Vihar P. Georgiev
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Design and fabrication of memory devices based on nanoscale polyoxometalate clusters
C Busche, L Vilà-Nadal, J Yan, HN Miras, DL Long, VP Georgiev, ...
Nature 515 (7528), 545-549, 2014
2042014
Influence of low-symmetry distortions on electron transport through metal atom chains: when is a molecular wire really “broken”?
VP Georgiev, JE McGrady
Journal of the American Chemical Society 133 (32), 12590-12599, 2011
542011
Low-symmetry distortions in Extended Metal Atom Chains (EMACs): Origins and consequences for electron transport
VP Georgiev, PJ Mohan, D DeBrincat, JE McGrady
Coordination Chemistry Reviews 257 (1), 290-298, 2013
532013
Towards Polyoxometalate‐Cluster‐Based Nano‐Electronics
L Vilà‐Nadal, SG Mitchell, S Markov, C Busche, V Georgiev, A Asenov, ...
Chemistry-A European Journal 19, 16502, 2013
382013
Efficient spin filtering through cobalt-based extended metal atom chains
VP Georgiev, JE McGrady
Inorganic chemistry 49 (12), 5591-5597, 2010
362010
Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation Study
VP Georgiev, EA Towie, A Asenov
IEEE Transaction on Electron Devices 60 (3), 965, 2013
272013
Periodic trends in electron transport through extended metal atom chains: comparison of Ru 3 (dpa) 4 (NCS) 2 with its first-row analogues
PJ Mohan, VP Georgiev, JE McGrady
Chemical Science 3 (4), 1319-1329, 2012
252012
Nanowire transistor solutions for 5nm and beyond
A Asenov, Y Wang, B Cheng, X Wang, P Asenov, T Al-Ameri, VP Georgiev
2016 17th International Symposium on Quality Electronic Design (ISQED), 269-274, 2016
212016
Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors
Y Wang, T Al-Ameri, X Wang, VP Georgiev, E Towie, SM Amoroso, ...
Transaction of Electron Devices 62 (10), 3229 - 3236, 2015
192015
A survey of carbon nanotube interconnects for energy efficient integrated circuits
A Todri-Sanial, R Ramos, H Okuno, J Dijon, A Dhavamani, M Widlicenus, ...
IEEE Circuits and Systems Magazine 17 (2), 47-62, 2017
172017
Attenuation of conductance in cobalt extended metal atom chains
VP Georgiev, WMC Sameera, JE McGrady
The Journal of Physical Chemistry C 116 (38), 20163-20172, 2012
142012
NESS: New flexible nano-electronic simulation software
S Berrada, T Dutta, H Carrillo-Nunez, M Duan, F Adamu-Lema, J Lee, ...
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
112018
Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D Poisson Schrodinger simulation study
T Al-Ameri, VP Georgiev, FA Lema, T Sadi, X Wang, E Towie, C Riddet, ...
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
112016
Inverse Scaling Trends for Charge-Trapping-Induced Degradation of FinFETs Performance
SM Amoroso, VP Georgiev, L Gerrer, E Towie, X Wang, C Riddet, ...
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014
102014
Optimization and Evaluation of Variability in the Programming Window of a Flash Cell With Molecular Metal-Oxide Storage
VP Georgiev, S Markov, L Vila-Nadal, C Busche, L Cronin, A Asenov
IEEE Transaction of Electron Devices 61 (6), 2019-2026, 2014
102014
Experimental and simulation study of silicon nanowire transistors using heavily doped channels
VP Georgiev, MM Mirza, AI Dochioiu, F Adamu-Lema, SM Amoroso, ...
IEEE Transactions on Nanotechnology 16 (5), 727-735, 2017
92017
3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and Nanowire Transistors
C Sampedro, L Donetti, F Gámiz, A Godoy, FJ Garcia-Ruiz, VP Georgiev, ...
92014
Boron–nitrogen-and boron-substituted anthracenes and-phenanthrenes as models for doped carbon-based materials
M Velinova, V Georgiev, T Todorova, G Madjarova, A Ivanova, A Tadjer
Journal of Molecular Structure: THEOCHEM 955 (1-3), 97-108, 2010
92010
A physics-based investigation of pt-salt doped carbon nanotubes for local interconnects
J Liang, R Ramos, J Dijon, H Okuno, D Kalita, D Renaud, J Lee, ...
2017 IEEE International Electron Devices Meeting (IEDM), 35.5. 1-35.5. 4, 2017
82017
Simulation study of vertically stacked lateral Si nanowires transistors for 5-nm CMOS applications
T Al-Ameri, VP Georgiev, F Adamu-Lema, A Asenov
IEEE Journal of the Electron Devices Society 5 (6), 466-472, 2017
82017
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
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