Immunity to device variations in a spiking neural network with memristive nanodevices D Querlioz, O Bichler, P Dollfus, C Gamrat
IEEE Transactions on Nanotechnology 12 (3), 288-295, 2013
202 2013 Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons F Mazzamuto, VH Nguyen, Y Apertet, C Caër, C Chassat, J Saint-Martin, ...
Physical Review B 83 (23), 235426, 2011
142 2011 Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder D Querlioz, Y Apertet, A Valentin, K Huet, A Bournel, S Galdin-Retailleau, ...
Applied Physics Letters 92 (4), 042108, 2008
128 2008 On the ballistic transport in nanometer-scaled DG MOSFETs JS Martin, A Bournel, P Dollfus
IEEE Transactions on Electron Devices 51 (7), 1148-1155, 2004
119 2004 The Wigner Monte Carlo method for nanoelectronic devices D Querlioz, P Dollfus
ISTE-Wiley: London, UK, 2010
99 2010 Computationally efficient physics-based compact CNTFET model for circuit design S Frégonèse, HC d'Honincthun, J Goguet, C Maneux, T Zimmer, ...
IEEE Transactions on Electron Devices 55 (6), 1317-1327, 2008
96 2008 Thermoelectric effects in graphene nanostructures P Dollfus, VH Nguyen, J Saint-Martin
Journal of Physics: Condensed Matter 27 (13), 133204, 2015
91 2015 P Dollfus
Journal of Applied Physics 82 (8), 3911-3916, 1997
88 1997 Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures V Nam Do, VH Nguyen, P Dollfus, A Bournel
Journal of Applied Physics 104 (6), 063708, 2008
86 2008 Gate-induced spin precession in an In0. 53Ga0. 47As two dimensional electron gas A Bournel, P Dollfus, P Bruno, P Hesto
The European Physical Journal Applied Physics 4 (1), 1-4, 1998
81 1998 A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ...
IEEE Transactions on electron devices 41 (9), 1646-1654, 1994
81 1994 On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ...
IEEE transactions on electron devices 54 (9), 2232-2242, 2007
78 2007 Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation P Dollfus, A Bournel, S Galdin, S Barraud, P Hesto
IEEE Transactions on Electron Devices 51 (5), 749-756, 2004
77 2004 Negative differential resistance in zigzag-edge graphene nanoribbon junctions V Nam Do, P Dollfus
Journal of Applied Physics 107 (6), 063705, 2010
74 2010 Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas J Saint-Martin, A Bournel, F Monsef, C Chassat, P Dollfus
Semiconductor science and technology 21 (4), L29, 2006
70 2006 Resonant tunnelling diodes based on graphene/h-BN heterostructure VH Nguyen, F Mazzamuto, A Bournel, P Dollfus
Journal of Physics D: Applied Physics 45 (32), 325104, 2012
69 2012 Controllable spin-dependent transport in armchair graphene nanoribbon structures VH Nguyen, V Nam Do, A Bournel, VL Nguyen, P Dollfus
Journal of Applied Physics 106 (5), 053710, 2009
66 2009 Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si (001) and Si1-xGex on Si1-zGez (001) S Galdin, P Dollfus, V Aubry-Fortuna, P Hesto, HJ Osten
Semiconductor science and technology 15 (6), 565, 2000
66 2000 Fabrication of a novel strained SiGe: C-channel planar 55 nm nMOSFET for high-performance CMOS T Ernst, JM Hartmann, V Loup, F Ducroquet, P Dollfus, G Guegan, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
59 2002 Electron effective mobility in strained-Si/Si1− xGex MOS devices using Monte Carlo simulation V Aubry-Fortuna, P Dollfus, S Galdin-Retailleau
Solid-state electronics 49 (8), 1320-1329, 2005
58 2005 