Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals W De Boer, D Timmerman, K Dohnalova, IN Yassievich, H Zhang, ...
Nature nanotechnology 5 (12), 878-884, 2010
371 2010 Space-separated quantum cutting with silicon nanocrystals for photovoltaic applications D Timmerman, I Izeddin, P Stallinga, IN Yassievich, T Gregorkiewicz
Nature Photonics 2 (2), 105-109, 2008
297 2008 Step-like enhancement of luminescence quantum yield of silicon nanocrystals D Timmerman, J Valenta, K Dohnalová, W De Boer, T Gregorkiewicz
Nature nanotechnology 6 (11), 710-713, 2011
236 2011 P. stallinga, IN Yassievich, and T. GregorNiewicz,“SpaceYseparated quantum cutting with silicon nanocrystals for photovoltaic applications,” D Timmerman, I Izeddin
Nature Photonics 2, 105-109, 2008
125 2008 Energy transfer in Er-doped sensitized with Si nanocrystals I Izeddin, D Timmerman, T Gregorkiewicz, AS Moskalenko, AA Prokofiev, ...
Physical Review B 78 (3), 035327, 2008
89 2008 Direct bandgap optical transitions in Si nanocrystals AA Prokofiev, AS Moskalenko, IN Yassievich, W De Boer, D Timmerman, ...
Jetp Letters 90, 758-762, 2010
82 2010 Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut S Ichikawa, K Shiomi, T Morikawa, D Timmerman, Y Sasaki, ...
Applied Physics Express 14 (3), 031008, 2021
54 2021 Saturation of luminescence from Si nanocrystals embedded in SiO2 D Timmerman, I Izeddin, T Gregorkiewicz
physica status solidi (a) 207 (1), 183-187, 2010
42 2010 Utilization of native oxygen in Eu (RE)-doped GaN for enabling device compatibility in optoelectronic applications B Mitchell, D Timmerman, J Poplawsky, W Zhu, D Lee, R Wakamatsu, ...
Scientific reports 6 (1), 18808, 2016
39 2016 Self-trapped exciton state in Si nanocrystals revealed by induced absorption WDAM de Boer, D Timmerman, T Gregorkiewicz, H Zhang, WJ Buma, ...
Physical Review B 85 (16), 161409, 2012
37 2012 Repairing nanoparticle surface defects E Marino, TE Kodger, RW Crisp, D Timmerman, KE MacArthur, M Heggen, ...
Angewandte Chemie 129 (44), 13983-13987, 2017
34 2017 Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption W De Boer, MT Trinh, D Timmerman, JM Schins, LDA Siebbeles, ...
Applied Physics Letters 99 (5), 2011
34 2011 M.; Gregorkiewicz, T. Step-like enhancement of luminescence quantum yield of silicon nanocrystals D Timmerman, J Valenta, K Dohnalova, WDA De Boer
Nat. Nanotechnol 6 (11), 710-713, 2011
34 2011 Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment W Zhu, B Mitchell, D Timmerman, A Uedono, A Koizumi, Y Fujiwara
APL Materials 4 (5), 2016
31 2016 Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy T Arai, D Timmerman, R Wakamatsu, D Lee, A Koizumi, Y Fujiwara
Journal of Luminescence 158, 70-74, 2015
28 2015 Carrier dynamics in Si nanocrystals in an SiO matrix investigated by transient light absorption W De Boer, E De Jong, D Timmerman, T Gregorkiewicz, H Zhang, ...
Physical Review B 88 (15), 155304, 2013
26 2013 Nat. Photonics 2, 105 (2008) D Timmerman, I Izeddin, P Stallinga, IN Yassievich, T Gregorkiewicz
26 2007 High-power Eu-doped GaN red LED based on a multilayer structure grown at lower temperatures by organometallic vapor phase epitaxy W Zhu, B Mitchell, D Timmerman, A Koizumi, T Gregorkiewicz, Y Fujiwara
MRS Advances 2 (3), 159-164, 2017
23 2017 Size dependence of quantum efficiency of red emission from GaN: Eu structures for application in micro-LEDs DD Van Der Gon, D Timmerman, Y Matsude, S Ichikawa, M Ashida, ...
Optics Letters 45 (14), 3973-3976, 2020
21 2020 GaN: Eu, O-based resonant-cavity light emitting diodes with conductive AlInN/GaN distributed Bragg reflectors T Inaba, J Tatebayashi, K Shiomi, D Timmerman, S Ichikawa, Y Fujiwara
ACS Applied Electronic Materials 2 (3), 732-738, 2020
21 2020