Philippe Dollfus
Philippe Dollfus
CNRS, Université Paris-Sud, Université Paris-Saclay
Dirección de correo verificada de u-psud.fr
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Año
Immunity to device variations in a spiking neural network with memristive nanodevices
D Querlioz, O Bichler, P Dollfus, C Gamrat
IEEE Transactions on Nanotechnology 12 (3), 288-295, 2013
2352013
Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons
F Mazzamuto, VH Nguyen, Y Apertet, C Caër, C Chassat, J Saint-Martin, ...
Physical Review B 83 (23), 235426, 2011
1532011
Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder
D Querlioz, Y Apertet, A Valentin, K Huet, A Bournel, S Galdin-Retailleau, ...
Applied Physics Letters 92 (4), 042108, 2008
1312008
On the ballistic transport in nanometer-scaled DG MOSFETs
JS Martin, A Bournel, P Dollfus
IEEE Transactions on Electron Devices 51 (7), 1148-1155, 2004
1282004
Thermoelectric effects in graphene nanostructures
P Dollfus, VH Nguyen, J Saint-Martin
Journal of Physics: Condensed Matter 27 (13), 133204, 2015
1092015
The Wigner Monte Carlo method for nanoelectronic devices
D Querlioz, P Dollfus
ISTE-Wiley: London, UK, 2010
1012010
Computationally efficient physics-based compact CNTFET model for circuit design
S Frégonèse, HC d'Honincthun, J Goguet, C Maneux, T Zimmer, ...
IEEE Transactions on Electron Devices 55 (6), 1317-1327, 2008
1002008
heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation
P Dollfus
Journal of Applied Physics 82 (8), 3911-3916, 1997
871997
Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures
V Nam Do, VH Nguyen, P Dollfus, A Bournel
Journal of Applied Physics 104 (6), 063708, 2008
852008
A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ...
IEEE Transactions on electron devices 41 (9), 1646-1654, 1994
831994
On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation
D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ...
IEEE transactions on electron devices 54 (9), 2232-2242, 2007
812007
Gate-induced spin precession in an In0. 53Ga0. 47As two dimensional electron gas
A Bournel, P Dollfus, P Bruno, P Hesto
The European Physical Journal Applied Physics 4 (1), 1-4, 1998
811998
Negative differential resistance in zigzag-edge graphene nanoribbon junctions
V Nam Do, P Dollfus
Journal of Applied Physics 107 (6), 063705, 2010
802010
Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation
P Dollfus, A Bournel, S Galdin, S Barraud, P Hesto
IEEE Transactions on Electron Devices 51 (5), 749-756, 2004
772004
Resonant tunnelling diodes based on graphene/h-BN heterostructure
VH Nguyen, F Mazzamuto, A Bournel, P Dollfus
Journal of Physics D: Applied Physics 45 (32), 325104, 2012
752012
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas
J Saint-Martin, A Bournel, F Monsef, C Chassat, P Dollfus
Semiconductor science and technology 21 (4), L29, 2006
732006
Controllable spin-dependent transport in armchair graphene nanoribbon structures
VH Nguyen, V Nam Do, A Bournel, VL Nguyen, P Dollfus
Journal of Applied Physics 106 (5), 053710, 2009
662009
Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si (001) and Si1-xGex on Si1-zGez (001)
S Galdin, P Dollfus, V Aubry-Fortuna, P Hesto, HJ Osten
Semiconductor science and technology 15 (6), 565, 2000
662000
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation
J Saint-Martin, A Bournel, P Dollfus
Solid-State Electronics 50 (1), 94-101, 2006
612006
Fabrication of a novel strained SiGe: C-channel planar 55 nm nMOSFET for high-performance CMOS
T Ernst, JM Hartmann, V Loup, F Ducroquet, P Dollfus, G Guegan, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
592002
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20