bougerol, E Monroy Semiconductor Science and Technology 32 (12), 125002, 2017 | 10 | 2017 |
| Solubility limit of Ge dopants in AlGaN: A chemical and microstructural investigation down to the nanoscale C Bougerol, E Robin, E Di Russo, E Bellet-Amalric, V Grenier, A Ajay, ... ACS Applied Materials & Interfaces 13 (3), 4165-4173, 2021 | 9 | 2021 |
Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, FranceDirección de correo verificada de cea.fr
